Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Tso-Min Chou"'
Autor:
Haosen Tan, Weida Zhang, Yudong Chen, Yuhe Xia, Chris Newey, Tso-Min Chou, Nai-Hsiang Sun, Jerome K. Butler, Gary A. Evans
Publikováno v:
IEEE Photonics Journal, Vol 14, Iss 6, Pp 1-10 (2022)
A simple thin film effective index analysis for first-order gratings in Si photonic waveguides is shown to provide highly accurate results for reflected and transmitted power spectrums as long as the waveguide remains single mode and non-radiating. A
Externí odkaz:
https://doaj.org/article/f109c095828c461c89785ad76fac35a1
Autor:
Haosen Tan, Weida Zhang, Yudong Chen, Yuhe Xia, Chris Newey, Tso-Min Chou, Nai-Hsiang Sun, Jerome K. Butler, Gary A. Evans
Publikováno v:
IEEE Photonics Journal, Vol 15, Iss 5, Pp 1-2 (2023)
We report errors in Table III of (Tan et al. 2022) that requires changing the text discussions in four places. These errors, due to using an incorrect thickness for the middle layer of a three-layer waveguide in an analytic formula (Huang et al., 201
Externí odkaz:
https://doaj.org/article/7b9aa45be9164e17987e2d5bab001ec2
Publikováno v:
IEEE Transactions on Electron Devices. 56:2895-2901
In this paper, a simple and reliable method to estimate the channel temperature of GaN high-electron mobility transistors (HEMTs) is proposed. The technique is based on electrical measurements of performance-related figures of merit (I Dmax and R ON)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa1da7c7c35284edc9ebcc71ea282570
https://doi.org/10.1109/ted.2009.2032614
https://doi.org/10.1109/ted.2009.2032614
Autor:
Hua-Quen Tserng, Jun Ren, Edward Beam, Huili Grace Xing, Manyam Pilla, Andrew Ketterson, Paul Saunier, Bo Song, Tso-Min Chou, Patrick Fay, Shuoqi Chen, Xiang Gao
Publikováno v:
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b5d5884c40c07e9610304a589f1745f
https://doi.org/10.1109/csics.2014.6978570
https://doi.org/10.1109/csics.2014.6978570
Autor:
Deep C. Dumka, Tso-Min Chou
Publikováno v:
Fourteenth Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm).
Thermal assessment of AlGaN/GaN heterostructure on diamond substrate is presented. To emphasize the advantages of diamond substrate for GaN, results of test devices on GaN-on-Diamond material are compared to those on GaN-on-SiC and GaN-on-Si material
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f5919e4dbd5d6cb226a7e4348c75c39
https://doi.org/10.1109/itherm.2014.6892418
https://doi.org/10.1109/itherm.2014.6892418
Autor:
Tso-Min Chou, Jieh-Ping Sih, Gary A. Evans, Jerome K. Butler, A. Mantle, Jay B. Kirk, S.R. Selmic, David P. Bour
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 7:340-349
A comprehensive design method for long wavelength strained quantum-well lasers is applied to design uncooled multiple-quantum-well AlGaInAs-InP 1.3-/spl mu/m lasers for communication systems. The method includes multiband effective mass theory and el
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::478d87d9004fb19658adb6e2387b9b6c
https://doi.org/10.1109/2944.954148
https://doi.org/10.1109/2944.954148
Autor:
Mirko Bernardoni, Firooz Faili, Deep C. Dumka, Daniel Francis, Martin Kuball, Tso-Min Chou, Jose L. Jimenez, David M. Fanning, Felix Ejeckam, James W Pomeroy
Publikováno v:
2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
Thermal conductivity of the substrate affects the performance of high power RF devices. It is a dominant limiting factor in current state-of- the-art GaN HEMTs on SiC substrate. Due to high thermal conductivity, diamond substrate is an attractive alt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::451224d9261ff855453774c63e635510
https://doi.org/10.1109/csics.2013.6659225
https://doi.org/10.1109/csics.2013.6659225
Autor:
Jerome K. Butler, Gary A. Evans, Tso-Min Chou, Chia-Ming Hu, Jung-Sheng Chiang, Shih-Chiang Lin, Nai-Hsiang Sun, Ping-Hung Lin
Publikováno v:
2013 International Symposium on Next-Generation Electronics.
A novel double input DBR grating is presented in this paper. The length of the grating region and the phase difference of the inputs can determine the direction and the efficiency of the output power.th of the grating region and the phase difference
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef312bb2e27028a6c6ed9b6839ee63fe
https://doi.org/10.1109/isne.2013.6512293
https://doi.org/10.1109/isne.2013.6512293
Publikováno v:
2010 IEEE International Reliability Physics Symposium.
The accuracy of different thermography techniques for the determination of AlGaN/GaN HEMT channel temperature was investigated. Micro-Raman thermography, a novel electrical testing method, and IR thermography were applied to measure the temperature i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ed3189143f544bbd69b13862ee7a378
https://doi.org/10.1109/irps.2010.5488777
https://doi.org/10.1109/irps.2010.5488777
Publikováno v:
2007 ROCS Workshop[Reliability of Compound Semiconductors Digest].
A quick and reliable method to estimate the channel temperature of GaN high electron mobility transistors is extremely important in order to understand the physical degradation mechanisms as well as to extract a meaningful life time of the device. In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5cdce5156b4ee664c637c5031dd84024
https://doi.org/10.1109/rocs.2007.4391064
https://doi.org/10.1109/rocs.2007.4391064