Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Tung‐Huan Chou"'
Publikováno v:
Surface and Interface Analysis. 54:864-872
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1509b39a1bc3ddf772c59e3d0f3ee2b7
https://doi.org/10.1002/sia.7099
https://doi.org/10.1002/sia.7099
Publikováno v:
Materials Science Forum. 928:215-220
The microstructures of Co–GaSb junctions in samples annealed at 300, 400, 500, and 600°C in a N2atmosphere were characterized using transmission electron microscopy (TEM) in combination with energy-dispersive spectrometry (EDS), nanobeam electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9f30cdf540c205877bb68cb26da95d3
https://doi.org/10.4028/www.scientific.net/msf.928.215
https://doi.org/10.4028/www.scientific.net/msf.928.215
Autor:
Wen-Kuan Yeh, An-Ni Dai, Wenqi Zhang, Po-Ying Chen, Yi-Lin Yang, Cheng-Li Lin, Tung-Huan Chou, Kwang-Jow Gan, Kehuey Wu, Chia-Hung Shih
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 16:610-616
In this paper, the impact of width quantization on device characteristic and stressing induced device degradation for high-k/metal tri-gate n/p-type FinFET was investigated well including electrical characteristic clarification and simulation. Carrie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2570dda354397d8032b752ac8d81a786
https://doi.org/10.1109/tdmr.2016.2612703
https://doi.org/10.1109/tdmr.2016.2612703
Publikováno v:
IEEE Transactions on Nanotechnology. 14:330-337
In this study, we investigate the impact of junction doping distribution (LDD/halo) on variations and asymmetry of device characteristics for fully depleted silicon on insulator (FDSOI) with ultrathin buried oxide layer nMOSFET. The device performanc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c3f0b54313563025f9f024305de1c9a
https://doi.org/10.1109/tnano.2015.2394247
https://doi.org/10.1109/tnano.2015.2394247
Autor:
Shou-Yi Chang, Chen Tai-Sheng, Hong-Jen Lai, Ming-Sheng Leu, Jin-Bao Wu, Yi-Ching Huang, Tung-Huan Chou, Ding-Shiang Wang
Publikováno v:
Scientific Reports
Scientific Reports, Vol 7, Iss 1, Pp 1-10 (2017)
Scientific Reports, Vol 7, Iss 1, Pp 1-10 (2017)
This study reports a mechanical stress-based technique that involves scratching or imprinting to write textured graphite conducting wires/patterns in an insulating amorphous carbon matrix for potential use as interconnects in future carbonaceous circ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::21ee1a6529f8c42655fa4d4af1757079
http://europepmc.org/articles/PMC5574915
http://europepmc.org/articles/PMC5574915
Publikováno v:
IEEE Transactions on Electron Devices. 54:531-536
In this paper, we have successfully fabricated poly-Si-oxide-nitride-oxide-silicon (SONOS)-type poly-Si-thin-film transistor (TFT) memories employing hafnium silicate as the trapping layer with low-thermal budget processing (les600degC). It was demon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5b267a9d84ef9170ff669d01d4d3795
https://doi.org/10.1109/ted.2006.890379
https://doi.org/10.1109/ted.2006.890379
Publikováno v:
IEEE Electron Device Letters. 28:267-269
In this letter, we fabricated the poly-Si-oxide-nitride-oxide-silicon (SONOS)-type Flash memories on polycrystalline-silicon thin films and found that dangling bonds presented along the grain boundaries in the channel significantly influence their re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e1637258e2e276d500ae66e1cc75369
https://doi.org/10.1109/led.2007.891789
https://doi.org/10.1109/led.2007.891789
Autor:
Wei-Shang Hsieh, Chang-Hong Shen, Cheng-Hui Tu, Tung-Huan Chou, Min-Cheng Chen, Wen-Hsien Huang, Fu-Liang Yang, Chenming Hu, Jia-Min Shieh, Chieh Wang, Ci-Ling Pan, Jung Y. Huang, Yu-Chung Lien, Yinchieh Lai
Publikováno v:
2012 International Electron Devices Meeting.
For the first time, a sequentially processed 3D hybrid chip is demonstrated by stacking low-temperature (LT) Ferroelectric-like (FE-like) metal-oxide nonvolatile memory (NVM) and CMOS. The high-mobility (333 and 113 cm2/V-s) and low-subthreshold swin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::700a1b44460b3630711151b9d70bb171
https://doi.org/10.1109/iedm.2012.6479160
https://doi.org/10.1109/iedm.2012.6479160
Publikováno v:
2012 International Symposium on Computer, Consumer and Control.
In this paper, we fabricated the poly-SiiVoxideiVnitrideiVoxideiVsilicon (SONOS)-type Flash memories on polycrystalline-silicon thin films. Employing a powerful defect passivation technique, i.e., NH3 plasma treatment, the charge storage capability w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aeaa21318e6c9447ae5b7a6e404fc3dd
https://doi.org/10.1109/is3c.2012.212
https://doi.org/10.1109/is3c.2012.212
Publikováno v:
Springer Proceedings in Physics ISBN: 9781402086144
We have used front-wing conductive probes to investigate the factors that most obviously influence the stability of scanning capacitance spectroscopy (SCS). Photoperturbations and environmental humidity are the dominant factors influencing SCS stabil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9d3801144213dc91194aa9f038e412c
https://doi.org/10.1007/978-1-4020-8615-1_100
https://doi.org/10.1007/978-1-4020-8615-1_100
