Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Tsunenori Shiimoto"'
Autor:
Tetsuya Mizuguchi, Keiichi Tsutsui, Shuichiro Yasuda, Hiroaki Sei, Masayuki Shimuta, Akira Kouchiyama, Jun Okuno, Seiji Nonoguchi, Katsuhisa Aratani, Kazuhiro Ohba, Takashi Yamamoto, Wataru Otsuka, Tsunenori Shiimoto, Takeyuki Sone
Publikováno v:
2017 Symposium on VLSI Technology.
This paper demonstrates a cross point Cu based Resistive Random Access Memory (Cu-ReRAM) technology suitable for Storage Class Memory (SCM) applications. Two key technologies have been developed for large capacity of 100Gb-class SCM with 100 ns progr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c61fe1a6e0315a223021efe2fe43351
https://doi.org/10.23919/vlsit.2017.7998189
https://doi.org/10.23919/vlsit.2017.7998189
Autor:
Akihiro Maesaka, Takeyuki Sone, Naomi Yamada, Keitaro Endo, Shuichiro Yasuda, Kazuhiro Ohba, Hiroaki Narisawa, Tsunenori Shiimoto, Satoshi Sasaki, Tomohito Tsushima, Akira Kouchiyama, Katsuhisa Aratani, Tetsuya Mizuguchi
Publikováno v:
2007 IEEE International Electron Devices Meeting.
We report a novel nonvolatile dual-layered electrolytic resistance memory composed of a conductive Cu ion activated layer and a thin insulator for the first time. An ON/OFF mechanism of this new type memory is postulated as follows: Cu ions pierce th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdfb88351a703004b83a1754c7af4283
https://doi.org/10.1109/iedm.2007.4419064
https://doi.org/10.1109/iedm.2007.4419064
Autor:
Makoto Konagai, Shoji Nishida, Shiro Karasawa, Kiyoshi Takahashi, Akira Yamada, Tsunenori Shiimoto
Publikováno v:
Applied Physics Letters. 49:79-81
A novel Si epitaxial growth technique using mercury‐sensitized photochemical vapor deposition has been developed. Epitaxial thin films (300–8000 A) were grown on (100)Si substrates at 100–300 °C from a gas mixture of Si2H6+SiH2F2+H2 by irradia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c34876c29b55b86d5f7a6dd11f7a0d4
https://doi.org/10.1063/1.97626
https://doi.org/10.1063/1.97626