Zobrazeno 1 - 10
of 75
pro vyhledávání: '"Tung Ying Hsieh"'
Autor:
Po-Han Chen, Chun-An Chen, Yu-Ting Lin, Ping-Yi Hsieh, Meng-Hsi Chuang, Xiaoze Liu, Tung-Ying Hsieh, Chang-Hong Shen, Jia-Min Shieh, Meng-Chyi Wu, Yung-Fu Chen, Chih-Chao Yang, Yi-Hsien Lee
Publikováno v:
ACS Applied Materials & Interfaces. 15:10812-10819
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30b184cd8828ea92646e28f89a8cc2af
https://doi.org/10.1021/acsami.2c19705
https://doi.org/10.1021/acsami.2c19705
Autor:
Tsung-Ta Wu, Wen-Hsien Huang, Chih-Chao Yang, Hung-Chun Chen, Tung-Ying Hsieh, Wei-Sheng Lin, Ming-Hsuan Kao, Chiu-Hao Chen, Jie-Yi Yao, Yi-Ling Jian, Chiung-Chih Hsu, Kun-Lin Lin, Chang-Hong Shen, Yu-Lun Chueh, Jia-Min Shieh
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-11 (2017)
Abstract Development of manufacture trend for TFTs technologies has focused on improving electrical properties of films with the cost reduction to achieve commercialization. To achieve this goal, high-performance sub-50 nm TFTs-based MOSFETs with ON-
Externí odkaz:
https://doaj.org/article/dfca7c0d50a149839d75f7508a8ac08d
Autor:
Tung-Ying Hsieh, Ping-Yi Hsieh, Chih-Chao Yang, Chang-Hong Shen, Jia-Min Shieh, Wen-Kuan Yeh, Meng-Chyi Wu
Publikováno v:
Micromachines, Vol 11, Iss 8, p 741 (2020)
We introduce a single-grain gate-all-around (GAA) Si nanowire (NW) FET using the location-controlled-grain technique and several innovative low-thermal budget processes, including green nanosecond laser crystallization, far-infrared laser annealing,
Externí odkaz:
https://doaj.org/article/22a985f4cf5044729dee059c539d9738
Publikováno v:
Annals of Plastic Surgery
Supplemental digital content is available in the text.
Background Abdominoplasty has been evolving since the 1960s with many technical innovations throughout the years. It has become one of the most frequent and common procedures done in aesthet
Background Abdominoplasty has been evolving since the 1960s with many technical innovations throughout the years. It has become one of the most frequent and common procedures done in aesthet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::281fcd8ffc40f38d4a425efc07468dcf
https://doi.org/10.1097/sap.0000000000002639
https://doi.org/10.1097/sap.0000000000002639
Publikováno v:
Annals of Plastic Surgery. 86:S259-S264
The authors collectively reviewed their experiences in performing rhinoplasty in North America, Asia, and South America and categorized common undesirable features in Eastern and Western rhinoplasty and their respective surgical algorithms. In Wester
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2a5995072f5ed5cd35ff79c11ed42ec
https://doi.org/10.1097/sap.0000000000002617
https://doi.org/10.1097/sap.0000000000002617
Autor:
Ping Yi Hsieh, Wen-Kuan Yeh, Meng-Chyi Wu, Chih-Chao Yang, Tung Ying Hsieh, Chang Hong Shen, Jia Min Shieh
Publikováno v:
Micromachines
Volume 11
Issue 8
Micromachines, Vol 11, Iss 741, p 741 (2020)
Volume 11
Issue 8
Micromachines, Vol 11, Iss 741, p 741 (2020)
We introduce a single-grain gate-all-around (GAA) Si nanowire (NW) FET using the location-controlled-grain technique and several innovative low-thermal budget processes, including green nanosecond laser crystallization, far-infrared laser annealing,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::440d51cd102af65a9b668b9b8593a0f0
http://europepmc.org/articles/PMC7464086
http://europepmc.org/articles/PMC7464086
Autor:
Po-Han Chen, Tung-Ying Hsieh, Wen-Kuan Yeh, Ping-Yi Hsieh, Yi-Hsien Lee, Chih-Chao Yang, Meng-Chyi Wu, Jia-Min Shieh, Chang-Hong Shen, Da-Chiang Chang, Po-Tsang Huang, Yu-Ting Lin
Publikováno v:
2020 IEEE Symposium on VLSI Technology.
A large-area and scalable monolayer TMD is feasible to employ in monolithic 3D image sensor scheme. For the first time, we represents a prototype $\mathrm{MoS}_{2}$ phototransistor array with ultrahigh responsivity $(> 10^{3}\ \mathrm{A}/\mathrm{W})$
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3dbe14b6e564645f7b0b96b7368ef761
https://doi.org/10.1109/vlsitechnology18217.2020.9265017
https://doi.org/10.1109/vlsitechnology18217.2020.9265017
Autor:
Shih-Wei Chen, Po-Tsang Huang, Wen-Kuan Yeh, Chenming Hu, Chih-Chao Yang, Chia-He Chang, Kuan-Neng Chen, Jia-Min Shieh, Meng-Chyi Wu, Wan-Chi Wu, Chang-Hong Shen, Tung-Ying Hsieh
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM).
A location-controlled-grain technique is presented for fabricating BEOL monolithic 3D FinFET ICs over SiO 2 . The grain-boundary free Si FinFETs thus fabricated exhibit steep sub-threshold swing ( $385\ \mu \mathrm{A}/\mu \mathrm{m}$ ), and high I on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54f6a91405cf604953163069e0408584
https://doi.org/10.1109/iedm.2018.8614708
https://doi.org/10.1109/iedm.2018.8614708
Autor:
Wen-Kuan Yeh, Meng-Chyi Wu, Jia-Min Shieh, Chang-Hong Shen, Chih-Chao Yang, Wen-Hsien Huang, Jung-Hau Shiu, Tung Ying Hsieh, Hsing-Hsiang Wang, Yu-Hsiu Chen, Tsung-Ta Wu
Publikováno v:
IEEE Electron Device Letters. 37:533-536
Three-dimensional sequentially stackable high- $k$ /metal-gate-stacked tri-gate nanowire poly-Si FETs with embedded source/drain (e-S/D) and back gate were demonstrated. The highly crystallized channel, fabricated by green nanosecond laser crystalliz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aef9c44ebe630d7c82d1c2107473ad88
https://doi.org/10.1109/led.2016.2537381
https://doi.org/10.1109/led.2016.2537381
Autor:
Yu-Hao Huang, Kao-Ping Chang, Chih-Hau Chang, Ko-Kang Chen, Sin-Daw Lin, Feng-Shu Chang, Shu-Hung Huang, Chung-Sheng Lai, Tung-Ying Hsieh
Publikováno v:
Annals of Plastic Surgery. 76:420-423
BACKGROUND Intimal dissection can cause an irregular internal surface with intimal flaps and subendothelial collagen exposure. This has been associated with a high risk of thrombosis. Trimming the artery to a healthy level is routinely recommended to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a76e410940f9b362bcaf1df83095610a
https://doi.org/10.1097/sap.0000000000000384
https://doi.org/10.1097/sap.0000000000000384