Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Tsung-ta Ho"'
Autor:
Tsung-Ta Ho, 何宗達
96
The local invariant features have been widely used in the image recognition and in the Digital Right Management (DRM) applications. Among all the local invariant features, the Scale Invariant Feature Transform (SIFT) is one of the most adopte
The local invariant features have been widely used in the image recognition and in the Digital Right Management (DRM) applications. Among all the local invariant features, the Scale Invariant Feature Transform (SIFT) is one of the most adopte
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/85225888353866007399
Autor:
N. S. Dellas, Suzanne E. Mohney, Sarpatwari Karthik, Tsung-ta Ho, M. Kuo, L. J. Passmore, Osama O. Awadelkarim, Theresa S. Mayer
Publikováno v:
IEEE Transactions on Nanotechnology. 10:871-874
We report on the application of the charge-pumping (CP) technique to vapor-liquid-solid grown silicon nanowire (SiNW) transistors. We use an Ω gate-nanowire field-effect-transistor (OG-NWFET) structure, and we employ a modified CP method that is app
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::797d8da997160e0456c6e40b5d728c80
https://doi.org/10.1109/tnano.2010.2087392
https://doi.org/10.1109/tnano.2010.2087392
Autor:
Bangzhi Liu, Suzanne E. Mohney, Sarah M. Eichfeld, Joan M. Redwing, Theresa S. Mayer, Kok Keong Lew, Yanfeng Wang, Tsung Ta Ho
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 26:370-374
The oxidation of unintentionally doped p-type silicon nanowires grown by the vapor-liquid-solid (VLS) method and their integration into top-gated field effect transistors is reported. Dry thermal oxidation of as-grown silicon nanowires with diameters
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3493a2748a1f5b40dd48160656a15bf1
https://doi.org/10.1116/1.2899333
https://doi.org/10.1116/1.2899333
Autor:
Tsung Ta Ho, Theresa S. Mayer, Joan M. Redwing, Suzanne E. Mohney, Yanfeng Wang, Kok Keong Lew, Sarah M. Eichfeld, Bangzhi Liu
Publikováno v:
Nano letters. 8(12)
Axially doped (n+-p--n+) silicon nanowires were synthesized using the vapor-liquid-solid technique by sequentially modulating the introduction of phosphine to the inlet gas stream during growth from a silane source gas. Top-gate and wrap-around-gate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3f0b71383338f81a89413ead1c072165
https://pubmed.ncbi.nlm.nih.gov/19367848
https://pubmed.ncbi.nlm.nih.gov/19367848
Autor:
P. Nimmatoori, Aaron L. Vallett, Suzanne E. Mohney, J. Redwing, Bangzhi Liu, Yanfeng Wang, Sarah M. Dilts, Theresa S. Mayer, Tsung-ta Ho
Publikováno v:
2008 IEEE Silicon Nanoelectronics Workshop.
Engineering materials at the nanoscale by combining controlled nanomaterial synthesis and directed assembly methods offers the potential to create new electronic and optical devices with improved performance and functionality. Semiconductor nanowires
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6013a6dfed894ae8aff8bb5dd9ee3c94
https://doi.org/10.1109/snw.2008.5418456
https://doi.org/10.1109/snw.2008.5418456
Autor:
null Tsung-ta Ho, null Yanfeng Wang, null Bangzhi Liu, Sarah Eichfeld, null Kok-Keong Lew, Suzanne Mohney, Joan Redwing, Theresa Mayer
Publikováno v:
2007 International Semiconductor Device Research Symposium.
This paper discusses the oxidation of p- and n-type silicon nanowires (SiNWs) grown by the vapor-liquid-solid (VLS) method and their integration into top-gated FETs. The oxidization of the as-grown SiNWs was carried out at 900degC in dry oxygen follo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5526d90c94085db153fbe74061812e99
https://doi.org/10.1109/isdrs.2007.4422515
https://doi.org/10.1109/isdrs.2007.4422515
Autor:
Tsung-ta Ho, Bangzhi Liu, Kok Keong Lew, Suzanne E. Mohney, Theresa S. Mayer, Yanfeng Wang, Joan M. Redwing, Sarah M. Dilts
Publikováno v:
2006 64th Device Research Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb24ca27d42369902b55a4db73a6d542
https://doi.org/10.1109/drc.2006.305172
https://doi.org/10.1109/drc.2006.305172
Autor:
Tsung Ta Ho, Elizabeth C. Dickey, Kok Keong Lew, Joan M. Redwing, Yanfeng Wang, Steven W. Novak, Theresa S. Mayer, Ling Pan
Publikováno v:
Nano letters. 5(11)
Phosphine (PH3) was investigated as an n-type dopant source for Au-catalyzed vapor-liquid-solid (VLS) growth of phosphorus-doped silicon nanowires (SiNWs). Transmission electron microscopy characterization revealed that the as-grown SiNWs were predom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::02fae847e3fdb9084f1ab8ae1fcba460
https://pubmed.ncbi.nlm.nih.gov/16277441
https://pubmed.ncbi.nlm.nih.gov/16277441
Publikováno v:
Conference Digest [Late News Papers volume included]Device Research Conference, 2004. 62nd DRC..
There has been considerable interest in bottom-up integration of semiconductor nanowires for their application in future logic, memory, and sensor circuits. The ability to integrate field effect devices with p- and n-type conduction channels is a cha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80da0d413cd3873654b87a4d747320fb
https://doi.org/10.1109/drc.2004.1367764
https://doi.org/10.1109/drc.2004.1367764
Autor:
Suzanne E. Mohney, Alexana Cranmer, Tsung Ta Ho, Theresa S. Mayer, Chad Eichfeld, Sarah M. Eichfeld, Joan M. Redwing
Publikováno v:
Nanotechnology. 18:315201
High density, intentionally doped silicon nanowire (SiNW) arrays were fabricated within the pores of anodic alumina (AAO) templates via gold-catalysed vapour?liquid?solid (VLS) growth using silane (SiH4) as the source gas and trimethylboron ((CH3)3B,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70364f99d2baf36b5748a73f84e7e318
https://doi.org/10.1088/0957-4484/18/31/315201
https://doi.org/10.1088/0957-4484/18/31/315201