Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Tsuguyasu Hatsuda"'
Autor:
Tetsuzo Ueda, Yasuhiro Yamada, Hiroaki Ueno, Kenichi Asanuma, Hidetoshi Ishida, Fumito Kusama, Tsuguyasu Hatsuda, Yusuke Kinoshita, Hidekazu Umeda
Publikováno v:
2018 IEEE Applied Power Electronics Conference and Exposition (APEC).
Highly efficient three-phase to three-phase matrix converters using Gallium nitride (GaN) bidirectional switches with both high current and high breakdown voltage are demonstrated. The GaN switch with dual gates works as a bidirectional switch by a s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91e65da50f66c57f785861de06ce5096
https://doi.org/10.1109/apec.2018.8341119
https://doi.org/10.1109/apec.2018.8341119
Autor:
Masahiro Ogawa, Tsuguyasu Hatsuda, Ryo Kajitani, Satoshi Tamura, Kenichiro Tanaka, Daisuke Shibata, Nanako Shiozaki, Hiroyuki Handa, Tetsuzo Ueda, Shinji Ujita, Masahiro Ishida
Publikováno v:
Gallium Nitride Materials and Devices XIII.
We propose a normally-off vertical GaN-based transistor on a bulk GaN substrate with low specific on-state resistance of 1.0 mΩ·cm2 and high off-state breakdown voltage of 1.7 kV. P-GaN/AlGaN/GaN triple layers are epitaxially regrown over V-shaped
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f08456becca1230d8e3ddb2e5a75193
https://doi.org/10.1117/12.2287297
https://doi.org/10.1117/12.2287297
Autor:
Takahiro Yamada, Tsuguyasu Hatsuda, Hong-An Shih, Heiji Watanabe, Tetsuzo Ueda, Tamotsu Hashizume, Takuji Hosoi, Yoshiharu Anda, Mikito Nozaki, Naohiro Tsurumi, Takayoshi Shimura, Satoshi Nakazawa
Publikováno v:
2017 IEEE International Electron Devices Meeting (IEDM).
In this paper, high current and high voltage AlGaN/GaN metal-insulator-semiconductor (MIS) heterojunction field-effect transistors (HFETs) on Si are demonstrated. The devices exhibit a drain current of 20 A as well as a breakdown voltage of 730 V, se
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fa82068b28be2d02d9be8f330401571
https://doi.org/10.1109/iedm.2017.8268455
https://doi.org/10.1109/iedm.2017.8268455
Autor:
Shuichi Nagai, Tsuguyasu Hatsuda, Osamu Tabata, Yasufumi Kawai, Songbek Che, Shingo Enomoto, Noboru Negoro, Yoshiharu Anda
Publikováno v:
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).
Fast switching operation of power electronics systems is significantly advantageous for reducing volume of passive components and increasing power density in the systems. Next generation power devices, such as GaN gate-injection transistor (GIT), are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af17c509449b52caecebd07ad0f44488
https://doi.org/10.23919/ispsd.2017.7988876
https://doi.org/10.23919/ispsd.2017.7988876
Autor:
Kenichiro Tanaka, Tetsuzo Ueda, Tatsuo Morita, Tsuguyasu Hatsuda, Masahiro Ishida, Masahiro Toki, Masahiro Hikita, Ayanori Ikoshi, Kazuki Yokoyama, Yasuhiro Uemoto, Manabu Yanagihara
Publikováno v:
2017 IEEE International Reliability Physics Symposium (IRPS).
Reliability tests on 600V-rated GaN-based normally-off hybrid-drain-embedded Gate Injection Transistor (HD-GIT) are performed. High-temperature reverse-bias test on HD-GIT reveals that the lifetime is dependent on the leakage current before the relia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ec0fb458dcfbd5b478782126e5cbf61
https://doi.org/10.1109/irps.2017.7936308
https://doi.org/10.1109/irps.2017.7936308
Autor:
Yoshiharu Anda, Tsunenobu Kimoto, Hong-An Shih, Naohiro Tsurumi, Tsuguyasu Hatsuda, Tetsuzo Ueda, Tamotsu Hashizume, Satoshi Nakazawa
Publikováno v:
Japanese Journal of Applied Physics. 58:030902
In this paper, we investigated the effects of the post-deposition annealing (PDA) on the threshold voltage (V th) of AlGaN/GaN MOS heterojunction field-effect transistors with atomic-layer-deposited Al2O3 using H2O vapor or oxygen plasma as the oxida
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bf9768977b2b718837453bc1031e9eb
https://doi.org/10.7567/1347-4065/aafd17
https://doi.org/10.7567/1347-4065/aafd17
Autor:
Tsuguyasu Hatsuda, Masahiro Ishida, Masahiro Ogawa, Kenichiro Tanaka, Satoshi Tamura, Ryo Kajitani, Daisuke Shibata, Tetsuzo Ueda
Publikováno v:
2016 IEEE International Electron Devices Meeting (IEDM).
A normally-off vertical GaN-based transistor on a bulk GaN substrate with low specific on-state resistance of 1.0 mΩ·cm2 and high off-state breakdown voltage of 1.7 kV is presented. P-GaN/AlGaN/GaN triple layers are epitaxially regrown over V-shape
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab0aa7e371e412fa11f59ab7aabf304b
https://doi.org/10.1109/iedm.2016.7838385
https://doi.org/10.1109/iedm.2016.7838385
Autor:
Satoshi Tamura, Nanako Shiozaki, Tetsuzo Ueda, Tsuguyasu Hatsuda, Kenichiro Tanaka, Ryo Kajitani, Masahiro Ogawa, Shinji Ujita, Hiroyuki Handa, Hidekazu Umeda, Masahiro Ishida, Daisuke Shibata
Publikováno v:
2016 IEEE International Electron Devices Meeting (IEDM).
GaN-based normally-off Gate Injection Transistors (GITs) with p-type gate over AlGaN/GaN heterojunction are fabricated on bulk GaN substrates. Thickness of insulating GaN buffer layer is increased up to 16 μm for the presented device from 5 μm for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd7264b3ba379b13c870d4cd6a6827d4
https://doi.org/10.1109/iedm.2016.7838387
https://doi.org/10.1109/iedm.2016.7838387
Autor:
Daisuke Shibata, Ryo Kajitani, Hiroyuki Handa, Nanako Shiozaki, Shinji Ujita, Masahiro Ogawa, Kenichiro Tanaka, Satoshi Tamura, Tsuguyasu Hatsuda, Masahiro Ishida, Tetsuzo Ueda
Publikováno v:
Proceedings of SPIE; 11/4/2017, Vol. 10532, p1-8, 8p
Autor:
Satoshi Nakazawa, Hong-An Shih, Naohiro Tsurumi, Yoshiharu Anda, Tsuguyasu Hatsuda, Tetsuzo Ueda, Tsunenobu Kimoto, Tamotsu Hashizume
Publikováno v:
Japanese Journal of Applied Physics; 3/1/2019, Vol. 58 Issue 3, p1-1, 1p