Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Tsz-Yuan Chen"'
Publikováno v:
SPIE Proceedings.
In a conventional lithography process with Al film structure, the photo resist pattern is removed by two methods: wet etch or wet etch combine with dry strip process. There were some problems in these kinds of processes. Pattern collapsed after wet e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58330155a671a2e48ee61776e10fa726
https://doi.org/10.1117/12.917888
https://doi.org/10.1117/12.917888
Autor:
Kung-Hsun Tsao, Hisashi Motobayashi, Katayama Tomohide, Crockett Huang, Yung-Cheng Chang, Chih-Jung Chen, Tsz-Yuan Chen, Simon Chiu, Nick Hsiao, Yu-Huan Liu, Vencent Chang, Go Noya
Publikováno v:
SPIE Proceedings.
Dual damascene technique has been widely applied to IC device fabrication in copper interconnect process. For traditional via-first dual damascene application, a fill material is first employed to fill via to protect over-etching and punch-through of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b96a60344d5a7a74ef31ccc65dfffdf
https://doi.org/10.1117/12.855997
https://doi.org/10.1117/12.855997