Regulating electron diffraction direction with cylindrically symmetric rotating crystal

Autor: Cheng, L., Da, B., Liu, X., Shigeto, K., Tsukagoshi, K., Nabatame, T., Liu, J. W., Zhang, H., Yoshikawa, H., Tanuma, S., Gao, Z. S., Guo, H. X., Sun, Y., Hu, J., Ding, Z. J.

We report a promising InSiO film that allows simultaneous observation of sample morphology and Kikuchi patterns in raster scan mode of scanning electron microscopy. This new experimental observation suggests potential mechanism beyond existing diffra

Externí odkaz: http://arxiv.org/abs/2211.07144

Development of a HPLC system using a phase-separation multiphase flow as an eluent: an influence of column pressure on phase separation and chromatogram at room temperature.

Autor: Takagi K; Applied Chemistry, Graduate School of Science and Engineering, Doshisha University, Kyotanabe, 610-0321, Japan., Iharada T; Applied Chemistry, Graduate School of Science and Engineering, Doshisha University, Kyotanabe, 610-0321, Japan., Tsukagoshi K; Applied Chemistry, Graduate School of Science and Engineering, Doshisha University, Kyotanabe, 610-0321, Japan. ktsukago@mail.doshisha.ac.jp.

Publikováno v: Analytical sciences : the international journal of the Japan Society for Analytical Chemistry [Anal Sci] 2024 Nov; Vol. 40 (11), pp. 2081-2087. Date of Electronic Publication: 2024 Jul 30.

Finite-Area Membrane Metasurfaces for Enhancing Light-Matter Coupling in Monolayer Transition Metal Dichalcogenides.

Autor: Ho YL; Research Center for Electronic and Optical Materials, National Institute for Materials Science (NIMS), 1-1 Namiki Tsukuba, Ibaraki 305-0044, Japan., Fong CF; Nanoscale Quantum Photonics Laboratory, RIKEN Cluster for Pioneering Research, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan., Wu YJ; Center for Basic Research on Materials, National Institute for Materials Science (NIMS), 1-2-1 Sengen Tsukuba, Ibaraki 305-0047, Japan., Konishi K; Institute for Photon Science and Technology, The University of Tokyo, 7-3-1 Hongo Bunkyo, Tokyo 113-0033, Japan., Deng CZ; Institute for Photon Science and Technology, The University of Tokyo, 7-3-1 Hongo Bunkyo, Tokyo 113-0033, Japan., Fu JH; Department of Chemical System Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo Bunkyo, Tokyo 113-8656, Japan., Kato YK; Nanoscale Quantum Photonics Laboratory, RIKEN Cluster for Pioneering Research, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan.; Quantum Optoelectronics Research Team, RIKEN Center for Advanced Photonics, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan., Tsukagoshi K; Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki Tsukuba, Ibaraki 305-0044, Japan., Tung V; Department of Chemical System Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo Bunkyo, Tokyo 113-8656, Japan., Chen CW; Department of Materials Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Rd., Taipei 10617, Taiwan.; Center for Condensed Matter Sciences and Center of Atomic Initiative for New Materials (AI-MAT), National Taiwan University, No. 1, Sec. 4, Roosevelt Rd., Taipei 10617, Taiwan.

Publikováno v: ACS nano [ACS Nano] 2024 Sep 03; Vol. 18 (35), pp. 24173-24181. Date of Electronic Publication: 2024 Aug 21.

Thickness Scaling Effect on Interfacial Barrier and Electrical Contact to Two-Dimensional MoS2 Layers

Autor: Li, Song-Lin, Komatsu, K., Nakaharai, Shu, Lin, Yen-Fu, Yamamoto, M., Duan, X. F., Tsukagoshi, K.

Publikováno v: ACS Nano, 8 (2014) 12836-12842

Understanding the interfacial electrical properties between metallic electrodes and low dimensional semiconductors is essential for both fundamental science and practical applications. Here we report the observation of thickness reduction induced cro

Externí odkaz: http://arxiv.org/abs/1410.1943

Hall effect of quasi-hole gas in organic single-crystal transistors

Autor: Takeya, J., Tsukagoshi, K., Aoyagi, Y., Takenobu, T., Iwasa, Y.

Publikováno v: Jap. J. Appl. Phys. Vol. 44, No. 46, 2005, pp. L1393-L1396

Hall effect is detected in organic field-effect transistors, using appropriately shaped rubrene (C42H28) single crystals. It turned out that inverse Hall coefficient, having a positive sign, is close to the amount of electric-field induced charge upo

Externí odkaz: http://arxiv.org/abs/cond-mat/0511188