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Autor:
E. J. Jeong, S. Motallebi, Jae-H. Kim, C. Lee, K. Lee, S. Maghsoodi, Jong-Seob Kim, Tu-W. Chang
Publikováno v:
Eurasian Chemico-Technological Journal, Vol 11, Iss 3, Pp 193-198 (2009)
The trend in the development and manufacturing of Complementary Metal Oxide Semiconductor (CMOS) image sensors is to miniaturize pixels on the chips and hence to improve their imaging characteristics by providing a higher image resolution. As CMOS te
Externí odkaz:
https://doaj.org/article/4bbbc417daff4a18bc024052e1a076a3
