Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Tsung Che Tsai"'
Publikováno v:
Atmosphere, Vol 13, Iss 2, p 173 (2022)
Long-lasting radial interplanetary magnetic field (IMF) intervals in which IMF points along the solar wind velocity for several hours have many interesting properties. We investigate the average parameters and the behavior of magnetic field fluctuati
Externí odkaz:
https://doaj.org/article/2d1e9e2468884bb2885738692c649436
Publikováno v:
2021 IEEE 3rd Eurasia Conference on IOT, Communication and Engineering (ECICE).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e339a7a07ed67cc1530b2f2df210ab40
https://doi.org/10.1109/ecice52819.2021.9645607
https://doi.org/10.1109/ecice52819.2021.9645607
Autor:
Yung-Chun Tu, Shui-Jinn Wang, Tseng-Hsing Lin, Chien-Hsiung Hung, Tsung-Che Tsai, Ru-Wen Wu, Kai-Ming Uang, Tron-Min Chen
Publikováno v:
International Journal of Photoenergy, Vol 2015 (2015)
Quasi-monocrystal ZnO film grown using the hydrothermal growth method is used for the fabrication of Cu2O/ZnO heterojunction (HJ) ultraviolet photodetectors (UV-PDs). The HJ was formed via the sputtering deposition of p-type Cu2O onto hydrothermally
Externí odkaz:
https://doaj.org/article/83f136511cf1478ba3d46d5b4a2638a8
The total electron content (TEC) data from Global Ionosphere Maps provide a global TEC map in the region between latitude 87.5°S to 87.5°N, and longitude 180°W to 180°E. The TEC data in geographic coordinates are first transformed into geomagneti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89a0bc33fac4b10dae06c90fe52e3872
https://doi.org/10.5194/egusphere-egu2020-12283
https://doi.org/10.5194/egusphere-egu2020-12283
Publikováno v:
2017 39th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD).
A simple and useful scheme to improve the ESD performance of HV LDNMOS is reported. Removing the N+ implant from the drain, the silicide to NDDD junction of HV LDNMOS becomes a Schottky barrier. This modification can incorporate a Schottky pnp bipola
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca39e30f4a5c39ecf83c672c085c699e
https://doi.org/10.23919/eosesd.2017.8073447
https://doi.org/10.23919/eosesd.2017.8073447
Autor:
Hsiu Cheng Chang, Tsung Han Chen, Ming Hsiu Chiang, Wha-Tzong Whang, Chun-Hua Chen, Tsung Che Tsai
Publikováno v:
Nanoscale. 6:14280-14288
We describe an innovative concept and facile approach in fabricating laterally assembled Ga2Te3/Te binary nanocomposite films, which comprise two-dimensional quasi-periodic Ga2Te3 nanoassemblies surrounded by interlocking highly-conductive Te single
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17377d246ce6bacca9706623794c26b3
https://doi.org/10.1039/c4nr02765e
https://doi.org/10.1039/c4nr02765e
Autor:
Tsung Che Tsai, Hsiu Cheng Chang, Yi Chia Huang, Wha-Tzong Whang, Chun-Hua Chen, Tsung Han Chen
Publikováno v:
Journal of Polymer Science Part A: Polymer Chemistry. 52:3303-3306
INTRODUCTION Poly(3,4ethylenedioxythiophene):poly(styre nesulfonate) (PEDOT:PSS) is a widely investigated ionic conducting polymer (ICP) in many research aspects and serves also as a promising thermoelectric polymer along with its potentially high an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd667682d5068374f5361202f7c697c5
https://doi.org/10.1002/pola.27402
https://doi.org/10.1002/pola.27402
Publikováno v:
Organic Electronics. 15:641-645
A facile approach namely controlling the pH level of 5 wt% dimethyl sulfoxide (DMSO) doped poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) solution with sodium hydroxide (NaOH) was utilized for the first time in successfully optim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ce822b4c93800084f197011c8527aa1
https://doi.org/10.1016/j.orgel.2013.12.023
https://doi.org/10.1016/j.orgel.2013.12.023
Autor:
Manjunatha Prabhu, Tsung-Che Tsai, Natarajan Mahadeva Iyer, Guowei Zhang, Haojun Zhang, Patrick Cao Li, Jian-Hsing Lee
Publikováno v:
2016 38th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD).
The fundamental physical mechanism decreasing transistor SOA boundary and ID with the increasing transistor total width is identified and reported for the first time. The skin effect, proximity and Hall-effect arising from the large varying-current a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e66c272ab79702f430bc17e56c23219c
https://doi.org/10.1109/eosesd.2016.7592561
https://doi.org/10.1109/eosesd.2016.7592561
Publikováno v:
Solid-State Electronics. 77:26-30
The three-dimensional CMOS inverter with top-gate (TG) poly-Si thin film transistors (TFTs) vertically stacked on the bottom-gate (BG) poly-Si TFTs have been proposed to achieve high-performance characteristics via excimer laser crystallization (ELC)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::911e885567773161890e5ca5a2a93da5
https://doi.org/10.1016/j.sse.2012.05.016
https://doi.org/10.1016/j.sse.2012.05.016