Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Tsutomu Hosoda"'
Autor:
Davide Bisi, Long Nguyen, Philip Zuk, Ashish Gokhale, Keith Coffey, Ted Liu, Bill Cruse, Tsutomu Hosoda, Masamichi Kamiyama, Primit Parikh, Umesh Mishra
Publikováno v:
2022 IEEE Applied Power Electronics Conference and Exposition (APEC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6e8290abbc1e29b7fc1f6e9b80edea2
https://doi.org/10.1109/apec43599.2022.9773446
https://doi.org/10.1109/apec43599.2022.9773446
Autor:
Davide Bisi, Bill Cruse, Philip Zuk, Primit Parikh, Umesh Mishra, Tsutomu Hosoda, Masamichi Kamiyama, Masahito Kanamura
Publikováno v:
2022 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2197762bb58899972fedde82eb1319cd
https://doi.org/10.1109/irps48227.2022.9764492
https://doi.org/10.1109/irps48227.2022.9764492
Autor:
Davide Bisi, Rakesh K. Lal, YuLu Huang, Bill Cruse, Philip Zuk, Umesh K. Mishra, John Gritters, Carl J. Neufeld, J. McKay, Tsutomu Hosoda, Primit Parikh, Geetak Gupta, Yifeng Wu, Masamichi Kamiyama
Publikováno v:
2021 IEEE Applied Power Electronics Conference and Exposition (APEC).
Short-circuit capability is essential for the adoption of GaN power devices in motor drives for industrial and automotive applications. In this work, we report an innovative solution for GaN power switches to achieve short-circuit withstanding time (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa593d1e491f94eb99c498ef96937592
https://doi.org/10.1109/apec42165.2021.9486987
https://doi.org/10.1109/apec42165.2021.9486987
Autor:
Yoshimori Asai, Yoshiyuki Kotani, Kenji Kiuchi, Primit Parikh, Lee McCarthy, Kenji Imanishi, Yifeng Wu, Saurabh Chowdhury, Tsutsumo Ogino, David Rhodes, Likun Shen, Tsutomu Hosoda
Publikováno v:
2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Manufacturing readiness of the world’s first highly reliable 650V GaN HEMT is demonstrated with high process capability (CpK >1.6) for leakage and on resistance. This reliable manufacturing process was developed in a Si-CMOS compatible 6-inch found
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f68022979020c97f96476e95becbd0f7
https://doi.org/10.1109/asmc49169.2020.9185385
https://doi.org/10.1109/asmc49169.2020.9185385
Autor:
Marcia Moore, N. Bushnell, Yoshimori Asai, Ken Shono, R. Birkhahn, Kurt Smith, Tsutsumo Ogino, Richard Peter Smith, H. Clement, J. McKay, Yifeng Wu, Yoshiyuki Kotani, S. Yea, Likun Shen, Primit Parikh, Ron Barr, Rakesh K. Lal, Srabanti Chowdhury, Brian L. Swenson, L. McCarthy, Tsutomu Hosoda, J. Guerrero, John Gritters, Kenji Imanishi
Publikováno v:
ECS Transactions. 80:17-28
1. Introduction With its proven ability to reduce size (form factor) and save energy (high efficiency) Gallium Nitride (GaN) is now no longer a nice to have, it is a must-have for power conversion. In applications ranging from sub 100 watt to multi k
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d73ee46b7c0564dc8893326fe6f4d006
https://doi.org/10.1149/08007.0017ecst
https://doi.org/10.1149/08007.0017ecst
Autor:
Lee McCarthy, Ronald Barr, Yoshiyuki Kotani, Tsutomu Hosoda, Yifeng Wu, Tsutsumo Ogino, Saurabh Chowdhury, Likun Shen, Pete Smith, Kenji Imanishi, Yoshimori Asai, Kenji Kiuchi, John Gritters, Primit Parikh
Publikováno v:
2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
This manuscript proves maturity of GaN-on-Si technology for the world’s first highly reliable 650V GaN HEMT [2],[3],[4],[5],[6],[7],[8] by demonstrating three years of manufacturing data of since ramp. This technology was initially developed in a p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bcccd414ced022a0271516f8918d5cbe
https://doi.org/10.1109/asmc.2019.8791814
https://doi.org/10.1109/asmc.2019.8791814
Autor:
Pete Smith, Yoshimori Asai, Marcia Moore, S. Yea, Philip Zuk, Tsutomu Hosoda, Umesh Mishra, P. Parikh, Ronald Barr, H. Clement, Yifeng Wu, Rakesh K. Lal, Ken Shono, L. McCarthy, John Gritters, R. Birkhahn, Kenji Imanishi, J. McKay, Srabanti Chowdhury, Likun Shen
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM).
Gallium Nitride (GaN) is now a popular choice for power conversion. High voltage (HV) GaN HEMTs (GaN FETs) in the range of 650–900 volts are emerging as the next standard for power conversion. This paper highlights key successes in efficient and co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::382db6037b63ff4663f54551d60e73e1
https://doi.org/10.1109/iedm.2018.8614579
https://doi.org/10.1109/iedm.2018.8614579
Autor:
Saurabh Chowdhury, YiFeng Wu, Likun Shen, Kurt Smith, Peter Smith, Toshihide Kikkawa, John Gritters, Lee McCarthy, Rakesh Lal, Ronald Barr, Zhan Wang, Umesh Mishra, Primit Parikh, Tsutomu Hosoda, Ken Shono, Kenji Imanishi, Tsutsumo Ogino, Akitoshi Mochizuki, Kenji Kiuchi, Yoshimori Asai
Publikováno v:
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
Manufacturing readiness of the world's first highly reliable 650V GaN HEMT is demonstrated with high process capability (CpK>1.6) for leakage and on resistance. This technology was developed in a Si-CMOS compatible 6-inch foundry and has been demonst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::839333cb1ec6879b34b4ceaf67aa9900
https://doi.org/10.1109/csics.2016.7751008
https://doi.org/10.1109/csics.2016.7751008
Autor:
Likun Shen, Toshihide Kikkawa, Yoshimori Asai, Kenji Imanishi, Saurabh Chowdhury, Pete Smith, Rakesh K. Lal, Tsutomu Hosoda, Ken Shono, Primit Parikh, Ronald Barr, Dixie Dunn, Lee McCarthy, Umesh K. Mishra, Kurt Smith, John Gritters, Yifeng Wu
Publikováno v:
IRPS
The reliability of 600 V GaN power switches, fabricated in a silicon CMOS foundry, has been demonstrated. JEDEC qualification of cascode packages and the long term reliability of GaN power switches has been estimated for the first and shown to be gre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74f1022c11659c48c6174e3007e66e14
https://doi.org/10.1109/irps.2015.7112766
https://doi.org/10.1109/irps.2015.7112766
Autor:
Toshihide Kikkawa, J. McKay, Dixie Dunn, Kenji Imanishi, Masahito Kanamura, Yoshimori Asai, Masamichi Kamiyama, Kazuo Itabashi, Brian L. Swenson, Ron Birkhahn, Yifeng Wu, Kurt Smith, Kenji Kiuchi, Douglas Thor, Primit Parikh, Likun Shen, John Gritters, Ken Shono, Martin J. Aguilera, Tsutomu Ogino, Yasumori Miyazaki, Takeshi Maeda, Saurabh Chowdhury, Akitoshi Mochizuki, S. Yea, Pete Smith, Shiniichi Akiyama, Susumu Kawasaki, Lee McCarthy, Jim Honea, H. Clement, Tsutomu Hosoda, Umesh K. Mishra, Rakesh K. Lal
Publikováno v:
2014 IEEE International Electron Devices Meeting.
In this paper, we demonstrate 600 V highly reliable GaN high electron mobility transistors (HEMTs) on Si substrates. GaN on Si technologies are most important for the mass-production at the Si-LSI manufacturing facility. High breakdown voltage over 1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d65de831f7dafb765298773c3a227b8
https://doi.org/10.1109/iedm.2014.7046968
https://doi.org/10.1109/iedm.2014.7046968