Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Tsutomu Komatani"'
Autor:
Keiichi Omika, Yasunori Tateno, Tsuyoshi Kouchi, Tsutomu Komatani, Seiji Yaegassi, Keiichi Yui, Ken Nakata, Naoka Nagamura, Masato Kotsugi, Koji Horiba, Masaharu Oshima, Maki Suemitsu, Hirokazu Fukidome
Publikováno v:
Scientific Reports, Vol 8, Iss 1, Pp 1-9 (2018)
Abstract With the rapid depletion of communication-frequency resources, mainly due to the explosive spread of information communication devices for the internet of things, GaN-based high-frequency high-power transistors (GaN-HEMTs) have attracted con
Externí odkaz:
https://doaj.org/article/71a1bc3c36ce4b248bd1a5f7366d5a86
Autor:
Hiroshi Yamamoto, Junji Iihara, Takashi Nakabayashi, Yasunori Tateno, Tsutomu Komatani, Tsuyoshi Kouchi, Takumi Yonemura, Yoshihiro Saito
Publikováno v:
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
The purpose of our work was to carry out a direct measurement of a GaN's surface condition under a voltage stress, and to identify a cause of a current collapse. Using pulsed S-parameters measurements immediately after the voltage stress was applied
Autor:
Shigeaki Uemura, Tsuyoshi Kouchi, Yoshihiro Saito, J. Wada, Junji Iihara, Tsutomu Komatani, T. Araya, Takumi Yonemura, Yasunori Tateno, S. Kurachi
Publikováno v:
Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials.