Zobrazeno 1 - 10
of 172
pro vyhledávání: '"Tukaram D Dongale"'
Autor:
Chetan C Revadekar, Ashkan Vakilipour Takaloo, Sandeep P Shinde, Swapnil R Patil, Somnath S Kundale, Deok-kee Kim, Tukaram D Dongale
Publikováno v:
Materials Research Express, Vol 8, Iss 7, p 076304 (2021)
Many thin film-based devices with solid electrolytes have been studied for memristive applications. Herein, we report a simple and facile way to fabricate solution-based, low-cost, and discrete two-terminal memristive devices using the KMnO _4 soluti
Externí odkaz:
https://doaj.org/article/fc7f3be2b3c44cadabab9ce5cab84431
Autor:
Honggyun Kim, Vijay D. Chavan, Jamal Aziz, Byoungsu Ko, Jae-Sung Lee, Junsuk Rho, Tukaram D. Dongale, Kyeong-Keun Choi, Deok-Kee Kim
Publikováno v:
IEEE Access, Vol 10, Pp 68724-68730 (2022)
The surface passivation of a CMOS image sensor (CIS) is highly beneficial for the overall improvement of a device performance. We employed the thermal atomic layer deposition (T-ALD) and plasma enhanced (PE-ALD) techniques for the deposition of 20 nm
Externí odkaz:
https://doaj.org/article/fb50d026caf04423a1a60a323b801b09
Autor:
Min Ji Yu, Kyung Rock Son, Atul C. Khot, Dae Yun Kang, Ji Hoon Sung, Il Gyu Jang, Yogesh D. Dange, Tukaram D. Dongale, Tae Geun Kim
Publikováno v:
Journal of Materials Research and Technology, Vol 15, Iss , Pp 1984-1995 (2021)
Functional neuronal computing systems that support information diversification require high-density memory with selector devices to reduce leakage current in cross-point architectures, which drives us to develop a functional switching layer that oper
Externí odkaz:
https://doaj.org/article/f27ea582edc0471f93249157e7974c14
Autor:
Santosh S. Sutar, Suvarna M. Patil, Sunil J. Kadam, Rajanish K. Kamat, Deok-kee Kim, Tukaram D. Dongale
Publikováno v:
ACS Omega, Vol 6, Iss 44, Pp 29982-29992 (2021)
Externí odkaz:
https://doaj.org/article/b82f80b31b824d4da27f3b13c1594ede
Autor:
Trishala R. Desai, Tukaram D. Dongale, Swapnil R. Patil, Arpita Pandey Tiwari, Pankaj K. Pawar, Rajanish K. Kamat, Tae Geun Kim
Publikováno v:
Journal of Materials Research and Technology, Vol 11, Iss , Pp 1100-1110 (2021)
This paper presents an organic memristive device based on the soft and quasi-liquid trypsin biomaterial. Accordingly, trypsin is isolated from the bovine pancreas and deposited on a conducting fluorine-doped tin oxide (FTO) substrate. The current–v
Externí odkaz:
https://doaj.org/article/5349ad521f7348a3b5ac01427e5d8b54
Autor:
Amitkumar R. Patil, Tukaram D. Dongale, Lahu D. Namade, Santosh V. Mohite, Yeonho Kim, Santosh S. Sutar, Rajanish K. Kamat, Keshav Y. Rajpure
Publikováno v:
Journal of Colloid and Interface Science. 642:540-553
Autor:
Atul C. Khot, Tukaram D. Dongale, Kiran A. Nirmal, Jayan K. Deepthi, Santosh S. Sutar, Tae Geun Kim
Publikováno v:
Journal of Materials Science & Technology. 150:1-10
Autor:
Ji Hoon Sung, Ju Hyun Park, Dong Su Jeon, Donghyun Kim, Min Ji Yu, Atul C. Khot, Tukaram D. Dongale, Tae Geun Kim
Publikováno v:
Materials & Design, Vol 207, Iss , Pp 109845- (2021)
Sneak path current generated by adjacent cells in three-dimensional (3D) memristor arrays must be curbed while securing the multi-bit storage capability of each cell to aid in the cost-effective increase in array size. For this purpose, a 3D stackabl
Externí odkaz:
https://doaj.org/article/ff9e84f1105f48759ccecb825d3d3d19
Autor:
Shilpa S. More, Pratiksha A. Patil, Kalyani D. Kadam, Harshada S. Patil, Snehal L. Patil, Aishwarya V. Pawar, Sharon S. Kanapally, Dhanashri V. Desai, Shraddha M. Bodake, Rajanish K. Kamat, Sungjun Kim, Tukaram D. Dongale
Publikováno v:
Results in Physics, Vol 12, Iss , Pp 1946-1955 (2019)
The massively parallel computing capabilities of the human brain can be mimicked with the help of neuromorphic computing approach and this can be achieved by developing the electronic synaptic device. In the present work, we have synthesized gallium-
Externí odkaz:
https://doaj.org/article/f3f2c2cb753c4937ac2363d04979a68d
Publikováno v:
ACS Applied Electronic Materials. 5:2454-2481