Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Tung‐Yuan Yu"'
Publikováno v:
Crystals, Vol 9, Iss 6, p 291 (2019)
Hexagonal pyramid-like InN nanocolumns were grown on Si(111) substrates via radio-frequency (RF) metal−organic molecular beam epitaxy (MOMBE) together with a substrate nitridation process. The metal−organic precursor served as a group-III source
Externí odkaz:
https://doaj.org/article/6108277feaa94ab0af364330e1543569
Autor:
Tung-yuan Yu, 余東原
97
In this study, sputtered Cu film thermal properties on Si substrate have been improved using an amorphous oxide (HoScOx) as the diffusion barrier layer. For this HoScOx (x=3~4) film only (hereafter called the HoScOx layer), it still possesses
In this study, sputtered Cu film thermal properties on Si substrate have been improved using an amorphous oxide (HoScOx) as the diffusion barrier layer. For this HoScOx (x=3~4) film only (hereafter called the HoScOx layer), it still possesses
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/62970360809717924958
Autor:
Loganathan Ravi, Muzafar Ahmad Rather, Kun-Lin Lin, Chien-Ting Wu, Tung-Yuan Yu, Kun-Yu Lai, Jen-Inn Chyi
Publikováno v:
ACS Applied Electronic Materials. 5:146-154
Publikováno v:
Surface and Interface Analysis. 54:864-872
Autor:
Tuo-Hung Hou, Yann Wen Lan, Yun Yan Lin, Kai Shin Li, Yuan Liang Zhong, Chun Jung Su, Ming-Yang Li, Chuan Jie Hong, Chih Pin Lin, Lain-Jong Li, Chih Hao Yang, Po Chun Chen, Tung Yuan Yu
Publikováno v:
Nano Research. 12:303-308
Two-dimensional semiconductors, such as MoS2 are known to be highly susceptible to diverse molecular adsorbates on the surface during fabrication, which could adversely affect device performance. To ensure high device yield, uniformity and performanc
Publikováno v:
Journal of Applied Physics; 2016, Vol. 120 Issue 23, p234501-1-234501-8, 8p, 4 Diagrams, 1 Chart, 5 Graphs
Autor:
Fu-Ju Hou, H.-C. Chang, Yi-Wen Lin, Yung-Chun Wu, Tung-Yuan Yu, Chong-Jhe Sun, Yu-Hsien Huang
Publikováno v:
Applied Physics Letters. 117:262109
This paper reports a self-induced ferroelectric 2-nm-thick Ge-doped HfO2 (Ge:HfO2) thin film. Ge thermal desorption, incorporation into HfO2, and further Ge:HfO2 crystallization were all performed through rapid thermal annealing simultaneously. The f
Publikováno v:
Coatings, Vol 11, Iss 2, p 2 (2021)
Ultra-thin Si3N4 films were grown on Si(111) surface by radio frequency (RF)-N2 plasma exposure at 900 °C with 1–1.2 sccm of a flux of atomic nitrogen. We discuss the effect of various conditions such as N2 flow rate, nitriding time and RF power o
Autor:
Tung Yuan Yu, Te Ming Chen, Jia Feng Wang, Cheng Lu Lin, Tsung Han Chen, Tien Hu, J.N. Chen, Cheng Yi Chang, Fu-Ming Pan
Publikováno v:
Current Applied Physics. 14:659-664
To study the influence of defects in the hole blocking layer (HBL) on the dark current of amorphous selenium (a-Se) based photosensors, we prepared ZnO thin films by reactive sputter deposition (RSD) for the use as the HBL of the photosensors. The Zn
Publikováno v:
Japanese Journal of Applied Physics. 57:075501
The grain growth orientation and electrical properties of Ge films on Si substrates deposited by chemical vapor deposition (CVD) after laser annealing with various laser powers were examined using X-ray diffraction (XRD), electron backscatter diffrac