Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Tsutomu Shimizu-Iwayama"'
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 230:203-209
Potentialities of rapid thermal annealing to enhance the photoluminescence emission of Si nanocrystals in SiO2 have been investigated. Ion implantation was used to synthesize specimens of SiO2 containing excess Si with different concentrations. Si pr
Publikováno v:
Solid-State Electronics. 45:1487-1494
We have measured the implantation dose dependence as well as the oxidation effect of the photoluminescence behaviour of Si nanocrystals in SiO2 layers fabricated by ion implantation and a subsequent annealing step. After annealing at high temperature
Autor:
C.W. Pitt, D.E. Hole, Nikhil Sharma, C.E. Chryssou, Anthony J. Kenyon, Colin J. Humphreys, Tsutomu Shimizu-Iwayama
Publikováno v:
Materials Science and Engineering: B. 81:19-22
We report recent results showing broad-band excitation of erbium ions implanted into thin films of silica containing silicon nanocrystals. Evidence for the existence of nanocrystals is presented in the form of HR-TEM images of crystalline regions of
Publikováno v:
Journal of Physics: Condensed Matter. 11:6595-6604
A possible mechanism for the photoemission from Si nanocrystals in an amorphous SiO2 matrix fabricated by ion implantation is reported. We have measured the implantation dose and the temperature dependence as well as the oxidation effect of the photo
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 148:980-985
Si nanoclusters are formed in a SiO 2 matrix by ion implantation and annealing, and a possible mechanism for the light emission from Si implanted SiO 2 layers is reported. We have measured dose (concentration of excess Si atoms), annealing time and e
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 147:350-355
A novel method for the fabrication of luminescent Si nanoclusters in an amorphous SiO 2 matrix by ion implantation and annealing, and the detailed mechanisms for the photoluminescence from implanted Si nanoclusters are reported. We have measured dose
Publikováno v:
Journal of Luminescence. 80:235-239
A method for the fabrication of luminescent Si nanoclusters in an amorphous SiO 2 matrix by ion implantation and annealing, and the detailed mechanisms for the photoluminescence are reported. We have measured the implanted ion dose, annealing time an
Publikováno v:
Journal of Applied Physics. 83:6018-6022
A method for the fabrication of luminescent Si nanoclusters in an amorphous SiO2 matrix by ion implantation is reported. We have measured the dose (concentration of excess Si atoms) and annealing time dependence of the photoluminescence of Si nanoclu
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 120:97-100
A novel method for the fabrication of Si nanocrystals in an amorphous SiO2 matrix by ion implantation is reported. Transmission electron microscopy indicates the formation and growth of Si nanocrystals on annealing at 1100°C which were not observed
Autor:
Atsushi Kamiya, Tsutomu Shimizu-Iwayama, Motonori Takeda, Yoichi Terao, Setsuo Nakao, Kazuo Saitoh
Publikováno v:
Thin Solid Films. 276:104-107
A novel method for the fabrication of nanometer-sized Si crystals in an amorphous SiO2 matrix by ion implantation and thermal processing is reported. Transmission electron microscopy indicates the formation of Si nanocrystals by annealing at 1 100°C