Zobrazeno 1 - 10
of 59
pro vyhledávání: '"Tsung-Kuei Kang"'
Publikováno v:
Sensors, Vol 24, Iss 17, p 5852 (2024)
Photodetectors and gas sensors are vital in modern technology, spanning from environmental monitoring to biomedical diagnostics. This paper explores the UV detection and gas sensing properties of a zinc oxide (ZnO) nanorod array (ZNA) grown on silver
Externí odkaz:
https://doaj.org/article/aeaf5d9a8f3d46a981b789e36b9b51c8
Autor:
Tsung-Kuei Kang, Yu-Yu Lin, Han-Wen Liu, Che-Li Lin, Po-Jui Chang, Ming-Cheng Kao, Hone-Zern Chen
Publikováno v:
Membranes, Vol 11, Iss 10, p 758 (2021)
By a sol–gel method, a BiFeO3 (BFO) capacitor is fabricated and connected with the control thin film transistor (TFT). Compared with a control thin-film transistor, the proposed BFO TFT achieves 56% drive current enhancement and 7–28% subthreshol
Externí odkaz:
https://doaj.org/article/caf8eddc23f443e8bde193836dee011e
Publikováno v:
Micromachines, Vol 11, Iss 5, p 504 (2020)
A rating voltage of 150 and 200 V split-gate trench (SGT) power metal-oxide- semiconductor field-effect transistor (Power MOSFET) with different epitaxial layers was proposed and studied. In order to reduce the specific on-resistance (Ron,sp) of a 15
Externí odkaz:
https://doaj.org/article/c1f16233e61b4e2a9b2e97ab8cf71aca
Autor:
Tsung-Kuei Kang, Yu-Yu Lin, Han-Wen Liu, Chin-Tai Yang, Po-Jui Chang, Fang-Hsing Wang, Ming-Cheng Kao, Hone-Zern Chen
Publikováno v:
Japanese Journal of Applied Physics. 62:026502
When Nd doping in BiNdFeO (BNFO) film exceeds 10%, the two diffraction peaks (104)/(110) merge into one sharp single peak with increasing addition of Nd. It seems that a phase structural distortion can be obtained due to the substitution of Nd3+ ion
Publikováno v:
Applied Physics A. 128
Publikováno v:
Thin Solid Films. 757:139393
Autor:
Yen-Hao Peng, Tsung-Kuei Kang
Publikováno v:
IEEE Transactions on Electron Devices. 66:451-456
The drain conductance oscillations are simultaneously observed in the trigated and double-gated poly-Si junctionless (JL) nanowire thin-film transistors (TFTs). The strongest oscillations appear at ${V} _{\text {GS}}$ of 1 V and $V_{\text {DS}}$ of 4
Publikováno v:
Journal of Alloys and Compounds. 897:163174
Autor:
Hone-Zern Chen, Tsung-Kuei Kang, Po-Jui Chang, Ming-Cheng Kao, Che-Li Lin, Yu-Yu Lin, Han-Wen Liu
Publikováno v:
Membranes, Vol 11, Iss 758, p 758 (2021)
By a sol–gel method, a BiFeO3 (BFO) capacitor is fabricated and connected with the control thin film transistor (TFT). Compared with a control thin-film transistor, the proposed BFO TFT achieves 56% drive current enhancement and 7–28% subthreshol
Publikováno v:
ECS Journal of Solid State Science and Technology. 6:N83-N86