Zobrazeno 1 - 10
of 49
pro vyhledávání: '"Tuktamyshev, Artur"'
Autor:
Vichi, Stefano, Asahi, Shigeo, Bietti, Sergio, Tuktamyshev, Artur, Fedorov, Alexey, Kita, Takashi, Sanguinetti, Stefano
Long Wavelenght infrared devices, despite growing interest due to a wide range of applications in commercial, public, and academic sectors, are still struggling to achieve significant improvements over well-established technologies like HgCdTe detect
Externí odkaz:
http://arxiv.org/abs/2407.18302
Autor:
Barbiero, Andrea, Tuktamyshev, Artur, Pirard, Geoffrey, Huwer, Jan, Müller, Tina, Stevenson, R. Mark, Bietti, Sergio, Vichi, Stefano, Fedorov, Alexey, Bester, Gabriel, Sanguinetti, Stefano, Shields, Andrew J.
The effcient generation of entangled photons at telecom wavelength is crucial for the success of many quantum communication protocols and the development of fiber-based quantum networks. Entangled light can be generated by solid state quantum emitter
Externí odkaz:
http://arxiv.org/abs/2202.11436
Autor:
Tuktamyshev, Artur, Lambardi, Davide, Vichi, Stefano, Cesura, Federico, Cecchi, Stefano, Fedorov, Alexey, Bietti, Sergio, Sanguinetti, Stefano
Publikováno v:
In Applied Surface Science 1 October 2024 669
Autor:
Cesura, Federico, Vichi, Stefano, Tuktamyshev, Artur, Bietti, Sergio, Fedorov, Alexey, Sanguinetti, Stefano, Iizuka, Kanji, Tsukamoto, Shiro
Publikováno v:
In Journal of Crystal Growth 15 March 2024 630
Autor:
Vichi, Stefano, Bietti, Sergio, Basset, Francesco Basso, Tuktamyshev, Artur, Fedorov, Alexey, Sanguinetti, Stefano
We present the design for a novel type of dual-band photodetector in the thermal infrared spectral range, the Optically Controlled Dual-band quantum dot Infrared Photodetector (OCDIP). This concept is based on a quantum dot ensemble with a unimodal s
Externí odkaz:
http://arxiv.org/abs/2103.03582
Autor:
Tuktamyshev, Artur, Fedorov, Alexey, Bietti, Sergio, Tsukamoto, Shiro, Bergamaschini, Roberto, Montalenti, Francesco, Sanguinetti, Stefano
We show that the density of indium islands on GaAs(111)A substrates have a non-monotonic, reentrant behavior as a function of the indium deposition temperature. The expected increase in the density with decreasing temperature, indeed, is observed onl
Externí odkaz:
http://arxiv.org/abs/2007.03382
Autor:
Bietti, Sergio, Basset, Francesco Basso, Tuktamyshev, Artur, Bonera, Emiliano, Fedorov, Alexey, Sanguinetti, Stefano
We introduce a high-temperature droplet epitaxy procedure, based on the control of the arsenization dynamics of nanoscale droplets of liquid Ga on GaAs(111)A surfaces. The use of high temperatures for the self-assembly of droplet epitaxy quantum dots
Externí odkaz:
http://arxiv.org/abs/1908.02506
Autor:
Basset, Francesco Basso, Bietti, Sergio, Tuktamyshev, Artur, Vichi, Stefano, Bonera, Emiliano, Sanguinetti, Stefano
The control over the spectral broadening of an ensemble of emitters, mainly attributable to the size and shape dispersion and the homogenous broadening mechanisms, is crucial to several applications of quantum dots. We present a convenient self-assem
Externí odkaz:
http://arxiv.org/abs/1903.09951
Flat metamorphic InAlAs buffer layer on GaAs(111)A misoriented substrates by growth kinetics control
Autor:
Tuktamyshev, Artur, Vichi, Stefano, Cesura, Federico, Fedorov, Alexey, Bietti, Sergio, Chrastina, Daniel, Tsukamoto, Shiro, Sanguinetti, Stefano
Publikováno v:
In Journal of Crystal Growth 15 December 2022 600
Autor:
Timofeev, Vyacheslav A., Nikiforov, Alexandr I., Tuktamyshev, Artur R., Bloshkin, Aleksey A., Mashanov, Vladimir I., Teys, Sergey A., Loshkarev, Ivan D., Baidakova, Natalia A.
Publikováno v:
In Modern Electronic Materials June 2017 3(2):86-90