Zobrazeno 1 - 9 of 9 pro vyhledávání: '"Tsunashi Shimizu"'
1
Effects of Wet Ambient on Dry Oxidation Processes at 4H-SiC/SiO2 Interface: An Ab Initio Study
Autor: Masashi Uematsu, Toru Akiyama, Kohji Nakamura, Hiroyuki Kageshima, Tsunashi Shimizu, Tomonori Ito, Kenji Shiraishi
Publikováno v: ECS Transactions. 98:37-46
4H-SiC is a key material for applying in power electronics devices because of its superior physical properties. Furthermore, SiO2 oxide films which are crucial for manufacturing electronic devices such as metal-oxide-semiconductor field-effect transi
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0f1efb1bae8b23056445d032c0394997
https://doi.org/10.1149/09803.0037ecst
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3
Ab initio study for orientation dependence of nitrogen incorporation at 4H-SiC/SiO2 interfaces
Autor: Toru Akiyama, Tsunashi Shimizu, Tomonori Ito, Hiroyuki Kageshima, Kenta Chokawa, Kenji Shiraishi
Publikováno v: Japanese Journal of Applied Physics. 61:SH1002
The incorporation behavior of N atoms at the 4H-SiC/SiO2 interface is theoretically investigated on the basis of ab initio calculations. We find that the incorporation energy of N atoms at the Si-face interface is ranging from −1.87 to −1.12 eV,
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8a21178f68f49e44f6cc02bc184c342a
https://doi.org/10.35848/1347-4065/ac5a96
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6
Reaction of NO molecule at 4H-SiC/SiO2 interface: an ab initio study for the effect of NO annealing after dry oxidation
Autor: Tomonori Ito, Hiroyuki Kageshima, Masashi Uematsu, Tsunashi Shimizu, Kenji Shiraishi, Toru Akiyama, Kohji Nakamura
Publikováno v: Japanese Journal of Applied Physics. 60:SBBD10
The reaction of the NO molecule at the 4H-SiC/SiO2 interface after dry oxidation is theoretically investigated on the basis of ab initio calculations. On the Si-face, the reaction of the NO molecule results in the dissociation of the C–C single bon
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e83097bdcc169d34f5a50686397563d6
https://doi.org/10.35848/1347-4065/abdcb1
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7
Ab initio calculations for the effect of wet oxidation condition on the reaction mechanism at 4H–SiC/SiO2 interface
Autor: Tomonori Ito, Tsunashi Shimizu, Abdul-Muizz Pradipto, Kenji Shiraishi, Kohji Nakamura, Hiroyuki Kageshima, Toru Akiyama, Masashi Uematsu
Publikováno v: Japanese Journal of Applied Physics. 59:SMMD01
The reaction of O2 molecule coexisting with wet oxidants such as H2O molecule and OH groups at 4H-SiC/SiO2 interface is investigated by performing ab initio calculations. Our calculations demonstrate characteristic features of the reaction depending
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2624aecb6e28389e69e99382d30585fb
https://doi.org/10.35848/1347-4065/ab85dd
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