Zobrazeno 1 - 10
of 43
pro vyhledávání: '"Tsukuru Ohtoshi"'
Autor:
Koichiro Adachi, Shigehsa Tanaka, Akira Nakanishi, Takanori Suzuki, Tsukuru Ohtoshi, Aki Takei, K. Tamura, Kouji Nakahara, Kazuhisa Uomi, Kazuhiko Naoe
Publikováno v:
Journal of Lightwave Technology. 34:358-364
A cost-effective optical sub-assembly (OSA) for high-speed optical interconnections using lens-integrated surface-emitting lasers (LISELs) is demonstrated. Two concepts of the OSA, one based on a direct-modulation (DM)-LISEL and the other based on a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95fc4d7c8c9518f7ea7bfca1dfcb62ea
https://doi.org/10.1109/jlt.2015.2477501
https://doi.org/10.1109/jlt.2015.2477501
Autor:
Tsukuru Ohtoshi
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 9:755-762
The /spl alpha/ parameters and extinction ratios of InGaAsP-InP electroabsorption (EA) modulators and Mach-Zehnder (MZ) modulators are theoretically investigated. The bound states of excitons in quantum wells (QWs) under electric field are calculated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19401d6b2a683ce61ca303480fda56ac
https://doi.org/10.1109/jstqe.2003.818856
https://doi.org/10.1109/jstqe.2003.818856
Autor:
Shinji Tsuji, Takeshi Kitatani, Mayu Aoki, Kazunori Shinoda, Tsukuru Ohtoshi, Tomonobu Tsuchiya, Hideo Arimoto
Publikováno v:
IEEE Photonics Technology Letters. 20:1348-1350
We propose the use of a short-cavity distributed Bragg reflector (DBR) laser with a modified active DBR structure, which has an n-type-doped active single quantum well, and that achieves fast wavelength switching that is potentially applicable for op
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0087c55daa05cdec38976921c5b954a
https://doi.org/10.1109/lpt.2008.926864
https://doi.org/10.1109/lpt.2008.926864
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 4:527-530
Optical gains in zincblende-GaN strained-quantum-well (QW) lasers are analyzed theoretically for various crystal orientations. Valence subbands are calculated based on the 6/spl times/6 Luttinger-Kohn model. It is found that the gains in zincblende-G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de50ba9471f70874d8c1051a52bb09b6
https://doi.org/10.1109/2944.704113
https://doi.org/10.1109/2944.704113
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 1:211-217
The dependence of optical properties on crystal orientation is analyzed for long wavelength strained quantum-well (QW) GaAsP-InGaAsP lasers. The calculation is based on the multiband effective mass theory which enables us to consider the anisotropy a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5b362e5e88caff61d4e45dc63577e2e
https://doi.org/10.1109/2944.401199
https://doi.org/10.1109/2944.401199
Autor:
M. Yamanishi, Tsukuru Ohtoshi
Publikováno v:
IEEE Journal of Quantum Electronics. 27:46-53
Line shape functions in quantum-well and quantum-wire structures are theoretically analyzed taking non-Markovian relaxation processes into account. For high carrier density (as in laser operation), the line shape functions in low-dimensional systems
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb66e4dbac68f3e9e53d999f00f42ba4
https://doi.org/10.1109/3.73540
https://doi.org/10.1109/3.73540
Autor:
Tsukuru Ohtoshi, Tomonobu Tsuchiya, Takeshi Kitatani, Mayu Aoki, Shinji Tsuji, Hideo Arimoto, Kazunori Shinoda
Publikováno v:
2008 IEEE 21st International Semiconductor Laser Conference.
We experimentally investigated fast wavelength switching in short-cavity active DBR (ADBR) lasers. Our fabricated 4-ch laser array continuously covered a 12-nm range in the condition that the switching time is expected to be less than 10 nanoseconds.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca5f0df8c9c1baf178d7ef68cad1d273
https://doi.org/10.1109/islc.2008.4636053
https://doi.org/10.1109/islc.2008.4636053
Publikováno v:
Journal of Applied Physics. 82:1518-1520
Optical gains in wurtzite–GaN strained quantum-well (QW) lasers are estimated theoretically for various crystallographic directions. The calculation of the valence subbands is based on the k⋅p theory, where deformation potentials are determined b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c62f1e29f4df7507f098d1d9ce7882f
https://doi.org/10.1063/1.365951
https://doi.org/10.1063/1.365951
Publikováno v:
Applied Physics Letters. 70:2159-2161
The effect of biaxial strain on the valence bands in (1010)-GaN/AlGaN quantum wells (QWs) is theoretically investigated, using the sp3 tight-binding method. The effective mass around the valence band edge in unstrained (1010) QWs is reduced to about
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ba79fbcc111778982eecedae2fa99b4
https://doi.org/10.1063/1.118950
https://doi.org/10.1063/1.118950
Publikováno v:
Technical Digest. CLEO/Pacific Rim'95. The Pacific Rim Conference on Lasers and Electro-Optics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::656a2f0e319dd79aae9be4dc5c1a63eb
https://doi.org/10.1109/cleopr.1995.527219
https://doi.org/10.1109/cleopr.1995.527219