Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Tsubasa Imamura"'
Publikováno v:
Japanese Journal of Applied Physics. 60:036001
The present study investigates the cyclic etching of TiO2 with CF polymer deposition and removal. We find that C4F8 plasma treatment forms a CF polymer deposition layer on the TiO2 and a modified TiO2 surface under the CF polymer layer. Subsequent O2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25b51ab9990575f30f074888a3e56dee
https://doi.org/10.35848/1347-4065/abdf78
https://doi.org/10.35848/1347-4065/abdf78
Autor:
Masahiro Kanno, Hiroki Yonemitsu, Mitsuhiro Omura, Hironobu Sato, Ayako Kawanishi, Tsukasa Azuma, Yuriko Seino, Tsubasa Imamura, Naofumi Nakamura, Hirokazu Kato, Katsutoshi Kobayashi
Publikováno v:
Journal of Photopolymer Science and Technology. 27:7-10
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::faaf52dc24feee92d79bd705dd05161f
https://doi.org/10.2494/photopolymer.27.7
https://doi.org/10.2494/photopolymer.27.7
Autor:
Naofumi Nakamura, Hirokazu Kato, Hironobu Sato, Katsutoshi Kobayashi, Tsubasa Imamura, Yuriko Seino, Hiroki Yonemitsu, Ayako Kawanishi, Masahiro Kanno, Tsukasa Azuma, Mitsuhiro Omura
Publikováno v:
Microelectronic Engineering. 110:152-155
In this study, sub-30nm via interconnects were fabricated and fully integrated on a 300mm wafer using directed self-assembly lithography (DSAL). They were tested electrically and initial test results are reported. DSAL was applied on the via layer, w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53f5115333b82736bdf8c8690bb59dde
https://doi.org/10.1016/j.mee.2013.03.025
https://doi.org/10.1016/j.mee.2013.03.025
Autor:
Tsubasa Imamura, Tsukasa Azuma, Hiroki Yonemitsu, Yuriko Seino, Mitsuhiro Omura, Masahiro Kanno, Naofumi Nakamura, Katsutoshi Kobayashi, Hirokazu Kato, Ayako Kawanishi, Hironobu Sato
Publikováno v:
Journal of Photopolymer Science and Technology. 26:21-26
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d28bb7c4d7ee76345d76792ce0c958a9
https://doi.org/10.2494/photopolymer.26.21
https://doi.org/10.2494/photopolymer.26.21
Autor:
Mitsuhiro Omura, Suigen Kyoh, Yumi Nakajima, Kentaro Matsunaga, Shinya Watanabe, Toshiyuki Sasaki, Tsubasa Imamura, Kazuo Tawarayama
Publikováno v:
Journal of Photopolymer Science and Technology. 24:19-23
EUVL applicability to mass production in 2x nm generations has been proved by recent developments. For 1x nm generations, three major lithography candidates to be applied for mass productions are discussed, quadruple patterning, EUVL single patternin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef660e276ccd90df7f84a884b43f0c58
https://doi.org/10.2494/photopolymer.24.19
https://doi.org/10.2494/photopolymer.24.19
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35:062201
CO2 plasma has advantages over O2 and N2/H2 plasma in low damage resist ashing processes for porous SiOCH films. To understand why CO2 plasma has advantages, the authors investigated the damage mechanisms in O2, N2/H2, and CO2 plasma using 100 MHz/13
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe5d2e37d5be50b05daceb82ce64d0b9
https://doi.org/10.1116/1.4987020
https://doi.org/10.1116/1.4987020
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 33:061601
The directed self-assembly lithography process using polystyrene (PS)-block-poly(methyl methacrylate) (PMMA) requires selective removal of PMMA, which is called the development process. The development process using plasma etching (dry development) w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34b59d6c56e8b9b9811cae531b72e409
https://doi.org/10.1116/1.4932541
https://doi.org/10.1116/1.4932541
Publikováno v:
Journal of Micro/Nanolithography, MEMS, and MOEMS. 14:044505
A dry development, directed self-assembly lithography (DSAL) hole-shrink process was studied, with a focus on the selectivity of the etching of poly(methyl methacrylate) (PMMA) over polystyrene (PS), and the suppression of etch stop. The highly selec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bd7e676a2a38163b76cb56b73d3293c
https://doi.org/10.1117/1.jmm.14.4.044505
https://doi.org/10.1117/1.jmm.14.4.044505
Publikováno v:
Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics; Nov2017, Vol. 35 Issue 6, p1-7, 7p
Publikováno v:
Japanese Journal of Applied Physics. 53:03DD03
The selective etching of poly(methyl methacrylate) (PMMA) in a block copolymer was studied with a focus on the material structures of polystyrene (PS) and PMMA. Based on our predictions, we investigated the effect of ion bombardment and designed a ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2482eea86bd2909759fcfcf63c2f580b
https://doi.org/10.7567/jjap.53.03dd03
https://doi.org/10.7567/jjap.53.03dd03