Zobrazeno 1 - 10
of 52
pro vyhledávání: '"Tsung Yu Chiang"'
Publikováno v:
ACS Omega, Vol 9, Iss 24, Pp 26439-26449 (2024)
Externí odkaz:
https://doaj.org/article/79a766da793b4554b1c4f01a7f760531
Autor:
Po-Hung Tan, Chrong Jung Lin, Yi-Jen Yu, Yi Chung Wang, Yu-Lun Chueh, Ying-Chun Shen, Chien-Ping Wang, Tsung-Yu Chiang, Ya-Chin King, Shu-Chi Wu, Jiaw-Ren Shih, Yue-Der Chih, Kun-Lin Liou, Tzu-Yi Yang, Jonathan Chang
Publikováno v:
Small (Weinheim an der Bergstrasse, Germany). 18(5)
A multifunctional ion-sensitive floating gate Fin field-effect transistor (ISFGFinFET) for hydrogen and sodium detection is demonstrated. The ISFGFinFET comprises a FGFET and a sensing film, both of which are used to detect and improve sensitivity. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c658b9c75c2a7868959d5e2767f9c0ed
https://pubmed.ncbi.nlm.nih.gov/34821034
https://pubmed.ncbi.nlm.nih.gov/34821034
Autor:
Po‐Hung Tan, Che‐Hao Hsu, Ying‐Chun Shen, Chien‐Ping Wang, Kun‐Lin Liou, Jiaw‐Ren Shih, Chrong Jung Lin, Ling Lee, Kuangye Wang, Hong‐Min Wu, Tsung‐Yu Chiang, Yue‐Der Chih, Jonathan Chang, Ya‐Chin King, Yu‐Lun Chueh
Publikováno v:
Advanced Functional Materials. 32:2108878
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de1f38e360f54f229fc8f96c72e0e858
https://doi.org/10.1002/adfm.202108878
https://doi.org/10.1002/adfm.202108878
Autor:
Tsung-Yu Chiang, 蔣宗佑
106
As the development of semiconductor technology, the integrated circuit produces superfluous heat when operating in high circuit density. Thus, a temperature sensor is needed for chip thermal management. In this thesis, a high conversion rate
As the development of semiconductor technology, the integrated circuit produces superfluous heat when operating in high circuit density. Thus, a temperature sensor is needed for chip thermal management. In this thesis, a high conversion rate
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/nu4vq4
Autor:
Jun-Yuan Jeng, Kuo-Cheng Chen, Ten-Chin Wen, Peter Chen, Tsung Yu Chiang, Tzung-Fang Guo, Ken-Tsung Wong, Gang-Lun Fan
Publikováno v:
ACS Applied Materials & Interfaces. 7:24973-24981
Thermal curing of the styrene-functionalized 9,9-diarylfluorene-based triaryldiamine monomer (VB-DAAF) forms an ideal p-type organic electrode interlayer capable of resisting solvation of the polar precursor solution in fabricating methylammonium lea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eaa0b3eed17dd1295a7e7a50ff2d46b4
https://doi.org/10.1021/acsami.5b09012
https://doi.org/10.1021/acsami.5b09012
Autor:
Pei Ying Lin, Ten-Chin Wen, Tsung Yu Chiang, Jun Yuan Jeng, Peter Chen, Tzung-Fang Guo, Yun-Chorng Chang, Tzung Da Tsai, Yao Jane Hsu, Kuo Cheng Chen
Publikováno v:
Advanced Materials. 26:4107-4113
This study successfully demonstrates the application of inorganic p-type nickel oxide (NiOx ) as electrode interlayer for the fabrication of NiOx /CH3 NH3 PbI3 perovskite/PCBM PHJ hybrid solar cells with a respectable solar-to-electrical PCE of 7.8%.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1f279475b53addb9d4a2758542e3e0cb
https://doi.org/10.1002/adma.201306217
https://doi.org/10.1002/adma.201306217
Publikováno v:
Applied optics. 55(13)
This paper proposes the design of a vertical slot waveguide-based optical ring resonator on a silicon photonic platform with minimized polarization mode dispersion (PMD) in the presence of waveguide dispersion over a wide band. Slot waveguides provid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::57e79d02acb5cf36d2bd5b95e794711b
https://pubmed.ncbi.nlm.nih.gov/27140380
https://pubmed.ncbi.nlm.nih.gov/27140380
Publikováno v:
Journal of Display Technology. 8:12-17
In this paper, the gate oxide thickness, and the channel length and width of low-temperature poly-Si thin-film transistors (LTPS-TFTs) have been comprehensively studied. The scaling down of gate oxide thickness from 50 to 20 nm significantly improves
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c5f7459dd41f19b88c69b37ce2a7cf5
https://doi.org/10.1109/jdt.2011.2162938
https://doi.org/10.1109/jdt.2011.2162938
Publikováno v:
IEEE Transactions on Electron Devices. 58:3812-3819
SiN passivation layers were found to yield better performance, suppress the kink effect, and improve the gate leakage current and gate-induced drain leakage (GIDL) of polysilicon thin-film transistors (TFTs). The SiN passivation layers deposited unde
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4b633681515d4f4dedb7a483c0f8adb
https://doi.org/10.1109/ted.2011.2165214
https://doi.org/10.1109/ted.2011.2165214
Autor:
Po-Yi Kuo, Yi-Hsien Lu, Tsung-Yu Chiang, Yi-Hsuan Chen, Li-Chen Yen, Yi-Hong Wu, Tien-Sheng Chao, Kuan-Ti Wang
Publikováno v:
IEEE Transactions on Electron Devices. 58:2008-2013
This paper reports the impacts of NH3 plasma treatment time, oxide overetching depth, and gate oxide thickness on symmetric vertical-channel Ni-salicided poly-Si thin-film transistors (VSA-TFTs) for the first time. off-state currents may be improved
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::707160ac56594efb54cbfcaf8f78d6ce
https://doi.org/10.1109/ted.2011.2142312
https://doi.org/10.1109/ted.2011.2142312