Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Tsukasa Miura"'
Publikováno v:
Annals of nuclear medicine. 36(1)
Preclinical and non-medicinal interventions are essential for preventing and treating cognitive decline in patients with mild cognitive impairment (MCI). Whole-body vibration (WBV) exercise is conducted on a platform that generates vertical sinusoida
Autor:
Shinya Miyata, Ryo Hayashibara, Masahiko Nakamizo, Tadayuki Taura, Keiji Tatani, Yusuke Oike, Hirotsugu Takahashi, Satoshi Yamamoto, Naoki Jyo, Yasuhisa Tochigi, Takayuki Ezaki, Takuya Wada, Masaki Sakakibara, Ogawa Koji, Hidekazu Kikuchi, Yoshiyuki Ota, Katsumi Honda, Tsukasa Miura, Yasunobu Kamikubo, Shin Sakai, Teruo Hirayama
Publikováno v:
IEEE Journal of Solid-State Circuits. 53:3017-3025
In this paper, we report on a back-illuminated, global shutter, CMOS image sensor (CIS) with a pixel-parallel, single-slope analog-to-digital converter (ADC). We adopted a digital bucket relay transfer with multistage flip-flop connection, a pixel un
Autor:
Tsukasa Miura, Masaki Sakakibara, Tadayuki Taura, Yusuke Oike, Keiji Tatani, Takayuki Ezaki, Hirotsugu Takahashi
Publikováno v:
3DIC
In this paper, we propose a 3D stacked global shutter CMOS image sensor with 3M Cu-Cu connections. Using a fine pitch and a large number of Cu-Cu connection technology, we achieved 1.46M pixels of size 6.9 μm × 6.9 μm. The pixel evaluation results
Autor:
Teruo Hirayama, Naoki Jyo, Tadayuki Taura, Yusuke Oike, Masahiko Nakamizo, Satoshi Yamamoto, Yasuhisa Tochigi, Yoshiyuki Ota, Ryo Hayashibara, Keiji Tatani, Ogawa Koji, Hirotsugu Takahashi, Katsumi Honda, Hidekazu Kikuchi, Shinya Miyata, Takayuki Ezaki, Takashi Nagano, Yasunobu Kamikubo, Shin Sakai, Takuya Wada, Yohei Furukawa, Tsukasa Miura, Masaki Sakakibara
Publikováno v:
ISSCC
Rolling-shutter CMOS image sensors (CISs) are widely used [1,2]. However, the distortion of moving subjects remains an unresolved problem, regardless of the speed at which these sensors are operated. It has been reported that by adopting in-pixel ana
Publikováno v:
J. Cryst, Growth. 298
A new heterojunction bipolar transistor (HBT) structure with buried SiO 2 wires is proposed. SiO 2 wires were buried in the InP layer by metalorganic vapor-phase epitaxy (MOVPE). The insertion of SiO 2 wires under the base electrodes reduces collecto