Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Tung-Tsun Chen"'
Autor:
Martin Christopher Holland, Z. Q. Wu, Aryan Afzalian, E. Chen, T. Vasen, Blandine Duriez, M.J.H. van Dal, Gerben Doornbos, Tzer-Min Shen, Carlos H. Diaz, Tung-Tsun Chen, Georgios Vellianitis, S.-K Su
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM).
We present (i) a novel, thermally stable Atomic Layer Deposition (ALD) high-k dielectric stack that, for the first time, has the potential to meet all gate stack requirements for both n- and p-channel Ge FETs, (ii) record low contact resistivity for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa56e363843dda21233d0d0ce7ed4d3c
https://doi.org/10.1109/iedm.2018.8614577
https://doi.org/10.1109/iedm.2018.8614577
Autor:
Mei Yan, Tran Chien Dang, Jui-Cheng Huang, Cheng-Hsiang Hsieh, Yu Jiang, Tung-Tsun Chen, Xu Liu, Hao Yu
Publikováno v:
2016 IEEE Symposium on VLSI Technology.
Internet-of-things (IoTs) need a common CMOS technology platform to build multi-modal sensor on chip. This paper shows a CMOS-based ion-sensitive field effect transistor (ISFET) pH sensor for food safety screening. A low-power high-gain subthreshold
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ad8536e16c54f50bf19023aa1112f02
https://doi.org/10.1109/vlsit.2016.7573440
https://doi.org/10.1109/vlsit.2016.7573440
Autor:
Ravi Droopad, Peter Ramvall, J.-R. Ramirez, M. Holland, L.-E. Wernersson, Kimberly A. Dick, Georgios Vellianitis, M. Passlack, G. Doornbos, Richard Kenneth Oxland, S. Wang, Yee-Chia Yeo, Claes Thelander, M.J.H. van Dal, Aryan Afzalian, Blandine Duriez, T. Vasen, Lars Samuelson, Tung-Tsun Chen
Publikováno v:
2016 IEEE Symposium on VLSI Technology.
InAs nanowires (NW) grown by MOCVD with diameter d as small as 10 nm and gate-all-around (GAA) MOSFETs with d = 12–15 nm are demonstrated. I on = 314 µA/µm, and S sat =68 mV/dec was achieved at V dd = 0.5 V (I off = 0.1 µA/µm). Highest g m meas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ee5b60e57625fd1e9901724a8c90d88
https://doi.org/10.1109/vlsit.2016.7573417
https://doi.org/10.1109/vlsit.2016.7573417
Autor:
L.-S. Jeng, Yi-Shao Liu, Ming-Jer Chen, Yang Jing-Hwang, C. K. Yang, Tsui Felix Ying-Kit, Yi-Chun Huang, Tung-Tsun Chen, Jui-Cheng Huang, Chin-Hua Wen, C. H. Hsieh, C.-C. Lin, Sheng-Da Liu
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
A dual-gate ion-sensitive field-effect transistor (DGFET) with the back-side sensing structure implemented in a 0.18 μm SOI-CMOS SoC platform realizing high performance bioelectrical detection with non-ideal effect reduction is presented. Non-ideal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d74a1c3577c92fce4e22962e46fbc797
https://doi.org/10.1109/iedm.2015.7409792
https://doi.org/10.1109/iedm.2015.7409792
Autor:
Jui-Cheng Huang, Xu Liu, Jing Guo, Cheng-Hsiang Hsieh, Yu Jiang, Tung-Tsun Chen, Mei Yan, Hao Yu, Xiwei Huang
Publikováno v:
CICC
This paper presents a high-gain and large-scale CMOS ion-sensitive field effect transistor (ISFET) sensor. The high-gain readout is achieved by a novel pH-to-Time-to-Voltage conversion (pH-TVC), which can greatly increase pixel density (small pixel s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82d6b42be5db72aba29169a719f772f4
https://doi.org/10.1109/cicc.2015.7338427
https://doi.org/10.1109/cicc.2015.7338427
Autor:
Cheng-Syun Li, Jui-Cheng Huang, Tung-Tsun Chen, Chia-Hua Chu, Yung-Chow Peng, Chun-Wen Cheng, Sheng-Shian Li, Chung-Hsien Lin
Publikováno v:
2013 IEEE 26th International Conference on Micro Electro Mechanical Systems (MEMS).
This paper reports on the design and characterization of a low phase noise MEMS oscillator with ultra-low polarization voltage. An innovative oscillation circuitry is also proposed by a high gain-bandwidth, low-power TIVA (trans-impedance voltage amp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72ab9b78ee15c8998fdd86a18337fee2
https://doi.org/10.1109/memsys.2013.6474349
https://doi.org/10.1109/memsys.2013.6474349