Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Tsung-Hsien Kao"'
Publikováno v:
Journal of Nanoelectronics and Optoelectronics. 13:454-457
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::426f13d1b439537cccbf15d4efdf0cab
https://doi.org/10.1166/jno.2018.2128
https://doi.org/10.1166/jno.2018.2128
Autor:
Chih-Chiang Yang, Tsung-Hsien Kao, Ming-Yueh Chuang, Chih-Hung Hsiao, Hsin-Chieh Yu, Yan-Kuin Su
Publikováno v:
IEEE Photonics Technology Letters. 28:379-382
A novel and simple hydrothermal method was performed to synthesize vertically aligned Ag nanoparticle (NP)-decorated ZnO nanorods (NRs) on a seed layer/glass substrate. At an applied bias of 0.2 V and incident light wavelength of 380 nm, the measured
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e24fb0b3357a5c0b81a5ad25b54e4f2
https://doi.org/10.1109/lpt.2015.2494065
https://doi.org/10.1109/lpt.2015.2494065
Publikováno v:
ECS Journal of Solid State Science and Technology. 5:Q191-Q194
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eea67e86c52b56dfbf9a83375fc96bba
https://doi.org/10.1149/2.0021607jss
https://doi.org/10.1149/2.0021607jss
Autor:
Shoou-Jinn Chang, Bo Chin Wang, Chung Yi Wu, San Lein Wu, Po Chin Huang, Tsung Hsien Kao, Yean-Kuen Fang
Publikováno v:
Solid-State Electronics. 115:7-11
In this study, the properties of dielectric traps by the impact of Fluorine (F) implantation on 1/ f noise and the random telegraph noise (RTN) of high-k/metal gate (HK/MG) p-type metal–oxide–semiconductor field-effect transistors (pMOSFETs) were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1bab7d4f41d7c5f3de8c51383ffc5257
https://doi.org/10.1016/j.sse.2015.09.013
https://doi.org/10.1016/j.sse.2015.09.013
Autor:
Chia Wei Hsu, Jone F. Chen, Yi-Wen Chen, San Lein Wu, Shih Chang Tsai, Po Chin Huang, Tsung Hsien Kao, Yean-Kuen Fang, Osbert Cheng, Chien-Ming Lai, Kai-Shiang Tsai
Publikováno v:
IEEE Transactions on Electron Devices. 62:988-993
The random telegraph noise (RTN) characteristics of high- $k$ (HK)/metal gate (MG) pMOSFETs with uniaxial compressive strain have been investigated. The configuration-coordinate diagram and band diagram are both established by extracting trap paramet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fcdab8eea8b252553c44fde2132da40
https://doi.org/10.1109/ted.2015.2391298
https://doi.org/10.1109/ted.2015.2391298
Autor:
Hsin-Chieh Yu, Ming Yueh Chuang, Yan-Kuin Su, Kai Shiang Tsai, Chien Sheng Huang, Yu Chun Huang, San Lein Wu, Chih Hung Hsiao, Tsung Hsien Kao
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 20:118-124
The laterally bridged ZnO microrods grown from an Au electrode applied to metal-semiconductor-metal photodetector was fabricated. Interlaced ZnO microrods with approximate single-crystalline structure can be grown from Au electrode fingers. The dark-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c62ccded8bc99039802e30eeeffdf42e
https://doi.org/10.1109/jstqe.2014.2325213
https://doi.org/10.1109/jstqe.2014.2325213
Autor:
Chung-Wei Liu, Shoou-Jinn Chang, San-Lein Wu, Chih-Hung Hsiao, Sheng-Joue Young, Bo-Chin Wang, Kuang Yao Lo, Kai-Shiang Tsai, Tsung-Hsien Kao
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 20:89-95
The growth of vertically aligned cobalt-doped ZnO (Co–ZnO) nanorods on a glass substrate using a low-temperature hydrothermal method is reported. A Co–ZnO nanorod metal–semiconductor–metal ultraviolet photodetector (PD) was also fabricated. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3163084a48f853f9135586c9f9e16073
https://doi.org/10.1109/jstqe.2014.2312935
https://doi.org/10.1109/jstqe.2014.2312935
Autor:
Chien Sheng Huang, Yan-Kuin Su, Hsin-Chieh Yu, Yu Chun Huang, Jeng Je Tsai, Ming Yueh Chuang, Chih Hung Hsiao, Tsung Hsien Kao, San Lein Wu
Publikováno v:
Sensors and Actuators B: Chemical. 202:810-819
This study develops a density-controlled and seedless growth method for laterally bridged ZnO nanorods from Au electrode for use in metal–semiconductor–metal photodetector fabrication. The effect of pre-annealing process on suppressing vertical Z
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf9a815118d1d8cf0d9fdd97c861fa1f
https://doi.org/10.1016/j.snb.2014.06.004
https://doi.org/10.1016/j.snb.2014.06.004
Autor:
Bo-Chin Wang, Ming-Yueh Chuang, Chih-Chiang Yang, Yu Chun Huang, Yan-Kuin Su, Chih-Hung Hsiao, San-Lein Wu, Tsung-Hsien Kao, Sheng-Joue Young
Publikováno v:
IEEE Photonics Technology Letters. 26:1317-1320
Vertically aligned Ga-doped ZnO (GZO) nanosheets were grown on a glass substrate using a low-temperature (90 °C) hydrothermal method. The average length and diameter of the nanosheets were \(\sim 720\) and 26 nm, respectively. The GZO nanosheets exh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d206df90e39e7d2b729170392e0cfa4
https://doi.org/10.1109/lpt.2014.2322512
https://doi.org/10.1109/lpt.2014.2322512
Autor:
Kai-Shiang Tsai, Yi-Hsing Liu, San-Lein Wu, Chih-Hung Hsiao, Shoou-Jinn Chang, Bo-Chin Wang, Tsung-Hsien Kao, Sheng-Joue Young
Publikováno v:
IEEE Transactions on Nanotechnology. 13:238-244
This study presents the fabrication of ZnO nanosheets on a glass substrate using a room-temperature (approximately 25 °C) solution method. The average length and diameter of the ZnO nanosheets were 1.2 μm and approximately 5 nm, respectively. The u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20d52cc1a024893a0d2c4b8b4cf76675
https://doi.org/10.1109/tnano.2014.2298335
https://doi.org/10.1109/tnano.2014.2298335