Zobrazeno 1 - 10
of 46
pro vyhledávání: '"Tsun-Kai Ko"'
Autor:
Tsun-Kai Ko, 柯淙凱
95
The main goal of this dissertation is the achievement of nitride-based UV band-pass photodetectors. The dissertation is divided into two parts, one is the study of nitride-based p-i-n UV-A band-pass photodetectors, and another one is the stud
The main goal of this dissertation is the achievement of nitride-based UV band-pass photodetectors. The dissertation is divided into two parts, one is the study of nitride-based p-i-n UV-A band-pass photodetectors, and another one is the stud
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/08203874412097760184
Autor:
Tsun-Kai Ko, 柯淙凱
92
In this thesis, high quality SiO2 layer was successfully deposited onto AlGaN as the dielectric layer for our AlGaN/GaN MOS-HFETs by photo-chemical vapor deposition (Photo-CVD) using D2 lamp as the excitation source. Compared with conventiona
In this thesis, high quality SiO2 layer was successfully deposited onto AlGaN as the dielectric layer for our AlGaN/GaN MOS-HFETs by photo-chemical vapor deposition (Photo-CVD) using D2 lamp as the excitation source. Compared with conventiona
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/29983823911507132084
Publikováno v:
Journal of Display Technology. 10:27-32
The authors propose a simple method to enhance the performances of GaN-based light-emitting diodes (LEDs) with rough surface. By using KOH to selectively smooth the area beneath the p-contact pad, it was found that we could reduce the forward voltage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30cf7987a83cf75fdbc9b60a5f3e3ec7
https://doi.org/10.1109/jdt.2013.2278621
https://doi.org/10.1109/jdt.2013.2278621
Publikováno v:
IEEE Journal of Quantum Electronics. 49:436-442
The authors report the numerical simulation of GaN-based light-emitting diodes (LEDs) with either a conventional AlGaN electron blocking layer (EBL), uniform multiquantum barrier (UMQB) structure, or chirped multiquantum barrier (CMQB) structure. It
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af020dd617d341e4bcb5392a0f929d01
https://doi.org/10.1109/jqe.2013.2250919
https://doi.org/10.1109/jqe.2013.2250919
Autor:
C K Wang, Tsun-Kai Ko, S. P. Chang, Sung-Yen Chang, T. K. Lin, Yu Zung Chiou, Tsung-Hsun Chiang, C J Chiu
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 11:76-80
Nitride-based light-emitting diodes (LEDs) with an n- -GaN layer are proposed and fabricated. By providing a larger series resistance in the vertical direction, it was found that the n--GaN layer could enhance LED output intensity due to the enhanced
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2218fcabe412d03e8eeed40634f87a6b
https://doi.org/10.1109/tdmr.2010.2078511
https://doi.org/10.1109/tdmr.2010.2078511
Autor:
Shih-Chang Shei, Ming-Lun Lee, C. F. Shen, Chung-Hsun Jang, Wei-Chih Lai, Tsun-Kai Ko, Shoou-Jinn Chang, Jinn-Kong Sheu, Chin-Yao Tsai
Publikováno v:
IEEE Journal of Quantum Electronics. 46:513-517
In this study, we demonstrate the effect of GaN-based blue light-emitting diodes (LEDs), using an InGaN layer inserted between the n-type GaN cladding layer and the active layer (InGaN/GaN multiple quantum well), on improving device performances. Wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23b2031dfd8eaf8f91099b6940f6a353
https://doi.org/10.1109/jqe.2009.2036269
https://doi.org/10.1109/jqe.2009.2036269
Autor:
Wei-Chih Lai, C.S. Chang, Jinn-Kong Sheu, Ming-Lun Lee, Chin-Yao Tsai, Shoou-Jinn Chang, Tsun-Kai Ko, C.F. Shen
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 15:1275-1280
In this study, we demonstrate an in situ roughening technique at the GaN/sapphire interface in GaN-based LEDs using a silane treatment (SiH4 treatment) process that forms a thin SiNx layer with nanometer-sized holes on the sapphire surface that behav
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a527fb466f6c1eaf5f7326298746151
https://doi.org/10.1109/jstqe.2009.2012505
https://doi.org/10.1109/jstqe.2009.2012505
Autor:
Jinn-Kong Sheu, J.M. Tsai, C.F. Shen, Shih-Chang Shei, A.J. Lin, Wei-Chih Lai, Tsun-Kai Ko, Shoou-Jinn Chang, S.C. Hung, W.S. Chen
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 15:1287-1291
Nitride-based power flip-chip (FC) LEDs with Cu submount were proposed and prepared. With a much higher thermal conductivity, it was found that we can achieve a lower operation voltage under high-current injections and lower junction temperature from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ad8fe518940a803ac0eab5d20b11628
https://doi.org/10.1109/jstqe.2009.2014172
https://doi.org/10.1109/jstqe.2009.2014172
Autor:
Shih-Chang Shei, Shoou-Jinn Chang, Jinn-Kong Sheu, W.S. Chen, A.J. Lin, Tsun-Kai Ko, C.F. Shen, C. T. Kuo, J. M. Tsai, Wei-Chi Lai
Publikováno v:
Journal of Lightwave Technology. 27:1985-1989
We report the fabrication of InGaN-GaN power flip-chip (FC) light-emitting diodes (LEDs) with a roughened sapphire backside surface prepared by grinding. It was found that we can increase output power of the FC LED by about 35% by roughening the back
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e3f30f83a704a1d92892acb10160b51
https://doi.org/10.1109/jlt.2008.2005849
https://doi.org/10.1109/jlt.2008.2005849
Publikováno v:
Journal of Lightwave Technology. 26:3131-3136
Nitride-based light-emitting diodes (LEDs) with a hybrid backside reflector combining a TiO2/SiO2 distributed Bragg reflector (DBR) and an Al mirror were proposed and realized. It was found that we can significantly enhance the 35% reflectivity of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::422a8389a2936ca4be36945d475a9a6e
https://doi.org/10.1109/jlt.2008.923927
https://doi.org/10.1109/jlt.2008.923927