Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Tsung-Da Lin"'
Autor:
Chih-ping Chen, Pei-chun Tsai, Yaochung Chang, Minghwei Hong, M. L. Huang, Tsung-Da Lin, J. Raynien Kwo
Publikováno v:
Japanese Journal of Applied Physics. 46:3167-3180
Research efforts on achieving low interfacial density of states (Dit) as well as low electrical leakage currents on GaAs-based III–V compound semiconductors are reviewed. Emphasis is placed on ultra high vacuum (UHV) deposited Ga2O3(Gd2O3) and atom
Publikováno v:
2007 International Semiconductor Device Research Symposium.
In this work, we have developed a self-aligned gate process for fabricating inversion n-channel MOSFET's of strained InGaAs on GaAs using TiN as the gate metal and GGO as the gate dielectric. Excellent performances of MOS diodes and MOSFET device hav
Autor:
Hsiao Yu Lin, Tsung Hung Chiang, Minghwei Hong, J. Raynien Kwo, Tun Wen Pi, Wei Jen Hsueh, Rei Lin Chu, Gail J. Brown, Wei Chin Lee, Tsung Da Lin, Jen-Inn Chyi, Tsung Shiew Huang
Publikováno v:
Applied Physics Express. 6:121201
Y2O3 and Al2O3 were deposited onto GaSb(100) surfaces by molecular beam epitaxy and atomic layer deposition, respectively. Angle-resolved X-ray photoelectron spectroscopy and electrical measurements were used to probe the two oxide/semiconductor inte
Autor:
Yaochung Chang, R. L. Chu, Tsung-Hung Chiang, Lungkun Chu, Tsung-Da Lin, Wei-E Wang, Hanchung Lin, Minghwei Hong, Chunan Lin, J. Raynien Kwo
Publikováno v:
Applied Physics Express. 4:111101
The interfacial density of states (Dit) distribution of high-κ dielectric Ga2O3(Gd2O3) [GGO] directly deposited on n-type Ge(100) without invoking any interfacial passivation layer (IPL) was established using conductance measurements and charge pump
Autor:
Pen Chang, M. L. Huang, Shao-Yun Wu, Minghwei Hong, Kang-Hua Wu, Tsung-Da Lin, Wen-Hsin Chang, J. Kwo, Han-Chin Chiu
Publikováno v:
Applied Physics Express. 4:114202
In-situ ultrahigh-vacuum-deposited Y2O3 2–3-monolayer-thick on freshly grown In0.53Ga0.47As with an Al2O3 cap were employed as a gate dielectric. A low interfacial density of states of (8–9)×1011 eV-1 cm-2 near the midgap has been measured using
Autor:
Tun-Wen Pi, Hsiao-Yu Lin, Ya-Ting Liu, Tsung-Da Lin, Wertheim, Gunther K., Jueinai Kwo, Minghwei Hong
Publikováno v:
Nanoscale Research Letters; Apr2013, Issue 4, p1-7, 7p
Self-aligned inversion n-channel In0.2Ga0.8As/GaAs MOSFET with TiN gate and Ga2O3(Gd2O3) dielectric.
Publikováno v:
2007 International Semiconductor Device Research Symposium; 2007, p1-2, 2p