Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Tseng-Fu Lu"'
Autor:
Chao-Sung Lai, Dorota G. Pijanowska, Tseng-Fu Lu, Chia-Ming Yang, Cheng-En Lue, Chi-Hsien Huang, Yi-Ting Lin, I.-Shun Wang, Mu-Yi Hua
Publikováno v:
Sensors and Actuators B: Chemical. 187:274-279
In this study, the ammoniated indium tin oxide (ITO) films prepared by different condition of NH 3 plasma treatment on flexible polyethylene terephthalate substrates are proposed as sensing electrodes of extended-gate field-effect transistors (EGFETs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::adc10d0f5df271da5aaeae905a39c2dc
https://doi.org/10.1016/j.snb.2012.11.023
https://doi.org/10.1016/j.snb.2012.11.023
Autor:
Dorota G. Pijanowska, Chi-Hang Chin, Tseng-Fu Lu, Chia-Ming Yang, Jung-Hsiang Yang, Jer-Chyi Wang, Cheng-En Lue, Chao-Sung Lai
Publikováno v:
Sensors and Actuators B: Chemical. 180:71-76
In this article, the detection of ammonium (NH4+) ion using nanoscaled 2-nm thick atomic layer deposition (ALD)-hafnium oxide (HfO2) films with post rapid thermal annealing (RTA) and carbon tetrafluoride (CF4) plasma treatments based on light-address
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eecce8df5b330d1201cf0c783b165a10
https://doi.org/10.1016/j.snb.2012.03.025
https://doi.org/10.1016/j.snb.2012.03.025
Autor:
Chao-Sung Lai, Jer-Chyi Wang, Chi-Fong Ai, Chia-Ming Yang, Kuan-I Ho, Tseng-Fu Lu, Chung-Po Chang
Publikováno v:
Microelectronics Reliability. 50:742-746
A novel HfO 2 thin film with SF 6 plasma treatment as ion selective membrane on electrolyte–insulator–semiconductor structure for pH-sensor was proposed. The sensing characteristics on hydrogen ion detection and the non-ideal effects including dr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8d360d19df34d5fac5a6e4e30797a03
https://doi.org/10.1016/j.microrel.2010.01.029
https://doi.org/10.1016/j.microrel.2010.01.029
Autor:
Chia-Ming Yang, Dorota G. Pijanowska, B. Jaroszewicz, Tseng-Fu Lu, Yen-Chih Lin, Chao-Sung Lai
Publikováno v:
Sensors and Actuators B: Chemical. 143:494-499
In this study, the hafnium oxide (HfO2) thin film deposited by using radio frequency (r.f.) sputter was used as the sensing membrane of ion sensitive field-effect transistor (ISFET) for pH detection. For low cost and easy fabrication, the single HfO2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e14f50d1e97ff53959dc0847e77624d2
https://doi.org/10.1016/j.snb.2009.09.037
https://doi.org/10.1016/j.snb.2009.09.037
Publikováno v:
Japanese Journal of Applied Physics. 45:3807-3810
Hafnium oxide (HfO2) was directly deposited on silicon as a sensing dielectric by RF sputtering. This combination was proposed to replace the HfO2/SiO2 stacked structure. The characterizations of HfO2 sensing dielectrics of various thicknesses were w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdd0ba80803196f6a1ae421567258cce
https://doi.org/10.1143/jjap.45.3807
https://doi.org/10.1143/jjap.45.3807
Autor:
Dorota G. Pijanowska, Michal Zaborowski, Jer-Chyi Wang, Tseng-Fu Lu, Kuan-I Ho, Chao-Sung Lai, Bohdan Jaroszewicz, Chia-Ming Yang
Publikováno v:
Proceedings IMCS 2012.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30cd934a24ce7d04aff4ff07220e707a
https://doi.org/10.5162/imcs2012/3.5.2
https://doi.org/10.5162/imcs2012/3.5.2
Autor:
Chao-Sung Lai, Chi-Hsien Huang, Tseng-Fu Lu, Cheng-En Lue, I-Shun Wang, Chia-Ming Yang, Yi-Ting Lin, Dorota G. Pijanswska
Publikováno v:
Proceedings IMCS 2012.
In this study, indium tin oxide (ITO) layers were deposited on polyethylene terephthalate (PET) substrates (ITO/PET) as a sensing membrane. In order to generate the amine groups on the surface for urease immobilization, NH3 plasma was used with RF po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b66e7d1b46d96fbb59bc48406df6e862
https://doi.org/10.5162/imcs2012/1.2.1
https://doi.org/10.5162/imcs2012/1.2.1
Publikováno v:
ASICON
Electrolyte-insulator-semiconductor (EIS) devices with programmable Sm 2 O 3 /Si 3 N 4 /SiO 2 and HfO 2 /gadolinium oxide nanocrystals (Gd 2 O 3 -NCs)/SiO 2 structures are demonstrated for pH detection. The proposed programmable EIS sensors with mult
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2bfb43391808a49d1efa7e010c9b0b2d
https://doi.org/10.1109/asicon.2011.6157238
https://doi.org/10.1109/asicon.2011.6157238
Autor:
Kuan-I Ho, Dorota G. Pijanswska, Chao-Sung Lai, Tseng-Fu Lu, Jer-Chyi Wang, Meng-Cin Su, Chia-Ming Yang
Publikováno v:
2011 16th International Solid-State Sensors, Actuators and Microsystems Conference.
In this article, the development of a potassium ion sensor based on the fluorinated-HfO 2 using fluorine (F19+) ion implantation on Electrolyte-Insulator-Semiconductor (EIS) structure is proposed. To concentrate the F atom within a shallow region on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72fcabc7a5cfd793bbac56cd7d65d387
https://doi.org/10.1109/transducers.2011.5969280
https://doi.org/10.1109/transducers.2011.5969280
Autor:
Jer-Chyi Wang, Dorota G. Pijanswska, Cheng-En Lue, Jung-Hsiang Yang, Chao-Sung Lai, Chia-Ming Yang, Tseng-Fu Lu, Chi-Hang Chin
Publikováno v:
2011 16th International Solid-State Sensors, Actuators and Microsystems Conference.
In this work, discussing the detection of NH 4 + ion based on LAPS with functionalized 2 nm-thick ALD-HfO 2 film using RTA and CF 4 plasma is demonstrated. The annealing treatment at 500, 700, and 900°C were performed on ALD-HfO 2 film and the plasm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f684367950efa62865094ac7e25cb0e9
https://doi.org/10.1109/transducers.2011.5969270
https://doi.org/10.1109/transducers.2011.5969270