Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Tsung-En Lee"'
Publikováno v:
AIP Advances, Vol 11, Iss 8, Pp 085021-085021-5 (2021)
We study the impact of the atomic layer deposition high-k gate insulators on metal–oxide–semiconductor (MOS) interface properties of Si0.78Ge0.22 gate stacks with TiN gate electrodes and the physical origins of the reduction in MOS interface defe
Externí odkaz:
https://doaj.org/article/61a47699e843425c9a788b872a342303
Autor:
Tsung-en Lee, 李聰恩
99
In the Continuous Galvanization Line(CGL)，variation in the coating mass of strip will cause the serious defect of product, this thesis focuses on the optimal coating mass measurement for the moving strip by Neural Network and then designs a
In the Continuous Galvanization Line(CGL)，variation in the coating mass of strip will cause the serious defect of product, this thesis focuses on the optimal coating mass measurement for the moving strip by Neural Network and then designs a
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/32224783212564200397
Autor:
Tsung-En Lee, Yuan-Chun Su, Bo-Jiun Lin, Yi-Xuan Chen, Wei-Sheng Yun, Po-Hsun Ho, Jer-Fu Wang, Sheng-Kai Su, Chen-Feng Hsu, Po-Sen Mao, Yu-Cheng Chang, Chao-Hsin Chien, Bo-Heng Liu, Chien-Ying Su, Chi-Chung Kei, Han Wang, H.-S. Philip Wong, T. Y. Lee, Wen-Hao Chang, Chao-Ching Cheng, Iuliana P. Radu
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c68493ea541d5bb68571fa91c9af6ac
https://doi.org/10.1109/iedm45625.2022.10019552
https://doi.org/10.1109/iedm45625.2022.10019552
Publikováno v:
IEEE Electron Device Letters. 42:966-969
Ultrathin equivalent oxide thickness (EOT) scaling of TiN/Y2O3 /SiGe gate stacks using a trimethylaluminum (TMA) treatment was studied. In comparison to previously reported high-k/SiGe MOS interfaces utilizing various Ge contents, we obtained an EOT
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42ed6e988bbb567141e6a958612fcc36
https://doi.org/10.1109/led.2021.3081513
https://doi.org/10.1109/led.2021.3081513
Publikováno v:
IEEE Transactions on Electron Devices. 67:4067-4072
We report improvement of TiN/Y2O3/ Si0.78Ge0.22 metal-oxide-semiconductor (MOS) interface properties by employing the trimethylaluminum (TMA) pretreatment before Y2O3 deposition. It is found that the optimum number of the TMA pretreatment cycles for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e02deaac4e73102558aaf3a75c905b33
https://doi.org/10.1109/ted.2020.3014563
https://doi.org/10.1109/ted.2020.3014563
Autor:
Shinichi Takagi, Kasidit Toprasertpong, Tsung-En Lee, Mitsuru Takenaka, Kimihiko Kato, Mengnan Ke
Publikováno v:
Microelectronic Engineering. 214:87-92
Electrical properties of Y2O3/SiGe metal-oxide-semiconductor (MOS) capacitors with Al, Au, W and TiN gate electrodes have been evaluated in order to study the impact of the metal gate electrodes on Y2O3/SiGe interface properties. It is found that MOS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b10e3483f5a1401ce80604dc9ca32db0
https://doi.org/10.1016/j.mee.2019.05.005
https://doi.org/10.1016/j.mee.2019.05.005
Publikováno v:
IRPS
We have examined the slow electron and hole trap density at TiN/Y 2 O 3 /SiGe MOS interfaces. The effect of trimethylaluminum (TMA) pre-treatment before Y 2 O 3 deposition on the slow trap density has been studied. Also, the dependency of the slow tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bcf5fb8f02dda213157d01653d4f104
https://doi.org/10.1109/irps46558.2021.9405189
https://doi.org/10.1109/irps46558.2021.9405189
Publikováno v:
2020 IEEE Symposium on VLSI Technology.
We have investigated the device operation of Si ferroelectric FETs (FeFET) through direct measurements of polarization and electron/hole densities in p-FeFETs and n-FeFETs. Unlike electrons in n-FeFETs, inversion holes in p-FeFETs are found to be wel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5969ac8d1f499776b0ff352acdf6a0fe
https://doi.org/10.1109/vlsitechnology18217.2020.9265015
https://doi.org/10.1109/vlsitechnology18217.2020.9265015
Publikováno v:
AIP Advances, Vol 11, Iss 8, Pp 085021-085021-5 (2021)
We study the impact of the atomic layer deposition high-k gate insulators on metal–oxide–semiconductor (MOS) interface properties of Si0.78Ge0.22 gate stacks with TiN gate electrodes and the physical origins of the reduction in MOS interface defe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b62c725c3a150c9b575d4ea0b6b38df4
https://doaj.org/article/61a47699e843425c9a788b872a342303
https://doaj.org/article/61a47699e843425c9a788b872a342303
Publikováno v:
2019 Symposium on VLSI Technology.
We demonstrate the low interface trap density at SiGe p-MOS interfaces with TiN/Y 2 O 3 gate stacks by employing the Trimethylaluminum (TMA) passivation. PMA temperature is optimized to maximize scavenging of GeO x . The impact of the gate electrode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ea4b32718903514e353b7e34ae41b32
https://doi.org/10.23919/vlsit.2019.8776523
https://doi.org/10.23919/vlsit.2019.8776523