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Autor:
Caleb Yu-Sheng Cho, Prateep Tuntasood, Tseng-Yi Liu, Ming-Jer Chen, Chiou-Feng Chen, Der-Tsyr Fan
Publikováno v:
IEEE Transactions on Electron Devices. 53:465-473
A self-aligned sidewall split-gate Flash memory cell is fabricated with overerase immunity. Particularly, the sidewall corner of the floating-gate is deliberately rounded to release the electric field lines encountered in the poly-to-poly erase. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d39261214e938732a5eb5b0954cf979
https://doi.org/10.1109/ted.2005.863764
https://doi.org/10.1109/ted.2005.863764
