Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Tung Yuan Yu"'
Autor:
Loganathan Ravi, Muzafar Ahmad Rather, Kun-Lin Lin, Chien-Ting Wu, Tung-Yuan Yu, Kun-Yu Lai, Jen-Inn Chyi
Publikováno v:
ACS Applied Electronic Materials. 5:146-154
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::941c17c47ca35aa133bf578a46dc5ab5
https://doi.org/10.1021/acsaelm.2c01078
https://doi.org/10.1021/acsaelm.2c01078
Publikováno v:
Surface and Interface Analysis. 54:864-872
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1509b39a1bc3ddf772c59e3d0f3ee2b7
https://doi.org/10.1002/sia.7099
https://doi.org/10.1002/sia.7099
Publikováno v:
Crystals, Vol 9, Iss 6, p 291 (2019)
Hexagonal pyramid-like InN nanocolumns were grown on Si(111) substrates via radio-frequency (RF) metal−organic molecular beam epitaxy (MOMBE) together with a substrate nitridation process. The metal−organic precursor served as a group-III source
Externí odkaz:
https://doaj.org/article/6108277feaa94ab0af364330e1543569
Autor:
Tuo-Hung Hou, Yann Wen Lan, Yun Yan Lin, Kai Shin Li, Yuan Liang Zhong, Chun Jung Su, Ming-Yang Li, Chuan Jie Hong, Chih Pin Lin, Lain-Jong Li, Chih Hao Yang, Po Chun Chen, Tung Yuan Yu
Publikováno v:
Nano Research. 12:303-308
Two-dimensional semiconductors, such as MoS2 are known to be highly susceptible to diverse molecular adsorbates on the surface during fabrication, which could adversely affect device performance. To ensure high device yield, uniformity and performanc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c01af2a325806572d5b9fbef61e462e4
https://doi.org/10.1007/s12274-018-2215-5
https://doi.org/10.1007/s12274-018-2215-5
Publikováno v:
Journal of Applied Physics; 2016, Vol. 120 Issue 23, p234501-1-234501-8, 8p, 4 Diagrams, 1 Chart, 5 Graphs
Autor:
Fu-Ju Hou, H.-C. Chang, Yi-Wen Lin, Yung-Chun Wu, Tung-Yuan Yu, Chong-Jhe Sun, Yu-Hsien Huang
Publikováno v:
Applied Physics Letters. 117:262109
This paper reports a self-induced ferroelectric 2-nm-thick Ge-doped HfO2 (Ge:HfO2) thin film. Ge thermal desorption, incorporation into HfO2, and further Ge:HfO2 crystallization were all performed through rapid thermal annealing simultaneously. The f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7684541dd1b47915a4699a44ca376e4
https://doi.org/10.1063/5.0029628
https://doi.org/10.1063/5.0029628
Publikováno v:
Coatings, Vol 11, Iss 2, p 2 (2021)
Ultra-thin Si3N4 films were grown on Si(111) surface by radio frequency (RF)-N2 plasma exposure at 900 °C with 1–1.2 sccm of a flux of atomic nitrogen. We discuss the effect of various conditions such as N2 flow rate, nitriding time and RF power o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d0129051f498a066b8121259ff75ebe1
https://doi.org/10.3390/coatings11010002
https://doi.org/10.3390/coatings11010002
Autor:
Tung Yuan Yu, Te Ming Chen, Jia Feng Wang, Cheng Lu Lin, Tsung Han Chen, Tien Hu, J.N. Chen, Cheng Yi Chang, Fu-Ming Pan
Publikováno v:
Current Applied Physics. 14:659-664
To study the influence of defects in the hole blocking layer (HBL) on the dark current of amorphous selenium (a-Se) based photosensors, we prepared ZnO thin films by reactive sputter deposition (RSD) for the use as the HBL of the photosensors. The Zn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6ed7e17b4c00e0d85bfb5333cb03c3e
https://doi.org/10.1016/j.cap.2014.02.011
https://doi.org/10.1016/j.cap.2014.02.011
Publikováno v:
Japanese Journal of Applied Physics. 57:075501
The grain growth orientation and electrical properties of Ge films on Si substrates deposited by chemical vapor deposition (CVD) after laser annealing with various laser powers were examined using X-ray diffraction (XRD), electron backscatter diffrac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::072e2b160cbef0d5c258b52f291d595c
https://doi.org/10.7567/jjap.57.075501
https://doi.org/10.7567/jjap.57.075501
Publikováno v:
Journal of Applied Physics. 120:234501
We fabricated amorphous selenium (a-Se) photodetectors with a lateral metal-insulator-semiconductor-insulator-metal (MISIM) device structure. Thermal aluminum oxide, plasma-enhanced chemical vapor deposited silicon nitride, and thermal atomic layer d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9198cb238415975ea3838b76f1e55a8
https://doi.org/10.1063/1.4972029
https://doi.org/10.1063/1.4972029