Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Tsung-yeh Wu"'
Publikováno v:
AIP Advances, Vol 7, Iss 4, Pp 045311-045311-7 (2017)
We present radio-frequency (RF) heating-assisted nanoimprint lithography (NIL) for the rapid fabrication of nanostructured biochips. The chips were spin-coated using a RF-sensitive polymer film, namely polyethylene terephthalate glycol-modified (PETG
Externí odkaz:
https://doaj.org/article/8956809b0121457d9bf4ac308abf610d
Publikováno v:
Sensors, Vol 17, Iss 7, p 1548 (2017)
We propose two approaches—hot-embossing and dielectric-heating nanoimprinting methods—for low-cost and rapid fabrication of periodic nanostructures. Each nanofabrication process for the imprinted plastic nanostructures is completed within several
Externí odkaz:
https://doaj.org/article/925e796b92ce46f1afea86287cf1495b
Autor:
Tsung-Yeh Wu, 吳宗曄
105
This study developed dielectric heating-assisted nanoimprint lithography (NIL) for fabrication of nanostructures for sensors. Two kinds of dielectric heating sensitivity polymer solution were spin-coated onto different substrates, namely, Po
This study developed dielectric heating-assisted nanoimprint lithography (NIL) for fabrication of nanostructures for sensors. Two kinds of dielectric heating sensitivity polymer solution were spin-coated onto different substrates, namely, Po
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/e3fxu9
Autor:
Tsung-yeh Wu, 吳宗曄
96
With knowledge and economic globalization, knowledge management to maximize intellectual capital for enterprise is the key strength to compete in business. The public accounting industry is high density of knowledge and human. With industrial
With knowledge and economic globalization, knowledge management to maximize intellectual capital for enterprise is the key strength to compete in business. The public accounting industry is high density of knowledge and human. With industrial
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/57834808436849154995
Autor:
Tsung-Yeh Wu, 吳宗曄
94
This work reports, a high electron-mobility transistor (HEMT) using a dilute antimony In0.2Ga0.8As(Sb) channel, grown by the molecular beam epitaxy (MBE) system. The advantages by introducing the surfactant-like Sb atoms during growth of InGa
This work reports, a high electron-mobility transistor (HEMT) using a dilute antimony In0.2Ga0.8As(Sb) channel, grown by the molecular beam epitaxy (MBE) system. The advantages by introducing the surfactant-like Sb atoms during growth of InGa
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/08327497435796958237
Autor:
Tsung-Yeh Wu, 吳宗曄
93
In Taiwan, because of the influence of each environmental factors, landslides occur frequently around the basins. To ensure the safety for people residents, there are more and more researches to investigate, estimate, and predict landslides v
In Taiwan, because of the influence of each environmental factors, landslides occur frequently around the basins. To ensure the safety for people residents, there are more and more researches to investigate, estimate, and predict landslides v
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/fc66ea
Autor:
Yi-Ru Li, Shu-Cheng Lo, Sen-Yeu Yang, Pei-Kuen Wei, Tsung-Yeh Wu, Po-Cheng Tsai, Kuang-Li Lee
Publikováno v:
Current Applied Physics. 18:12-18
We developed dielectric heating-assisted nanoimprint method for rapid fabrication of ultraflexible nanostructures. Using spin-coating polyvinyl-chloride (PVC) film on the glass slide, the dielectric heating on PVC film helped the pattern transfer fro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b8e12eee8dc3ac98c967cd91879f03a
https://doi.org/10.1016/j.cap.2017.11.001
https://doi.org/10.1016/j.cap.2017.11.001
Publikováno v:
Sensors (Basel, Switzerland)
Sensors, Vol 17, Iss 7, p 1548 (2017)
Sensors; Volume 17; Issue 7; Pages: 1548
Sensors, Vol 17, Iss 7, p 1548 (2017)
Sensors; Volume 17; Issue 7; Pages: 1548
We propose two approaches—hot-embossing and dielectric-heating nanoimprinting methods—for low-cost and rapid fabrication of periodic nanostructures. Each nanofabrication process for the imprinted plastic nanostructures is completed within several
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ef2d0cb54a91c70e99e4dc7c286905a4
http://europepmc.org/articles/PMC5539740
http://europepmc.org/articles/PMC5539740
Publikováno v:
Advanced Materials Interfaces. 5:1801064
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d8d0be61e3de9dc06d47e8b34a11bcc
https://doi.org/10.1002/admi.201801064
https://doi.org/10.1002/admi.201801064
Autor:
Ching-Sung Lee, Tsung-Yeh Wu, Wei-Chou Hsu, Ke-Hua Su, Yue-Han Wu, R. S. Hsiao, Li Chang, Tung-Wei Chi, Jenn-Fang Chen
Publikováno v:
IEEE Electron Device Letters. 28:96-99
This letter reports, for the first time, a high-electron mobility transistor (HEMT) using a dilute antimony In0.2Ga0.8 AsSb channel, which is grown by a molecular-beam epitaxy system. The interfacial quality within the InGaAsSb/GaAs quantum well of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fba12b7362c4f55be10e19e02391798
https://doi.org/10.1109/led.2006.889047
https://doi.org/10.1109/led.2006.889047