Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Tsu Hsiu Perng"'
Publikováno v:
Thin Solid Films. :345-349
Metal–insulator–metal (MIM) capacitors with high-k HfO2 dielectrics were fabricated and investigated. Experimental results show low leakage current densities of ∼5×10−9 A/cm2 and high capacitance density of ∼3.4 fF/μm2 at 100 kHz in the M
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::651798dd3b689e0b282244f327f7456c
https://doi.org/10.1016/j.tsf.2004.08.148
https://doi.org/10.1016/j.tsf.2004.08.148
Autor:
Ming-Jui Yang, Peer Lehnen, Tiao-Yuan Huang, Chao-Hsin Chien, Tsu-Hsiu Perng, Chun-Yen Chang, Ching-Wei Chen
Publikováno v:
IEEE Electron Device Letters. 25:784-786
Metal-insulator-semiconductor capacitors were fabricated using atomic vapor deposition HfO/sub 2/ dielectric with sputtered copper (Cu) and aluminum (Al) gate electrodes. The counterparts with SiO/sub 2/ dielectric were also fabricated for comparison
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11906a387c74446a29624a3cc8a58dfd
https://doi.org/10.1109/led.2004.839221
https://doi.org/10.1109/led.2004.839221
Autor:
Chun-Yen Chang, Tiao-Yuan Huang, Chao-Hsin Chien, Tsu-Hsiu Perng, Ching-Wei Chen, Horng-Chih Lin
Publikováno v:
IEEE Electron Device Letters. 24:333-335
The degradation induced by substrate hot electron (SHE) injection in 0.13-/spl mu/m nMOSFETs with ultrathin (/spl sim/2.0 nm) plasma nitrided gate dielectric was studied. Compared to the conventional thermal oxide, the ultrathin nitrided gate dielect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b54fe49324b9fba1f477e6c4297c3ec8
https://doi.org/10.1109/led.2003.812556
https://doi.org/10.1109/led.2003.812556
Autor:
Chia-Cheng Ho, Liang-Gi Yao, Tsu-Hsiu Perng, Chia-Pin Lin, Chu-Yun Fu, Chia-Feng Hu, Chih-Hao Chang, Chia-Cheng Chen, Ta-Ming Kuan, Hun-Jan Tao, Ting-Chu Ko, Shyue-Shyh Lin, Shih-Ting Hung, Neng-Kuo Chen, Chen Tzu-Chiang, Ching-Yu Chan, Hong-Nien Lin, Ming-Feng Shieh, Hsien-Chin Lin, Clement Hsingjen Wann, Tsung-Lin Lee, Shu-Ting Yang, M. Cao, Chih-Chieh Yeh, H. C. Lin, Jeff J. Xu, Shih-Cheng Chen, Chih-Sheng Chang, Li-Shyue Lai, Jyh-Cheng Sheu, Wei-Hsiung Tseng, Feng Yuan, C.H. Chang
Publikováno v:
2010 International Electron Devices Meeting.
We show that FinFET, a leading transistor architecture candidate of choice for high performance CPU applications [1–3], can also be extended for general purpose SoC applications by proper device optimization. We demonstrate superior, best-in-its-cl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71e100479e1546404055154726f5e6d8
https://doi.org/10.1109/iedm.2010.5703473
https://doi.org/10.1109/iedm.2010.5703473
Autor:
Tsu-Hsiu Perng, 彭辭修
93
The degradation induced by channel hot electron (CHE) and substrate hot electron (SHE) injection in nMOSFETs with ultrathin plasma nitrided gate dielectric was studied in this thesis. Compared to the conventional thermal oxide, the ultrathin
The degradation induced by channel hot electron (CHE) and substrate hot electron (SHE) injection in nMOSFETs with ultrathin plasma nitrided gate dielectric was studied in this thesis. Compared to the conventional thermal oxide, the ultrathin
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/16163179669846707656
Autor:
Yi Cheng Chen, Tsu-Hsiu Perng, Chun-Yen Chang, Da-Yuan Lee, Horng-Chich Lin, Chao-Hsin Chien, Ching-Wei Chen, Tiao-Yuan Huang, Shih-Chich Ou
Publikováno v:
Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765).
Although nitrogen incorporation into ultra-thin gate dielectrics could reduce gate leakage current effectively, in this study we found that nitrogen-induced paramagnetic electron trap precursors will enhance hot-electron-induced degradation in deep s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5cc9b20992f32ede387d446ee5f96254
https://doi.org/10.1109/iwgi.2003.159183
https://doi.org/10.1109/iwgi.2003.159183
Autor:
Tsu-Hsiu Perng, 彭辭修
87
Interconnect delay is a performance-liming factor for ULSI circuits when feature size is scaled into the deep sub-micron region. Using low dielectric constant material for the interlayer insulator is an effective way to solve the problem. We
Interconnect delay is a performance-liming factor for ULSI circuits when feature size is scaled into the deep sub-micron region. Using low dielectric constant material for the interlayer insulator is an effective way to solve the problem. We
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/11297947065504302295
Autor:
Peer Lehnen, Chun-Yen Chang, Bing-Yue Tsui, Ming Jui Yang, Chao-Hsin Chien, Ching Wei Chen, Jann Shyang Liang, Tsu Hsiu Perng
Publikováno v:
Japanese Journal of Applied Physics. 44:87
We have investigated the effects that various pre-deposition surface treatments, such as HF dipping (HF-dipped), NH3 surface nitridation (NH3-annealed), and rapid thermal oxidation (RTO-treated), have on the electrical properties of HfO2 gate dielect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bf33ddec2e6e0cabb9c0698c6e689ac
https://doi.org/10.1143/jjap.44.87
https://doi.org/10.1143/jjap.44.87
Publikováno v:
Electrochemical and Solid-State Letters. 8:G187
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e8a8389ad877c374e8390195c3fd805
https://doi.org/10.1149/1.1938851
https://doi.org/10.1149/1.1938851
Autor:
Ching-Wei Chen, Chao-Hsin Chien, Shih-Chich Ou, Tsu-Hsiu Perng, Da-Yuan Lee, Yi-Cheng Chen, Horng-Chich Lin, Tiao-Yuan Huang, Chun-Yen Chang
Publikováno v:
Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765); 2003, p54-57, 4p