Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Tsyplenkov, V. S."'
Autor:
Agapova, N. P., Afrikanov, I. N., Vladimirov, V. G., Gusev, V. M., Onufriev, V. D., Tsyplenkov, V. S.
Publikováno v:
Atomic Energy; December 1976, Vol. 41 Issue: 6 p1055-1058, 4p
Publikováno v:
Atomic Energy; July 1979, Vol. 47 Issue: 1 p558-560, 3p
Publikováno v:
Atomic Energy; February 1966, Vol. 20 Issue: 2 p182-184, 3p
Autor:
Zaluzhnyi, A. G., Skorov, D. M., Zholnin, A. G., Onufriev, V. D., Afrikanov, I. N., Tsyplenkov, V. S., Vladimirov, V. G., Kopytin, V. P.
Publikováno v:
Atomic Energy; August 1979, Vol. 47 Issue: 2 p644-645, 2p
Publikováno v:
Journal of Nuclear Energy. Part C, Plasma Physics, Accelerators, Thermonuclear Research; 1966, Vol. 8 Issue 6, p1-1, 1p
Publikováno v:
Electronics Letters (Institution of Engineering & Technology); 08/31/1978, Vol. 14 Issue 18, p594-595, 2p
Publikováno v:
Electronics Letters (Institution of Engineering & Technology); 08/31/1978, Vol. 14 Issue 18, p593-594, 2p
Proceedings of the NATO Advanced Research Workshop on the Application of Natural Microporous Materials for Environmental Technology, Smolenice Castle, Slovakia, 26-30 October 1998
Autor:
Raymond Wolfe
Applied Solid State Science: Advances in Materials and Device Research, Volume 1 presents articles about junction electroluminescence; metal-insulator-semiconductor (MIS) physics; ion implantation in semiconductors; and electron transport through ins
Autor:
James Mayer
Ion Implantation in Semiconductors: Silicon and Germanium covers the developments in the major basic aspects in ion implantation in silicon and germanium. These aspects include dopant distribution and location, radiant damage, and electrical characte