Zobrazeno 1 - 10
of 132
pro vyhledávání: '"Tung Yin"'
Autor:
Yu-Sen Jiang, Kuei-Wen Huang, Sheng-Han Yi, Chin-I Wang, Teng-Jan Chang, Wei-Chung Kao, Chun-Yuan Wang, Yu-Tung Yin, Jay Shieh, Miin-Jang Chen
Publikováno v:
Journal of the European Ceramic Society. 42:6997-7003
Autor:
Chun-Yuan Wang, Chin-I Wang, Sheng-Han Yi, Teng-Jan Chang, Chun-Yi Chou, Yu-Tung Yin, Makoto Shiojiri, Miin-Jang Chen
Publikováno v:
Materials & Design, Vol 195, Iss , Pp 109020- (2020)
Based on the engineering of the TiN capping layer, the tailoring of the crystalline phases and the paraelectric(PE)/antiferroelectric(AFE)/ferroelectric(FE) properties of nanoscale ZrO2 thin films are demonstrated without any post-annealing treatment
Externí odkaz:
https://doaj.org/article/a90ae222d9c743a0a47c750d29acf5cf
Publikováno v:
Journal of the European Ceramic Society. 42:4221-4226
Autor:
Tung Yin1
Publikováno v:
Lewis & Clark Law Review. 2021, Vol. 25 Issue 2, p397-404. 8p.
Publikováno v:
Materials Chemistry and Physics. 304:127895
Autor:
Tung Yin1
Publikováno v:
Kansas Law Review. 2020, Vol. 69 Issue 3, p447-492. 46p.
Autor:
Tung Yin1
Publikováno v:
South Carolina Law Review. Winter2019, Vol. 71 Issue 2, p523-602. 80p.
Autor:
Lain-Jong Li, Yu Tung Yin, Chih Piao Chuu, Jing-Jong Shyue, Cheng Hung Hou, Wei Hao Lee, Miin-Jang Chen, Chun Yi Chou, Tse An Chen, Ting Yun Wang
Publikováno v:
Chemistry of Materials. 33:5584-5590
Autor:
Chun-Yuan Wang, Chun-Yi Chou, Yu-Tung Yin, Hsin-Chih Lin, Miin-Jang Chen, Teng-Jan Chang, Sheng-Han Yi, Chin-I Wang
Publikováno v:
ACS Applied Electronic Materials. 3:1937-1946
Tailoring of crystalline phases and dielectric properties of ZrO2 thin films are demonstrated by capping a nanoscale TiN layer prepared by plasma-enhanced atomic layer deposition. The in-plane tens...
Autor:
Teng-Jan Chang, Yu-En Jeng, Yu-Sen Jiang, Chin-I Wang, Yu-Ting Chao, Kuei-Wen Huang, Miin-Jang Chen, Yu-Tung Yin, Chao-Hsin Wu
Publikováno v:
Journal of Materials Chemistry C. 9:1401-1409
The ferroelectric (FE) negative capacitance (NC) has emerged as a potential candidate for low-power electronics. In this study, we experimentally demonstrate the capacitance magnification of a paraelectric (PE) HfO2 capacitance (CHfO2) connected in s