Zobrazeno 1 - 1
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pro vyhledávání: '"Tsuyosi Maruyama"'
Publikováno v:
Applied Physics Letters. 60:3274-3276
Bulklike ZnSe crystal with crystallographic quality the same as commercial GaAs can be grown at a growth temperature of 950 °C by the solution growth method. The growth rate of the crystal depends on the temperature gradient in the solvent, the leng
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df8465710810adb1ca0cb0eba9accdf5
https://doi.org/10.1063/1.106717
https://doi.org/10.1063/1.106717
