Zobrazeno 1 - 10
of 168
pro vyhledávání: '"Tsukamoto Shiro"'
Autor:
Toujyou Takashi, Tsukamoto Shiro
Publikováno v:
Nanoscale Research Letters, Vol 5, Iss 12, Pp 1930-1934 (2010)
Abstract Site-controlled InAs nano dots were successfully fabricated by a STMBE system (in situ scanning tunneling microscopy during molecular beam epitaxy growth) at substrate temperatures from 50 to 430°C. After 1.5 ML of the InAs wetting layer (W
Externí odkaz:
https://doaj.org/article/b2ebce092abb49428a64c5f71d716d34
Autor:
Konishi Tomoya, Tsukamoto Shiro
Publikováno v:
Nanoscale Research Letters, Vol 5, Iss 12, Pp 1901-1904 (2010)
Abstract Surface of an InAs wetting layer on GaAs(001) preceding InAs quantum dot (QD) formation was observed at 300°C with in situ scanning tunneling microscopy (STM). Domains of (1 × 3)/(2 × 3) and (2 × 4) surface reconstructions were located i
Externí odkaz:
https://doaj.org/article/abaf0f6ffbff446fae8cc148d69ee695
Autor:
Cesura, Federico, Vichi, Stefano, Tuktamyshev, Artur, Bietti, Sergio, Fedorov, Alexey, Sanguinetti, Stefano, Iizuka, Kanji, Tsukamoto, Shiro
Publikováno v:
In Journal of Crystal Growth 15 March 2024 630
Autor:
Tuktamyshev, Artur, Fedorov, Alexey, Bietti, Sergio, Tsukamoto, Shiro, Bergamaschini, Roberto, Montalenti, Francesco, Sanguinetti, Stefano
We show that the density of indium islands on GaAs(111)A substrates have a non-monotonic, reentrant behavior as a function of the indium deposition temperature. The expected increase in the density with decreasing temperature, indeed, is observed onl
Externí odkaz:
http://arxiv.org/abs/2007.03382
Autor:
Azadmand, Mani, Vichi, Stefano, Bietti, Sergio, Chrastina, Daniel, Bonera, Emiliano, Acciarri, Maurizio, Fedorov, Alexey, Tsukamoto, Shiro, Nötzel, Richard, Sanguinetti, Stefano
We investigate effects of metal droplets on the In incorporation in InGaN epilayers grown at low temperature (450 C) by plasma assisted molecular beam epitaxy. We find a strong reduction of the In incorporation when the surface is covered by metal dr
Externí odkaz:
http://arxiv.org/abs/1907.06939
Publikováno v:
In Surface Science March 2023 729
Flat metamorphic InAlAs buffer layer on GaAs(111)A misoriented substrates by growth kinetics control
Autor:
Tuktamyshev, Artur, Vichi, Stefano, Cesura, Federico, Fedorov, Alexey, Bietti, Sergio, Chrastina, Daniel, Tsukamoto, Shiro, Sanguinetti, Stefano
Publikováno v:
In Journal of Crystal Growth 15 December 2022 600
Autor:
Azadmand, Mani, Barabani, Luca, Bietti, Sergio, Chrastina, Daniel, Bonera, Emiliano, Acciarri, Maurizio, Fedorov, Alexey, Tsukamoto, Shiro, Nötzel, Richard, Sanguinetti, Stefano
We investigate the effect of the formation of metal droplets on the growth dynamics of InGaN by Plasma-Assisted Molecular Beam Epitaxy (PAMBE) at low temperatures (T = 450{\deg}C). We find that the presence of droplets on the growth surface strongly
Externí odkaz:
http://arxiv.org/abs/1711.10714
Publikováno v:
In Journal of Crystal Growth 1 December 2020 551
Autor:
Konishi, Tomoya, Tsukamoto, Shiro
We perform spatial point analysis of InAs quantum dot nucleation sites and surface reconstruction domain pattern on an InAs wetting layer, giving insights for quantum dot nucleation mechanism. An InAs wetting layer grown to 1.5 monolayers in thicknes
Externí odkaz:
http://arxiv.org/abs/1007.4246