Zobrazeno 1 - 10
of 88
pro vyhledávání: '"Tsugunori Okumura"'
Autor:
Tsugunori Okumura
Publikováno v:
Defects in Optoelectronic Materials ISBN: 9780367811297
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61225c78bb618546bf7691c4c714f05b
https://doi.org/10.1201/9780367811297-7
https://doi.org/10.1201/9780367811297-7
Publikováno v:
Thin Solid Films. 557:212-215
We investigated the electrical characteristics of an AlGaN/GaN heterostructure exposed to Ar plasma. In the near-surface region of the AlGaN/GaN heterostructure, we found that plasma-induced defects reduced the two-dimensional electron gas (2DEG) den
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d8a3035276fb5131f334813a4057e93
https://doi.org/10.1016/j.tsf.2013.10.086
https://doi.org/10.1016/j.tsf.2013.10.086
Publikováno v:
IEICE Transactions on Electronics. :269-274
We identify a broadband equivalent circuit of an on-chip self-complementary antenna integrated with a µm-sized semiconductor mesa structure whose circuit elements can be interpreted by using closed-form analysis. Prior to the equivalent circuit anal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fcb4001840115f10129de64ffe333535
https://doi.org/10.1587/transele.e92.c.269
https://doi.org/10.1587/transele.e92.c.269
Publikováno v:
Japanese Journal of Applied Physics. 47:6208-6213
We have developed a model of the stress-induced leakage current (SILC) based on the inelastic trap-assisted tunneling (ITAT) by introducing a trap with a deep energy level of 3.6 eV from the bottom of the conduction band. This model can explain both
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::daa74a6aab4c478b862a7f6e5ec21dbf
https://doi.org/10.1143/jjap.47.6208
https://doi.org/10.1143/jjap.47.6208
Publikováno v:
Japanese Journal of Applied Physics. 47:5304-5308
We have developed a new model for the leakage current of a single tail bit of dynamic random access memories (DRAMs). This model can explain the leakage current of each tail bit quantitatively. To derive model equations, we assume that some bits cont
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c8e4291fb0b867313a03bfde209bdb3
https://doi.org/10.1143/jjap.47.5304
https://doi.org/10.1143/jjap.47.5304
Publikováno v:
IEICE Transactions on Electronics. :1070-1075
Monolithic gyrators are proposed on the basis of integrating resonant tunneling diodes (RTDs) and HEMT toward realization of broadband and high-Q passives. Feasibility of millimeter-wave active inductors using the gyrator are described with equivalen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36d0c0af8114a55639d25fcfcbce9b1b
https://doi.org/10.1093/ietele/e91-c.7.1070
https://doi.org/10.1093/ietele/e91-c.7.1070
Publikováno v:
physica status solidi c. 4:2581-2584
The behavior of plasma-induced defects deactivating Si donors in GaN has been studied by using Schottky diodes with the UV illumination. It is interesting that the UV irradiating for the deactivated GaN leads to an enhancement of reactivation of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::520af81b951573e38bea5f7a68b85efa
https://doi.org/10.1002/pssc.200674792
https://doi.org/10.1002/pssc.200674792
Publikováno v:
Japanese Journal of Applied Physics. 45:5504-5508
Towards an application for the mesa etching process of semiconductor quantum devices, a saddle-field argon fast atom beam (FAB) source was characterized in terms of energy distribution spectra for residual ions and neutralization coefficient under va
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::825aa13ec34f359d4c18318d04288f27
https://doi.org/10.1143/jjap.45.5504
https://doi.org/10.1143/jjap.45.5504
Publikováno v:
Applied Surface Science. 216:113-118
Electronic properties of the surface as well as the interface of silicon-on-insulator (SOI) materials have been characterized by the Kelvin method combined with surface photovoltage (SPV) measurements. In order to separate the interface properties fr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8031dc690c3e2b8a4bdbf9743e53a45
https://doi.org/10.1016/s0169-4332(03)00493-8
https://doi.org/10.1016/s0169-4332(03)00493-8
Publikováno v:
Applied Surface Science. 216:413-418
GaInP/GaAs triple barrier resonant tunneling diodes (TBRTDs) grown by metal organic chemical vapor deposition were fabricated. Temperature dependence of current–voltage characteristics was measured from 18.6 to 294.1 K and negative differential res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f448f28cc96526bd4bcb66e6dca07f3c
https://doi.org/10.1016/s0169-4332(03)00384-2
https://doi.org/10.1016/s0169-4332(03)00384-2