19.7 A 16Gb ReRAM with 200MB/s write and 1GB/s read in 27nm technology.

Autor: Fackenthal, Richard, Kitagawa, Makoto, Otsuka, Wataru, Prall, Kirk, Mills, Duane, Tsutsui, Keiichi, Javanifard, Jahanshir, Tedrow, Kerry, Tsushima, Tomohito, Shibahara, Yoshiyuki, Hush, Glen

Publikováno v: 2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC); 2014, p338-339, 2p