Zobrazeno 1 - 10
of 716
pro vyhledávání: '"Tsunenobu Kimoto"'
Publikováno v:
APL Materials, Vol 11, Iss 9, Pp 091121-091121-7 (2023)
The impact of oxidation temperature on the formation of single photon-emitting defects located at the silicon dioxide (SiO2)/silicon carbide (SiC) interface was investigated. Thermal oxidation was performed in the temperature range between 900 and 13
Externí odkaz:
https://doaj.org/article/6c58c74ef35a4c0f840f74d2688dabfe
Publikováno v:
Applied Physics Express, Vol 17, Iss 8, p 081003 (2024)
Free electron mobility ( μ _free ) in 4H-SiC(0001) MOSFETs with gate oxides annealed in NO or POCl _3 was calculated in a wide range of effective normal field ( E _eff ) from 0.02 to 2 MV cm ^−1 , taking account of scattering by fixed charges and
Externí odkaz:
https://doaj.org/article/0eb04ef4a74549a38378a95da38c5d5f
Publikováno v:
Applied Physics Express, Vol 17, Iss 4, p 041004 (2024)
Deep levels near the surface of 4H-SiC after dry oxidation were investigated. A large and broad peak appeared in the low-temperature range of deep level transient spectroscopy (DLTS) spectra after oxidation of SiC at 1300 °C, indicating multiple dee
Externí odkaz:
https://doaj.org/article/0565dce8a99247e18373ff2b1242dbc0
Autor:
Francesco La Via, Daniel Alquier, Filippo Giannazzo, Tsunenobu Kimoto, Philip Neudeck, Haiyan Ou, Alberto Roncaglia, Stephen E. Saddow, Salvatore Tudisco
Publikováno v:
Micromachines, Vol 14, Iss 6, p 1200 (2023)
In recent years, several new applications of SiC (both 4H and 3C polytypes) have been proposed in different papers. In this review, several of these emerging applications have been reported to show the development status, the main problems to be solv
Externí odkaz:
https://doaj.org/article/931b99a28f3e4d079fa50c1ab773416e
Autor:
Seigo Mori, Masatoshi Aketa, Takui Sakaguchi, Hirokazu Asahara, Takashi Nakamura, Tsunenobu Kimoto
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 449-453 (2018)
Low on-resistance 4H-SiC reverse-blocking (RB) metal-oxide-semiconductor field-effect transistors (MOSFETs) have been developed by adopting a non-punch-through (NPT) drift layer in order to suppress the punch-through (PT) current under the reverse-bl
Externí odkaz:
https://doaj.org/article/997eda37d445452c9a8dcd863a5d3c69
Publikováno v:
AIP Advances, Vol 8, Iss 12, Pp 125010-125010-9 (2018)
“Forming” is a stage in resistive switching (RS) devices that occurs before switching and represents an important physical phenomenon in the universal operating mechanism of such devices. Forming in a resistance change material appears to be a ki
Externí odkaz:
https://doaj.org/article/24515d11510c41438b1852e010275645
Publikováno v:
AIP Advances, Vol 7, Iss 4, Pp 045008-045008-5 (2017)
We found that post-oxidation Ar annealing at high temperature is effective in reducing the interface state density (Dit) near the conduction band edge (EC) of SiC (0001) MOS structures. The Dit reduction effect is comparable to that of nitridation pr
Externí odkaz:
https://doaj.org/article/fbd20d948a9e4b08be96d5cf3fbf98e4
Publikováno v:
Energies, Vol 9, Iss 11, p 908 (2016)
Although various silicon carbide (SiC) power devices with very high blocking voltages over 10 kV have been demonstrated, basic issues associated with the device operation are still not well understood. In this paper, the promise and limitations of hi
Externí odkaz:
https://doaj.org/article/dcd87f7403e3402c9cc9ad35788c41aa
Autor:
Hajime Okumura, Hiroshi Harima, Tsunenobu Kimoto, Masahiro Yoshimoto, Heiji Watanabe, Tomoaki Hatayama, Hideharu Matsuura, Tsuyoshi Funaki, Yasuhisa Sano
Selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 – October 4, 2013, Miyazaki, Japan
Publikováno v:
IEEE Transactions on Electron Devices. 69:1989-1994
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5a25275995478f886f5cffe318b7a25
https://doi.org/10.1109/ted.2022.3154673
https://doi.org/10.1109/ted.2022.3154673