Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Tsuneaki Ohta"'
Autor:
Tsutomu Shoki, Shinji Tsuboi, Kinya Ashikaga, Tsuneaki Ohta, Yoichi Yamaguchi, Yoshio Yamashita, Hiroshi Okuyama, Ryo Ohkubo, Hiroshi Hoga
Publikováno v:
SPIE Proceedings.
In this paper, we report on the evaluation of the SiC X-ray mask distortion induced by the backetching receding fabrication process by experiment and simulation. The window-opening process for the backetching mask induced pattern displacements of abo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00526347b79f8f4dcb1ca81b1535964e
https://doi.org/10.1117/12.212773
https://doi.org/10.1117/12.212773
Publikováno v:
Scopus-Elsevier
The SiN membranes were deposited by using high temperature LPCVD system. The SiN films deposited over 1000 degree(s)C showed the suitable properties for X-ray mask, such as well- controlled tensile stress of 5 X 10 7 Pa, high optical transmittance ov
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cf6da6ae916f89e05d23637eb295721d
https://doi.org/10.1117/12.191942
https://doi.org/10.1117/12.191942
Publikováno v:
Japanese Journal of Applied Physics. 37:6774
The e-beam proximity effect is well known as one of the limiting factors in e-beam lithography. As features get smaller the need for e-beam proximity effect correction (EPC) increases. There exist different approaches to cover these effects by varyin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b572f9a66742263efcb84443768ba50
https://doi.org/10.1143/jjap.37.6774
https://doi.org/10.1143/jjap.37.6774
Autor:
Yoh Ichi Yamaguchi, Shuichi Noda, Kazuo Suzuki, Yoshio Yamashita, Takuya Yoshihara, Takao Taguchi, Soichiro Mitsui, Tadashi Matsuo, Tsutomu Shoki, Tsuneaki Ohta, Shinji Tsuboi, Hiroshi Hoga, Katsumi Suzuki
Publikováno v:
Japanese Journal of Applied Physics. 35:2845
The influence of resist and absorber stress distributions on X-ray mask distortion induced during back-etching preceding subtractive fabrication is analyzed experimentally and simulated. The stress distribution (gradient) in a resist and/or that in a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50c0b9c1272932d3eb6fc7f9da9629bf
https://doi.org/10.1143/jjap.35.2845
https://doi.org/10.1143/jjap.35.2845
Publikováno v:
Japanese Journal of Applied Physics. 34:6701
SiC/SiN multilayer membranes consisting of SiC and thin SiN layers were prepared using hot-wall, low-pressure chemical vapor deposition (LPCVD) for synchrotron radiation (SR) lithography. The SiC/SiN multilayers had advantages such as uniformity in t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e0ebf6e9733e08b7a9f17f656d8398ab
https://doi.org/10.7567/jjap.34.6701
https://doi.org/10.7567/jjap.34.6701
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 12:585
SiN films for x‐ray mask membranes were prepared using a low pressure chemical vapor deposition system designed for high temperature deposition and low impurity incorporation. The physical and optical properties of the films such as stress, uniform
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3936515537c9bd9dff476ed99164c9d9
https://doi.org/10.1116/1.587394
https://doi.org/10.1116/1.587394
Publikováno v:
Japanese Journal of Applied Physics. 29:2195
Tungsten chemical vapor deposition (W-CVD) using WF6 and H2 as reactants was applied to forming absorbers of X-ray masks for synchrotron radiation (SR) lithography. For this purpose, the properties of deposited W (CVD-W), such as stress, density and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63cb7f6cce7c61b64a5b75b15fe72b70
https://doi.org/10.1143/jjap.29.2195
https://doi.org/10.1143/jjap.29.2195
Publikováno v:
Applied Physics Letters. 45:1-3
A new transverse‐mode‐controlled laser called a buried multiquantum‐well (BMQW) laser has been developed. In order to make it possible to bury the MQW laser active region utilizing the diffusion‐induced disordering (DID) of GaAs‐GaAlAs MQW,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a12c2675b586d1dd5faf4d5bb201b8c
https://doi.org/10.1063/1.94988
https://doi.org/10.1063/1.94988
Autor:
Kinya Ashikaga, Yoshio Yamashita, Shinji Tsuboi, Tsuneaki Ohta, Masanori Kasai, Hiroshi Hoga, Syuichi Noda
Publikováno v:
Scopus-Elsevier
We have developed a technique for improving X-ray irradiation stability of silicon nitride (SiN) X-ray mask membrane using H+ implantation. This technique can realize the reduction of X-ray irradiation-induced pattern displacement to less than 20 nm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b9dcf186f34002623e31726c7cd9b8ca
http://www.scopus.com/inward/record.url?eid=2-s2.0-0029518043&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0029518043&partnerID=MN8TOARS
Publikováno v:
Journal of the Optical Society of America. 71:1197
Liquid oxygen and oxygen–argon mixtures were excited by 1.06-μm Q-switched Nd:YAG laser light. Fluorescence spectra were observed at wavelengths of 481, 637, 704, and 764 nm. Emission intensities showed a cubic dependence on the exciting Nd:YAG la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::097eebdf5f1347524a2ee6f983e8f34a
https://doi.org/10.1364/josa.71.001197
https://doi.org/10.1364/josa.71.001197