Zobrazeno 1 - 10
of 189
pro vyhledávání: '"Tsibizov, A."'
Inter-terminal capacitances (ITCs) have major influence on the dynamic performance of power SiC MOSFETs. Knowledge of the exact values for the ITCs is required in order to perform accurate and predictive compact model simulations of their dynamic per
Externí odkaz:
http://arxiv.org/abs/2107.10408
Akademický článek
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Autor:
Martinella, C., Natzke, P., Alia, R.G., Kadi, Y., Niskanen, K., Rossi, M., Jaatinen, J., Kettunen, H., Tsibizov, A., Grossner, U., Javanainen, A.
Publikováno v:
In Microelectronics Reliability January 2022 128
Publikováno v:
Вестник Научно-исследовательского института железнодорожного транспорта, Vol 80, Iss 6, Pp 343-350 (2021)
The article discusses technical solutions for the creation of an effective design of a brake system for high-speed longwheelbase platforms intended for the transport of containers, as well as for the development of a fundamentally new brake equipment
Externí odkaz:
https://doaj.org/article/390159f3afee4e3384a6eaba1a730f5b
Autor:
Shnaider, Svetlana V., Zhilich, Snezhana V., Fedorchenko, Alexander Yu., Rendu, William, Parkhomchuk, Ekaterina V., Alisher kyzy, Saltanat, Olenchenko, Vladimir V., Tsibizov, Leonid V., Serdyuk, Natalia V., Zelenkov, Nikita V., Chargynov, Temirlan, Krivoshapkin, Andrey I.
Publikováno v:
Stratum plus. Археология и культурная антропология / Stratum plus. Archaeology and Cultural Anthropology. (2):319-337
Externí odkaz:
https://www.ceeol.com/search/article-detail?id=947464
Autor:
Nataliya Yurkevich, Polina Osipova, Leonid Tsibizov, Ekaterina Tsibizova, Irina Fadeeva, Sergey Volynkin, Kristina Tulisova, Tatyana Kuleshova
Publikováno v:
Applied Sciences, Vol 12, Iss 20, p 10610 (2022)
The article presents the original results of the investigation of sulfide-bearing mine tailings dumps (Ursk, Western Siberia, Russia), the adjacent territory, and acid mine drainage flows. The novelty of this study is related to integration of geophy
Externí odkaz:
https://doaj.org/article/5335be64ad984578ae0db83b41373575
Publikováno v:
IEEE Transactions on Electron Devices. 70:2153-2156
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19325f4895c614cdad2938f0e2ca92d3
https://doi.org/10.1109/ted.2023.3245998
https://doi.org/10.1109/ted.2023.3245998
Publikováno v:
Phys. Rev. B 65, 165328 (2002)
The envelope-function method with generalized boundary conditions is applied to the description of localized and resonant interface states. A complete set of phenomenological conditions which restrict the form of connection rules for envelope functio
Externí odkaz:
http://arxiv.org/abs/cond-mat/0110505
Akademický článek
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Autor:
Christian Dorfer, Marianne E. Bathen, Salvatore Race, Piyush Kumar, Alexander Tsibizov, Judith Woerle, Ulrike Grossner
Publikováno v:
Applied Physics Letters, 122 (18)
We demonstrate that the multi-photon absorption edge transient-current technique (edge-TCT) can be used to three-dimensionally map the impact of defect distributions on device characteristics in situ inside the bulk of silicon carbide devices. A ∼5
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1bc1e6eb6749591f776e4518228430bf
https://hdl.handle.net/20.500.11850/612920
https://hdl.handle.net/20.500.11850/612920