Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Tung‐Huan Chou"'
Autor:
Tung-huan Chou, 周棟煥
94
In this thesis, we proposed the fabrication of low temperature polycrystallize silicon thin film with nonvolatile flash memory as named the SONOS-type poly-Si-TFT memories. In addition, the different high-k materials of trapping layer were us
In this thesis, we proposed the fabrication of low temperature polycrystallize silicon thin film with nonvolatile flash memory as named the SONOS-type poly-Si-TFT memories. In addition, the different high-k materials of trapping layer were us
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/81042257150324009588
Publikováno v:
Surface and Interface Analysis. 54:864-872
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1509b39a1bc3ddf772c59e3d0f3ee2b7
https://doi.org/10.1002/sia.7099
https://doi.org/10.1002/sia.7099
Publikováno v:
Materials Science Forum. 928:215-220
The microstructures of Co–GaSb junctions in samples annealed at 300, 400, 500, and 600°C in a N2atmosphere were characterized using transmission electron microscopy (TEM) in combination with energy-dispersive spectrometry (EDS), nanobeam electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9f30cdf540c205877bb68cb26da95d3
https://doi.org/10.4028/www.scientific.net/msf.928.215
https://doi.org/10.4028/www.scientific.net/msf.928.215
Autor:
Wen-Kuan Yeh, An-Ni Dai, Wenqi Zhang, Po-Ying Chen, Yi-Lin Yang, Cheng-Li Lin, Tung-Huan Chou, Kwang-Jow Gan, Kehuey Wu, Chia-Hung Shih
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 16:610-616
In this paper, the impact of width quantization on device characteristic and stressing induced device degradation for high-k/metal tri-gate n/p-type FinFET was investigated well including electrical characteristic clarification and simulation. Carrie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2570dda354397d8032b752ac8d81a786
https://doi.org/10.1109/tdmr.2016.2612703
https://doi.org/10.1109/tdmr.2016.2612703
Publikováno v:
IEEE Transactions on Nanotechnology. 14:330-337
In this study, we investigate the impact of junction doping distribution (LDD/halo) on variations and asymmetry of device characteristics for fully depleted silicon on insulator (FDSOI) with ultrathin buried oxide layer nMOSFET. The device performanc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c3f0b54313563025f9f024305de1c9a
https://doi.org/10.1109/tnano.2015.2394247
https://doi.org/10.1109/tnano.2015.2394247
Autor:
Shou-Yi Chang, Chen Tai-Sheng, Hong-Jen Lai, Ming-Sheng Leu, Jin-Bao Wu, Yi-Ching Huang, Tung-Huan Chou, Ding-Shiang Wang
Publikováno v:
Scientific Reports
Scientific Reports, Vol 7, Iss 1, Pp 1-10 (2017)
Scientific Reports, Vol 7, Iss 1, Pp 1-10 (2017)
This study reports a mechanical stress-based technique that involves scratching or imprinting to write textured graphite conducting wires/patterns in an insulating amorphous carbon matrix for potential use as interconnects in future carbonaceous circ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::21ee1a6529f8c42655fa4d4af1757079
http://europepmc.org/articles/PMC5574915
http://europepmc.org/articles/PMC5574915
Publikováno v:
IEEE Transactions on Electron Devices. 54:531-536
In this paper, we have successfully fabricated poly-Si-oxide-nitride-oxide-silicon (SONOS)-type poly-Si-thin-film transistor (TFT) memories employing hafnium silicate as the trapping layer with low-thermal budget processing (les600degC). It was demon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5b267a9d84ef9170ff669d01d4d3795
https://doi.org/10.1109/ted.2006.890379
https://doi.org/10.1109/ted.2006.890379
Publikováno v:
IEEE Electron Device Letters. 28:267-269
In this letter, we fabricated the poly-Si-oxide-nitride-oxide-silicon (SONOS)-type Flash memories on polycrystalline-silicon thin films and found that dangling bonds presented along the grain boundaries in the channel significantly influence their re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e1637258e2e276d500ae66e1cc75369
https://doi.org/10.1109/led.2007.891789
https://doi.org/10.1109/led.2007.891789
Autor:
Wei-Shang Hsieh, Chang-Hong Shen, Cheng-Hui Tu, Tung-Huan Chou, Min-Cheng Chen, Wen-Hsien Huang, Fu-Liang Yang, Chenming Hu, Jia-Min Shieh, Chieh Wang, Ci-Ling Pan, Jung Y. Huang, Yu-Chung Lien, Yinchieh Lai
Publikováno v:
2012 International Electron Devices Meeting.
For the first time, a sequentially processed 3D hybrid chip is demonstrated by stacking low-temperature (LT) Ferroelectric-like (FE-like) metal-oxide nonvolatile memory (NVM) and CMOS. The high-mobility (333 and 113 cm2/V-s) and low-subthreshold swin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::700a1b44460b3630711151b9d70bb171
https://doi.org/10.1109/iedm.2012.6479160
https://doi.org/10.1109/iedm.2012.6479160
Publikováno v:
2012 International Symposium on Computer, Consumer and Control.
In this paper, we fabricated the poly-SiiVoxideiVnitrideiVoxideiVsilicon (SONOS)-type Flash memories on polycrystalline-silicon thin films. Employing a powerful defect passivation technique, i.e., NH3 plasma treatment, the charge storage capability w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aeaa21318e6c9447ae5b7a6e404fc3dd
https://doi.org/10.1109/is3c.2012.212
https://doi.org/10.1109/is3c.2012.212