Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Tuerxun Ailihumaer"'
Autor:
Hongyu Peng, Stephen Sampayan, Michael Dudley, Tuerxun Ailihumaer, Yafei Liu, Balaji Raghothamachar, Kristin Sampayan
Publikováno v:
ECS Transactions. 104:147-155
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c4a1d1ea9e305dfdcaff0bb7cdc103c3
https://doi.org/10.1149/10407.0147ecst
https://doi.org/10.1149/10407.0147ecst
Autor:
Tuerxun Ailihumaer, Xianrong Huang, Michael Dudley, Balaji Raghotharmachar, Hongyu Peng, Yafei Liu, Lahsen Assoufid
Publikováno v:
Journal of Applied Crystallography. 54:1225-1233
The contrast of dislocations in 4H-SiC crystals shows distinctive features on grazing-incidence X-ray topographs for diffraction at different positions on the operative rocking curve. Ray-tracing simulations have previously been successfully applied
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4740e2544e2a247f6026a0fb0e6cc696
https://doi.org/10.1107/s1600576721006592
https://doi.org/10.1107/s1600576721006592
Autor:
Hongyu Peng, Michael Dudley, Qianyu Cheng, Zeyu Chen, Tuerxun Ailihumaer, Yafei Liu, Balaji Raghothamachar
Publikováno v:
Journal of Electronic Materials. 50:4104-4117
Silicon carbide (SiC) is an important semiconductor material for a variety of electronic and optoelectronic applications owing to the unique combination of its superior electronic and physical properties. In order to continuously improve the crystal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74678246bda5bbbf8e12e42235b707f1
https://doi.org/10.1007/s11664-021-08888-7
https://doi.org/10.1007/s11664-021-08888-7
Autor:
Hongyu Peng, Tuerxun Ailihumaer, Kim Kisslinger, Michael Dudley, Yafei Liu, Xiao Tong, Balaji Raghothamachar
Publikováno v:
Journal of Electronic Materials. 50:3006-3012
Six-inch AlInP/GaAs epitaxial wafers grown by organometallic vapor-phase epitaxy (OMVPE) are being developed for light-emitting diodes (LEDs). The surface morphology of the epilayer changes under different growth conditions, where hazy features arise
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a601b6cb8ccd29f5ab811ae87822f2c7
https://doi.org/10.1007/s11664-021-08832-9
https://doi.org/10.1007/s11664-021-08832-9
Autor:
Ian Manning, Hongyu Peng, Michael Dudley, Tuerxun Ailihumaer, Yafei Liu, Edward Sanchez, Balaji Raghothamachar, Gilyong Chung
Publikováno v:
Journal of Electronic Materials. 50:3258-3265
With the increasing attention of 4H-silicon carbide (4H-SiC) crystals in the applications of high-power electronics, it has become necessary to further improve the development of the 4H-SiC crystal growth process, especially the initial stage of phys
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a814c19d1b51a407c0dea7ff4cdd70c1
https://doi.org/10.1007/s11664-021-08827-6
https://doi.org/10.1007/s11664-021-08827-6
Autor:
Michael Dudley, Zeyu Chen, Hongyu Peng, Fumihiro Fujie, Balaji Raghothamachar, Tuerxun Ailihumaer
Publikováno v:
Journal of Applied Crystallography. 54:439-443
Residual contrast of threading edge dislocations is observed in synchrotron back-reflection X-ray topographs of 4H-SiC epitaxial wafers recorded using basal plane reflections where both g · b = 0 and g · b × l = 0. The ray-tracing simulation metho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a662ff875ca29c631ae966135ff051b8
https://doi.org/10.1107/s160057672100025x
https://doi.org/10.1107/s160057672100025x
Publikováno v:
Journal of Electronic Materials. 50:2981-2989
Gallium nitride (GaN) substrates grown by different methods were characterized by high-resolution x-ray diffraction and synchrotron x-ray topography. Using the monochromatic beam in the grazing incidence geometry, high-resolution x-ray topographs rev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ac6ad5ec1e0c93500d45a51b8f2869b
https://doi.org/10.1007/s11664-021-08762-6
https://doi.org/10.1007/s11664-021-08762-6
Autor:
Hongyu Peng, Yafei Liu, Shanshan Hu, Balaji Raghothamachar, Michael Dudley, Tuerxun Ailihumaer
Publikováno v:
ECS Transactions. 98:21-34
As one of the most important wide bandgap semiconductors, Gallium Nitride (GaN) has many applications in power electronic devices such as inverters and switches, as well as optoelectronic devices like light emitting diodes.[1] However, high-quality b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e2f40eda33713cf5782a6abffe039eea
https://doi.org/10.1149/09806.0021ecst
https://doi.org/10.1149/09806.0021ecst
Autor:
Yusuke Matsuda, Ian Manning, Tuerxun Ailihumaer, Edward Sanchez, Balaji Raghothamachar, Gilyong Chung, Michael Dudley
Publikováno v:
Materials Science Forum. 1004:37-43
The thermoelastic stress, mechanical properties and defect content of bulk 4H n-type SiC crystals were investigated following adjustments to the PVT growth cell configuration that led to a 40% increase in growth rate. The resulting 150 mm wafers were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a4cfc31ccc280e5f19296db53c230eb
https://doi.org/10.4028/www.scientific.net/msf.1004.37
https://doi.org/10.4028/www.scientific.net/msf.1004.37
Autor:
Gilyong Chung, Balaji Raghothamachar, Michael Dudley, Ian Manning, Tuerxun Ailihumaer, Edward Sanchez
Publikováno v:
Materials Science Forum. 1004:44-50
Dislocation behavior during the early stages of physical vapor transport (PVT) growth of 6-inch diameter 4H-SiC crystals has been investigated by synchrotron monochromatic beam X-ray topography (SMBXT) in conjunction with ray tracing simulations of d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70da06a669aee29c670ab189f7057727
https://doi.org/10.4028/www.scientific.net/msf.1004.44
https://doi.org/10.4028/www.scientific.net/msf.1004.44