Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Tunc Sertel"'
Publikováno v:
Silicon. 12:2879-2883
The TiO2/SiO2 film being the dielectric layer was grown on the n-Si wafer using radio frequency (RF) magnetron sputtering. Thus, the Au/TiO2/SiO2/n-Si metal-oxide-semiconductor (MOS) capacitor was fabricated with the forming of metal contacts. The op
Publikováno v:
Ceramics International. 45:11-18
Influences of thermal annealing on structural, optical and morphological properties of the tantalum pentoxide (Ta2O5) thin films were investigated and anti-reflective performances were discussed in detail. The Ta2O5 thin films were deposited onto Cor
Autor:
Süleyman Özçelik, Tugce Ataser, Tunc Sertel, Nihan Akin Sonmez, Mehmet Çakmak, Yunus Çat, Veysel Baran
The effect of temperature on the performance parameters [short-circuit current density (J(SC)), open-circuit voltage (V-OC), fill factor (FF), and conversion efficiency (eta)] of stand-alone germanium (Ge) solar cells has been theoretically investiga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::72888897fac52fd3dd37dd8403b7377b
https://avesis.gazi.edu.tr/publication/details/b1a14917-b776-44ad-8226-c60555daefa5/oai
https://avesis.gazi.edu.tr/publication/details/b1a14917-b776-44ad-8226-c60555daefa5/oai
Publikováno v:
Journal of Materials Science: Materials in Electronics. 29:1939-1946
The structural, optical and electrical properties of dilute nitride p-n junction GaP1-x-yAsyNx structures grown on n-type GaP (100) and n-type Si (100) misoriented by 4A degrees towards the [110] direction substrates were studied. These properties of
Publikováno v:
Journal of Electronic Materials. 46:4590-4595
In this study, the electrical properties of dilute nitride GaAsPN/GaPN multi-quantum well p-i-n diodes were investigated by using current-voltage (I-V) measurements at room temperature. The diode structure was grown on silicon (Si) (100) substrate mi
The structural, optical and morphological properties of the tantalum pentoxide (Ta2O5) and SiO2/Ta2O5 films to be used as an anti-reflective coating (ARC) were investigated. Besides, it was examined and discussed in detail how the performance of MBE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::40fc058e37700ba7cb9e7d8c7e51cc01
https://aperta.ulakbim.gov.tr/record/75973
https://aperta.ulakbim.gov.tr/record/75973
The structural, optical, electrical and electrical-optical properties of a double-junction GaAsP light-emitting diode (LED) structure grown on a GaP (100) substrate by using a molecular beam epitaxy technique were investigated. The p-n junction layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b9ad3c4887aadf4e36a046d60f09f0c1
https://aperta.ulakbim.gov.tr/record/28725
https://aperta.ulakbim.gov.tr/record/28725