Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Tsukasa Motoya"'
Publikováno v:
Journal of Surface Analysis. 24:56-60
Autor:
Shigetoshi Sugawa, Kazumasa Kawase, Tomoyuki Suwa, Hiroaki Tanaka, Akinobu Teramoto, Tetsuya Goto, Tsukasa Motoya, Rihito Kuroda
Publikováno v:
ECS Journal of Solid State Science and Technology. 5:P608-P613
Autor:
Yasushi Uehara, Teruaki Hayakawa, Tsukasa Motoya, Rina Maeda, Hideharu Nobutoki, Kenta Okuhara, Akihiro Nakamura
Publikováno v:
Chemistry Letters. 45:795-797
We report the investigation of the mesophase transformations of a liquid crystalline molecule with terminal epoxy groups from the initial stages of curing with a diamine compound. The ordered arrangement of molecules within the smectic layers in the
Autor:
Tomoyuki Suwa, Tadahiro Ohmi, Tsukasa Motoya, Akinobu Teramoto, Hiroaki Tanaka, Shigetoshi Sugawa
Publikováno v:
ECS Transactions. 61:47-53
I. Introduction In order to reduce source/drain parasitic resistance (RSD) in LSIs, it is essential to reduce contact resistance (Rc) [1, 2]. As the Schottky barrier height (SBH) between silicide and silicon must be low to achieve low contact resisti
Publikováno v:
Physical Review B. 75
The surface phonon dispersion was investigated by high-resolution electron-energy-loss spectroscopy on the deuterium-terminated $\mathrm{Si}(111)\text{\ensuremath{-}}(1\ifmmode\times\else\texttimes\fi{}1)$ prepared by an improved wet chemical method.
Autor:
Shigetoshi Sugawa, Keiichi Hashimoto, Tsukasa Motoya, Masaki Hirayama, Akinobu Teramoto, Tomoyuki Suwa, Tadahiro Ohmi, Yukihisa Nakao
Publikováno v:
ECS Meeting Abstracts. :1378-1378
1. Introduction High quality silicon nitride films (SiNx) formed at low temperature is strongly required because new materials such as Ge, high-k gate dielectrics, gate electrodes metals, etc. are introduced in advanced integrated circuit[1, 2]. The
Autor:
Tomoyuki Suwa, Tsukasa Motoya, Kazumasa Kawase, Akinobu Teramoto, Tadahiro Ohmi, Yasushi Uehara
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 32:051502
Silicon dioxide (SiO2) films formed by chemical vapor deposition (CVD) have been treated with Ar plasma excited by microwave. The changes of the mass densities, carrier trap densities, and thicknesses of the CVD-SiO2 films with the Ar plasma treatmen
Effect of Composition Rate on Erbium Silicide Work Function on Different Silicon Surface Orientation
Publikováno v:
ECS Meeting Abstracts. :773-773
Electrical and physical properties of ErSix on n-type Si(100) (111) and (551) surfaces are reported. The ErSix density affects the work function of ErSix. A controlling the composition ratio of Er and Si is a key parameter for a reducing contact resi
Publikováno v:
ECS Meeting Abstracts. :272-272
not Available.
Autor:
Kiichi Yoshiara, Yasunori Tokuda, Tsukasa Motoya, Muneyoshi Suita, Yosuke Suzuki, Katsuomi Shiozawa, Yuji Abe, Akihumi Imai, Toshiyuki Oishi, Eiji Yagyu, Takuma Nanjo
Publikováno v:
Japanese Journal of Applied Physics. 50:064101
In AlGaN/GaN high-electron-mobility transistors (HEMTs) with an AlN spacer layer, which improves two-dimensional electron gas (2DEG) properties, it is important to decrease ohmic contact resistance because an AlN spacer layer with an extremely wide b