Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Tsuneo Takeuchi"'
Autor:
Tsuneo Takeuchi
Publikováno v:
Resilient Policies in Asian Cities ISBN: 9789811385988
Based on the data from the Great East Japan Earthquake, I have assessed the prevention (e.g., recovery from blackouts), adaptation (e.g., restoration of thermal power stations), and conversion (conversion into distributed energy systems) with the mul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfd097769a75a8d938d85042b867c6c9
https://doi.org/10.1007/978-981-13-8600-8_7
https://doi.org/10.1007/978-981-13-8600-8_7
Autor:
Yusuke Hayashi, Tsuneo Takeuchi, M. Tagami, M. Abe, Makoto Ueki, N. Furutake, Shuichi Saito, M. Narihiro, Munehiro Tada, T. Onodera, Naoya Inoue, H. Yamamoto, Fuminori Ito
Publikováno v:
IEEE Transactions on Electron Devices. 56:1579-1587
A low oxygen content (LOC) CuAl alloy with no barrier metal (Ta) oxidation was obtained using an oxygen absorption process based on metallurgical thermodynamic principles. LOC CuAl dual damascene interconnects (DDIs) were successfully implemented int
Autor:
Noriko Sugiyama, Tsuneo Takeuchi
Publikováno v:
The Journal of Environment & Development. 17:424-441
Local climate change policy making in Japan started in the middle of the 1990s. The national government's Global Warming Law and the Kyoto Protocol Target Achievement Plan both include expectations that the 47 prefectural and 1,800 municipal governme
Autor:
M. Abe, Shuichi Saito, Tsuneo Takeuchi, M. Ueki, J. Kawahara, Munehiro Tada, Naoya Furutake, Hiroto Ohtake, M. Tagami, N. Inoue, H. Yamamoto, Fuminori Ito, Yoshihiro Hayashi
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 21:469-480
High performance Cu dual-damascene (DD) interconnects without process-induced damages are developed in porous SiOCH stacks with the effective dielectric constant (keff) of 2.95, in which a carbon (C)-rich molecular-pore-stacking (MPS) SiOCH film (k =
Autor:
Yoshihiro Hayashi, Tsuneo Takeuchi, Fuminori Ito, Naoya Inoue, Naoya Furutake, Hironori Yamamoto
Publikováno v:
Japanese Journal of Applied Physics. 47:2468-2472
Impact of barrier metal sputtering on physical and chemical damages in the low-k SiOCH films is investigated. In RF sputtering system, the potential drop across the anode sheath accelerates the ion in the plasma toward the wafer surface, inducing dam
Autor:
Fuminori Ito, Hiroto Ohtake, Noriaki Oda, K. Arai, Munehiro Tada, Tsuneo Takeuchi, Yoshiko Kasama, M. Narihiro, T. Taiji, Yoshihiro Hayashi, M. Sekine, N. Furutake
Publikováno v:
IEEE Transactions on Electron Devices. 54:797-806
A feasibility study was done for 45-nm-node Cu interconnects using a novel molecular-pore-stacking (MPS) SiOCH film (k = 2.45), taking electron scattering in the scaled-down Cu lines into consideration. The as-deposited MPS SiOCH film, formed by plas
Autor:
Sachiko Narikiyo, Tsuneo Takeuchi
Publikováno v:
Journal of Human Environmental Studies. 5:69-75
Autor:
Noriko Sugiyama, Tsuneo Takeuchi
Publikováno v:
Journal of Human Environmental Studies. 5:51-60
Many past studies on climate policy have pointed out that scientists appealed global change problems to policy makers for the first time in 1985 in Villach, and the recommendation to address setting the country's reduction targets at the Toronto Conf
Autor:
Tsuneo Takeuchi, Kenichiro Hijioka, Yoshihiro Hayashi, Naoya Inoue, Shuichi Saito, Makoto Ueki, T. Tamura, M. Narihiro, M. Abe, Hiroto Ohtake, Naoya Furutake, T. Onodera, Fuminori Ito, M. Sekine, K. Arai, Munehiro Tada, M. Suzuki, M. Tagami
Publikováno v:
IEEE Transactions on Electron Devices. 53:1169-1179
Robust porous low-k/Cu interconnects have been developed for 65-nm-node ultralarge-scale integrations (ULSIs) with 180-nm/200-nm pitched lines and 100-nm diameter vias in a single damascene architecture. A porous plasma-enhanced chemical vapor deposi
Publikováno v:
IEEE Transactions on Electron Devices. 49:1572-1579
We have investigated Pb(Zr,Ti)O/sub 3/ (PZT) film composition suitable for highly reliable ferroelectric RAM (FeRAM) application. To obtain a wide operational margin for 2T/2C (two transistors and two capacitors) FeRAMs, the PZT film capacitor is nee