Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Tsung-Yin Tsai"'
Autor:
Wenjie Yan, Huei-Ru Fuh, Yanhui Lv, Ke-Qiu Chen, Tsung-Yin Tsai, Yuh-Renn Wu, Tung-Ho Shieh, Kuan-Ming Hung, Juncheng Li, Duan Zhang, Cormac Ó Coileáin, Sunil K. Arora, Zhi Wang, Zhaotan Jiang, Ching-Ray Chang, Han-Chun Wu
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-9 (2021)
The Gauge factor (GF) enhancement in strain sensors remains a key challenge. Here the authors leverage the piezoelectric and photoelectric effects in a class of van der Waals materials to tune the GF, and obtain a record GF up to 3933 for a SnS2-base
Externí odkaz:
https://doaj.org/article/ce7d056b09d645f2abc505e2dbea3b0f
Publikováno v:
Diagnostics, Vol 12, Iss 5, p 1174 (2022)
Background and objectives: For patients with end-stage renal disease (ESRD), the best replacement therapy is renal transplant (RTx) to ensure life with good quality. Autosomal dominant polycystic kidney disease (ADPKD) is a genetic disorder and a com
Externí odkaz:
https://doaj.org/article/0d917c632acb4d2cb48034e390cd66d6
Autor:
Tsung-Yin Tsai, Zi-Hong You, Shang-Feng Tsai, Ming-Ju Wu, Tung-Min Yu, Ya-Wen Chuang, Yung-Chieh Lin, Ya-Lian Deng, Chiann-Yi Hsu, Cheng-Hsu Chen
Publikováno v:
Transplantation Proceedings.
Autor:
Cormac Ó Coileáin, Ching-Ray Chang, Tsung-Yin Tsai, Han-Chun Wu, Duan Zhang, K.-M. Hung, Yanfeng Zhao, Gang Wu, Yuh-Renn Wu, Yue Zhao
Publikováno v:
ACS Applied Materials & Interfaces. 13:47198-47207
The fabrication of graphene/SnS2 van der Waals photodetectors and their photoelectrical properties are systematically investigated. It was found that a dry transferred graphene/SnS2 van der Waals heterostructure had a broadband sensing range from ult
Autor:
Yue, Zhao, Tsung-Yin, Tsai, Gang, Wu, Cormac, Ó Coileáin, Yan-Feng, Zhao, Duan, Zhang, Kuan-Ming, Hung, Ching-Ray, Chang, Yuh-Renn, Wu, Han-Chun, Wu
Publikováno v:
ACS applied materialsinterfaces. 13(39)
The fabrication of graphene/SnS
Autor:
Zhi Wang, Ke-Qiu Chen, Duan Zhang, Zhaotan Jiang, Tsung-Yin Tsai, Yuh-Renn Wu, Juncheng Li, Huei-Ru Fuh, Sunil K. Arora, Yanhui Lv, K.-M. Hung, Cormac Ó Coileáin, Ching-Ray Chang, Tung-Ho Shieh, Han-Chun Wu, Wenjie Yan
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-9 (2021)
Nature Communications
Nature Communications
There is an emergent demand for high-flexibility, high-sensitivity and low-power strain gauges capable of sensing small deformations and vibrations in extreme conditions. Enhancing the gauge factor remains one of the greatest challenges for strain se
Publikováno v:
2019 Compound Semiconductor Week (CSW).
The paper reports on the nBn barrier mid-wave infrared InAs/InAsSb $(x_{Sb}=0.4)$ type-II superlattice detector operating in thermoelectrical cooling condition. AlAsSb $(y_{Sb}=0.975)$ was proved to be proper material not introducing extra barriers i
Publikováno v:
2019 Compound Semiconductor Week (CSW).
Investigation of electro-optical properties of high operating temperature long wavelength infrared range(LWIR) type-II superlattices(T2SL) InAs/InAsSb photoconductor has been done by k.p model for electronic band structure. The absorption coefficient
Publikováno v:
physica status solidi (a). 217:1900522
Publikováno v:
Journal of Applied Physics. 127:033104
Localization landscape (LL) theory is applied to directly model carrier transport in a type II superlattice (T2SL) InAs/InAsSb photoconductor system. It is difficult to apply the classical Poisson and drift–diffusion (DD) model to direct modeling o