Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Tsung Hung Chiang"'
Autor:
Wen-Feng Hsieh, Yung-Chi Wu, Wei-Lun Huang, Minghwei Hong, H. W. Wan, Tsung-Hung Chiang, Wei-Rein Liu, Chia-Hung Hsu, Liang-Hsun Lai, J. Kao
Publikováno v:
ACS Applied Nano Materials. 1:3829-3836
We report the structural and optical properties of ten-period ZnO/MgxZn1–xO multiple quantum wells (MQWs) prepared on the most widely used semiconductor material, Si. The introduction of a nanometer thick high-k Y2O3 transition layer between Si (11
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad5951905214b8a2ef58487cb2a49bdb
https://doi.org/10.1021/acsanm.8b00595
https://doi.org/10.1021/acsanm.8b00595
Autor:
Tun-Wen Pi, Hsiao-Yu Lin, Tsung-Hung Chiang, Yu-Chung Chang, J. Kwo, Gunther K. Wertheim, Minghwei Hong, Y. T. Liu, T. D. Lin
Publikováno v:
Applied Surface Science. 284:601-610
The surface As/Ga atoms 3d core-level spectra of the atomically clean GaAs(1 1 1)A-2 × 2, GaAs(0 0 1)-2 × 4, and GaAs(0 0 1)-4 × 6 surfaces were firstly presented using high-resolution synchrotron radiation photoemission as a probe. The technique
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a09cc20be3e7babc13427f782a29ba20
https://doi.org/10.1016/j.apsusc.2013.07.140
https://doi.org/10.1016/j.apsusc.2013.07.140
Autor:
J. Kwo, H. W. Wan, Tsung-Hung Chiang, Wei-Lun Huang, Chia-Hung Hsu, M. Hong, Wei-Rein Liu, Liang-Hsun Lai, Yung-Chi Wu, Wen-Feng Hsieh
Publikováno v:
ACS Applied Nano Materials. 1:5958-5958
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28f75d83f8fda1dcbddcac9ba0e54ffa
https://doi.org/10.1021/acsanm.8b01754
https://doi.org/10.1021/acsanm.8b01754
Autor:
Tun-Wen Pi, Gunther K. Wertheim, Y. T. Fanchiang, Tsung-Hung Chiang, J. Raynien Kwo, Minghwei Hong
Publikováno v:
Applied Physics Express. 8:126602
During the initial stage of atomic layer deposition, the exposure of a GaAs(111)A-2×2 surface to trimethylaluminum (TMA) leads to occupying a Ga-vacancy site on the surface by a chemisorbed As-bonded aluminum with the loss of all methyl ligands. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d1902e5ebca4e1f0541a1279ebc9f62
https://doi.org/10.7567/apex.8.126602
https://doi.org/10.7567/apex.8.126602
Autor:
Y. H. Lin, Tsung-Hung Chiang, Y C Lin, C H Wei, Minghwei Hong, J. Kwo, Gunther K. Wertheim, Y. T. Fanchiang, T.W. Pi
Publikováno v:
Nanotechnology. 26:164001
The electronic structure of single-crystal (In)GaAs deposited with tri-methylaluminum (TMA) and water via atomic layer deposition (ALD) is presented with high-resolution synchrotron radiation core-level photoemission and capacitance-voltage (CV) char
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::47e1d723ff59ddc67c90f8b523805394
https://doi.org/10.1088/0957-4484/26/16/164001
https://doi.org/10.1088/0957-4484/26/16/164001
Autor:
R. L. Chu, Tsung-Hung Chiang, Keng-Hua Lin, J. Kwo, W. J. Hsueh, Gail J. Brown, J.-I. Chyi, Kuei-Hsien Chen, Minghwei Hong
Publikováno v:
Applied Physics Letters. 105:182106
Molecular beam epitaxy deposited rare-earth oxide of Y2O3 has effectively passivated GaSb, leading to low interfacial trap densities of (1–4) × 1012 cm−2 eV−1 across the energy bandgap of GaSb. A high saturation drain current density of 130 μ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abfc7f5c34963628375a2a521eeaeaa6
https://doi.org/10.1063/1.4901100
https://doi.org/10.1063/1.4901100
Autor:
J. Kwo, H. Y. Hung, Tsung-Hung Chiang, Minghwei Hong, Y. T. Fanchiang, Shang-Fan Lee, Jauyn Grace Lin, B. Z. Syu
Publikováno v:
Applied Physics Letters. 105:152413
We performed spin pumping experiment on high quality, epitaxial Fe3Si/GaAs structures grown by molecular beam epitaxy. By tailoring the thickness and doping (n, p) level of the conducting GaAs epi-layer, thermal heating common of ferromagnetic metal/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0254e497c7fce7070f916b9c6bed3e0c
https://doi.org/10.1063/1.4898781
https://doi.org/10.1063/1.4898781
Publikováno v:
CrystEngComm. 16:8457
Gd2O3 films 2 and 6 nm thick, electron-beam evaporated from a compact powder target, were deposited on freshly molecular beam epitaxy (MBE) grown epi-GaAs(111)A in a multi-chamber MBE system. The oxide films are epitaxial with the underlying GaAs, as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf9230d1de5e2252a14fed6b723aec5a
https://doi.org/10.1039/c4ce00734d
https://doi.org/10.1039/c4ce00734d
Autor:
Hsiao Yu Lin, Tsung Hung Chiang, Minghwei Hong, J. Raynien Kwo, Tun Wen Pi, Wei Jen Hsueh, Rei Lin Chu, Gail J. Brown, Wei Chin Lee, Tsung Da Lin, Jen-Inn Chyi, Tsung Shiew Huang
Publikováno v:
Applied Physics Express. 6:121201
Y2O3 and Al2O3 were deposited onto GaSb(100) surfaces by molecular beam epitaxy and atomic layer deposition, respectively. Angle-resolved X-ray photoelectron spectroscopy and electrical measurements were used to probe the two oxide/semiconductor inte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::baf298c364704edb6dfe23d61c820288
https://doi.org/10.7567/apex.6.121201
https://doi.org/10.7567/apex.6.121201
Autor:
Tsung-Hung Chiang, Gunther K. Wertheim, J. Kwo, Tun-Wen Pi, Minghwei Hong, M. L. Huang, Bor-Rong Chen
Publikováno v:
Journal of the Physical Society of Japan. 81:064603
Guided by the known reconstruction of the GaAs(111)A-2×2 surface, the Ga 3d electron surface atom core-level shifts was found to be 0.30±0.01 eV and that of the surface As atoms with three-fold Ga coordination -0.25±0.01 eV. The four-fold coordina
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::153cd301348e24d5cb5d959613e0fbd6
https://doi.org/10.1143/jpsj.81.064603
https://doi.org/10.1143/jpsj.81.064603