Zobrazeno 1 - 10
of 54
pro vyhledávání: '"Tso, Yu"'
Publikováno v:
In Journal of Alloys and Compounds 25 November 2023 965
Autor:
Wang, Wei-Hung, Ramos, Raul, Tai, Kang-Yu, Wu, Yun-Shan, Chang, Tso-Yu, Yan, Jia-Yu, Plikus, Maksim V., Oh, Ji Won, Lin, Sung-Jan
Publikováno v:
In Journal of Investigative Dermatology September 2023 143(9):1638-1645
Publikováno v:
Actuators, Vol 11, Iss 4, p 104 (2022)
For solving the transformation problem between the desired nonlinear control laws and installed actuators’ input commands of torpedo-like underwater vehicles, one closed-form control allocation method is proposed in this article. The goal of this s
Externí odkaz:
https://doaj.org/article/862c47fc9fde44818f5092895c50190e
Autor:
CHENG, TSO-YU, 鄭作宇
107
Due to the rapid development of semiconductor technology and computer science, led to the Internet innovation; at the same time, the message also extremely fast rate of flow, and produce large amounts of data. Therefore creating data mining,
Due to the rapid development of semiconductor technology and computer science, led to the Internet innovation; at the same time, the message also extremely fast rate of flow, and produce large amounts of data. Therefore creating data mining,
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/yg83rs
Autor:
Tso-Yu Wu, Jeng-Rern Yang
Publikováno v:
2015 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK).
A 2.6 GHz cascode CMOS power amplifier with the derivative superposition (DS) method and the second harmonic control for LTE application is fabricated in TSMC 1P6M 0.18 µm standard CMOS process. The DS method uses two transistors connected in parall
Publikováno v:
Japanese Journal of Applied Physics. 42:375-383
We report the structural, electrical and optical properties of bulk InAsN alloy with various nitrogen contents deposited on (100) InP substrates using plasma-assisted gas-source molecular beam epitaxy. From absorption measurements, it is found that t
Publikováno v:
2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).
A fully integrated 1.8 GHz CMOS power amplifier is presented in this paper. The proposed power amplifier consists of a three-stage cascade structure comprising a driver stage, a pre-distortion stage, and a power stage. The pre-distortion stage involv
Publikováno v:
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307).
We report the absorption and photoluminescence (PL) properties of InAsN alloys grown by gas source molecular beam epitaxy. A calculation based on the band anticrossing model was used to evaluate the Burstein-Moss effect and the band renormalization e
Publikováno v:
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198).
The growth of InAsN alloys with various nitrogen contents on [100] InP substrates by using plasma-assisted gas source molecular beam epitaxy is reported. The structural, electrical and optical properties of the alloy film are also investigated by usi
Publikováno v:
Dementia and geriatric cognitive disorders. 13(1)
Background: Reports on the frequency of major depression in Alzheimer’s disease are conflicting, some suggesting that it is frequent, others suggesting that it is uncommon. Methods: We examined the prevalence and incidence of symptom clusters meeti