Zobrazeno 1 - 10
of 104
pro vyhledávání: '"Tung-Sheng Kuan"'
Autor:
Yu Xiang, Jiyoon Jessica Kim, Yanli Zhang, Timothy Yoo, Yaobiao Xia, Tung-Sheng Kuan, Gwo-Ching Wang
Publikováno v:
Thin Solid Films. 681:32-40
We present the magnetic properties of three-bilayer superlattices [Co(0.8 nm)/Cu(1.1 nm)]3 and Co(0.8 nm)/Al(2.2 nm)]3 grown by magnetron sputter deposition on SiO2 substrates. Using the surface magneto-optical Kerr effect we observed longitudinal ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42347b4dda3fa82d7ceeb3427895c95e
https://doi.org/10.1016/j.tsf.2019.04.048
https://doi.org/10.1016/j.tsf.2019.04.048
Autor:
Robert P. Devaty, Tung-Sheng Kuan, Randall M. Feenstra, Y. Ke, Shu Nie, C. K. Inoki, Gong Gu, Wolfgang J. Choyke, C. D. Lee
The formation of step bunches and/or facets on hydrogen-etched 6H-SiC(0 0 0 1) and ( 0 0 0 1 ¯ ) surfaces has been studied, using both nominally on-axis and intentionally miscut (i.e. vicinal) substrates. It is found that small miscuts on the (0 0 0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::82aac13649507e8301f23a3308a87802
Publikováno v:
Nanotechnology. 31:035001
It is well-known that the electrical conductivity of a metallic film reduces dramatically when the film becomes very thin. This effect is mainly attributed to surface scattering of the conducting carriers. In a multilayer structure, interface scatter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5826f2c155f8871bfcb7231e4c2c23a1
https://doi.org/10.1088/1361-6528/ab453f
https://doi.org/10.1088/1361-6528/ab453f
Publikováno v:
Journal of Crystal Growth. 315:96-101
The effects of antimony incorporation and a convex compositional step-gradient on the surface morphology, defect generation, and defect propagation properties of InAs y P 1− y metamorphic buffer layers (MBLs) were investigated. The incorporation of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa357adbf3ccb0618cb5524c7d613b31
https://doi.org/10.1016/j.jcrysgro.2010.09.054
https://doi.org/10.1016/j.jcrysgro.2010.09.054
Autor:
Monika K. Wiedmann, Smita Jha, Xueyan Song, Tung-Sheng Kuan, Susan E. Babcock, Thomas F. Kuech
Publikováno v:
Journal of Crystal Growth. 315:91-95
Defect reduction in heteroepitaxial growth of GaSb and InAs was achieved using nano-patterned GaAs substrates generated by block copolymer lithography (BCL). The lattice-mismatched growth of both GaSb and InAs on nano-patterned GaAs templates exhibit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2d8a548428f9c4d50104978d193ead4
https://doi.org/10.1016/j.jcrysgro.2010.07.050
https://doi.org/10.1016/j.jcrysgro.2010.07.050
Autor:
J. H. Park, Jerry R. Meyer, Xueyan Song, Jeremy Kirch, Sangho Kim, Igor Vurgaftman, Susan E. Babcock, J.C. Shin, Tung-Sheng Kuan, Thomas F. Kuech, T. Garrod, Luke J. Mawst
Publikováno v:
Journal of Crystal Growth. 312:1165-1169
The defect-trapping effectiveness of an InAsP metamorphic buffer layer (MBL) design was investigated by studying the light-emission characteristics of InAs quantum wells grown on the MBL, along with structural characterization through SIMS and TEM me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c638a361068ee1a28f49f7b8e0bee7ed
https://doi.org/10.1016/j.jcrysgro.2009.12.057
https://doi.org/10.1016/j.jcrysgro.2009.12.057
Autor:
Ashutosh Sagar, C. K. Inoki, Tung-Sheng Kuan, Hadis Morkoç, Feng Yun, Y. Fu, Randall M. Feenstra, Yong-Tae Moon
Publikováno v:
physica status solidi (a). 202:722-726
The influence of a thin porous SiNx interlayer on the growth of GaN by metalorganic chemical vapor deposition (MOCVD) has been studied. The interlayer is deposited on a GaN template by introducing silane in the presence of ammonia into the MOCVD cham
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::970a5ac9b63d6746cd9b84e195de5d3b
https://doi.org/10.1002/pssa.200461486
https://doi.org/10.1002/pssa.200461486
Autor:
Feng Yun, Y. Fu, Seydi Doğan, Hadis Morkoç, J. Q. Xie, Ümit Özgür, Lin Zhou, David J. Smith, C. K. Inoki, Yong-Tae Moon, Tung-Sheng Kuan
Publikováno v:
physica status solidi (a). 202:749-753
nitridation of thin Ti layers (20 nm and 10nm) on a GaN template. TEM analyses performed for the GaN layer with 20 nm TiN porous netowrk indicate the effectiveness of TiN porous structure in blocking the threading dislocation from penetrating into th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58c2da99975aeecb676cb56d478f7dbd
https://doi.org/10.1002/pssa.200461552
https://doi.org/10.1002/pssa.200461552
Autor:
Xuefeng Hua, P. Jiang, N. Coghe, Christian Stolz, Tung-Sheng Kuan, Gottlieb S. Oehrlein, P. Lazzeri, M. Anderle, C. K. Inoki
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 23:151-164
We have investigated plasma surface interactions of nanoporous silica (NPS) films with porosities up to 50%, and SiO2 with C4F8∕Ar discharges used for plasma etching. The pore size was about 2–3nm for all films. In highly polymerizing plasmas (e.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c186f10df74fc8b5ba0793b73f9a64f8
https://doi.org/10.1116/1.1821584
https://doi.org/10.1116/1.1821584
Autor:
Tung-Sheng Kuan, Ilesanmi Adesida, C. D. Lee, Paul W. Bohn, Randall M. Feenstra, Ashutosh Sagar, C. K. Inoki, Daniel D. Koleske, Diego J. Dı́az
Publikováno v:
Journal of Electronic Materials. 32:855-860
We have studied the growth of GaN on porous SiC and GaN substrates, employing both plasma-assisted molecular-beam epitaxy (PAMBE) and metal-organic chemical-vapor deposition (MOCVD). For growth on porous SiC, transmission electron microscopy (TEM) ob
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::803766f3b3469514e7e71faf4f8ea666
https://doi.org/10.1007/s11664-003-0200-5
https://doi.org/10.1007/s11664-003-0200-5